Patent application number | Description | Published |
20140239301 | High Performance Surface Illuminating GeSi Photodiodes - A GeSi avalanche photodiode (APD includes an anti-reflection structure, a Ge absorption region, and a resonance cavity enhanced (RCE) reflector. The anti-reflection structure includes one or more dielectric layers and a top contact layer which is heavily doped with dopants of a first polarity. The RCE reflector includes: an intrinsic or lightly doped Si multiplication layer, a Si contact layer which is heavily doped with dopants of a second polarity opposite the first polarity, a Si cavity length compensation layer, a buried oxide (BOX) layer, and a Si substrate. | 08-28-2014 |
20140291682 | High Performance GeSi Avalanche Photodiode Operating Beyond Ge Bandgap Limits - Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge absorption layer; a first silicon dioxide (SiO | 10-02-2014 |
20150028386 | Ge-Si P-I-N Photodiode With Reduced Dark Current And Fabrication Method Thereof - Various embodiments of a germanium-on-silicon (Ge—Si) photodiode are provided along with the fabrication method thereof. In one aspect, a Ge—Si photodiode includes a doped bottom region at the bottom of a germanium layer, formed by thermal diffusion of donors implanted into a silicon layer. The Ge—Si photodiode further includes a doped sidewall region of Ge mesa formed by ion implantation. Thus, the electric field is distributed in the intrinsic region of the Ge—Si photodiode where there is low dislocation density. The doped bottom region and sidewall region of the Ge layer prevent electric field from penetrating into the Ge—Si interface and Ge mesa sidewall region, where a large amount of dislocations are distributed. This design significantly suppresses dark current. | 01-29-2015 |
20150028443 | A Ge-Si Avalanche Photodiode With Silicon Buffer Layer And Edge Electric Field Buffer Region - Various embodiments of a germanium-on-silicon (Ge—Si) avalanche photodiode are provided. In one aspect, the Ge—Si avalanche photodiode utilizes a silicon buffer layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode. In another aspect, the Ge—Si avalanche photodiode utilizes an edge electric field buffer layer region to reduce the electric field along the sidewall of multiplication layer, where high electric field is applied for avalanche, thereby reducing probability of sidewall breakdown and enhancing reliability of the avalanche photodiode. | 01-29-2015 |
20150243800 | Ge/Si Avalanche Photodiode With Integrated Heater And Fabrication Thereof - Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level. | 08-27-2015 |
20150338577 | Polarization Rotator-Splitter/Combiner Based On Silicon Rib-Type Waveguides - Various embodiments of an integrated polarization rotator-splitter/combiner apparatus are described. An integrated polarization rotator-splitter apparatus may include an input waveguide section, a polarization rotator section, a polarization splitter section and an outgoing waveguide section, which can also be reversely connected as a polarization rotator-combiner. | 11-26-2015 |
20150378185 | Silicon-Based Rib-Waveguide Modulator And Fabrication Method Thereof - Various structures of an electro-optic device and fabrication methods thereof are described. A fabrication method is provided to fabricate an electro-optic device which may include a silicon-based rib-waveguide modulator which includes a first top silicon layer, having a first doped region that is at least partially doped with dopants of a first conducting type, a second top silicon layer, having a second doped region that is at least partially doped with dopants of a second conducting type, and a thin dielectric gate layer disposed between the first top silicon layer and the second top silicon layer. The second doped region may be at least in part directly over the first doped region. The modulator may also include a rib waveguide formed on the second top silicon layer, a first electric contact formed on the first top silicon layer, and a second electric contact formed on the second top silicon layer. | 12-31-2015 |
20160025932 | Integrated Lens-Array-On-Substrate For Optical Coupling System And Fabrication Method Thereof - An integrated optical coupling device may include a substrate, a coating layer disposed on the substrate, and a prism disposed on the coating layer. The prism may include a first surface and a second surface. The integrated optical coupling device may also include a first lens disposed on the first surface of the prism, a second lens disposed on the second surface of the prism, and an anti-reflection coating layer disposed on the first lens and the second lens. | 01-28-2016 |
20160041340 | Optical Coupler Having Anchored Cantilever Structure With Multi-Stage Inverse Taper Core Waveguide And Fabrication Method Thereof - An optical coupler structure may include a substrate, a waveguide section and an anchored cantilever section. The substrate may include a main body and a sub-pillar structure formed on the main body. The waveguide section may be disposed on the substrate, and may include a core waveguide of a first material surrounded by a cladding layer of a second material. The anchored cantilever section may be disposed on the sub-pillar structure on the substrate, which may be configured to support the cantilever section and separate the cantilever section from the main body of the substrate. The anchored cantilever section may include a multi-stage inverse taper core waveguide and a cladding layer, of the second material, which surrounds the multi-stage inverse taper core waveguide. | 02-11-2016 |
Patent application number | Description | Published |
20140091280 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE - Embodiments of the present invention provide an array substrate, a manufacturing method thereof and a display device. The manufacturing method of an array substrate, comprising: forming a gate electrode on a base substrate by a first patterning process, and then depositing a gate insulating layer on the base substrate on which the gate electrode is formed; forming source and drain electrodes on the base substrate obtained after the above step, by a second patterning process; forming an active layer formed of a graphene layer, and a protective layer disposed on the active layer, on the base substrate obtained after the above steps, by a third patterning process; and forming a planarizing layer on the base substrate, obtained after the above steps, by a fourth patterning process, in which the planarizing layer is provided with a through hole through which the source or drain electrode is exposed. | 04-03-2014 |
20140091305 | Polysilicon Thin Film And Manufacturing Method Thereof, Array Substrate And Display Device - A polysilicon thin film and a manufacturing method thereof, an array substrate and a display device are disclosed. The manufacturing method of the polysilicon thin film comprises the following steps: forming a graphene layer and an amorphous silicon layer which are adjacent; forming polysilicon by way of crystallizing amorphous silicon so as to obtain the polysilicon thin film. The polysilicon thin film manufactured by the method possesses good characteristics. | 04-03-2014 |
20150084842 | PIXEL CIRCUIT, DRIVING METHOD FOR THE SAME, AND DISPLAY DEVICE - The present disclosure relates to the art of display manufacture. There are provided a pixel circuit, a driving method for the same and a display device. The pixel circuit comprises a light-emitting device and a driving transistor connected in series between a first voltage signal terminal and a second voltage signal terminal, and the pixel circuit further comprises a light-emitting control module and a compensation module; the light-emitting control module has an input terminal connected to a first control signal, an output terminal connected to the source and the drain of the driving transistor, and the light-emitting module is configured to control the state of the driving transistor in response to the first control signal so that the light-emitting device emits light or is turned off; the compensation module has an input terminal connected to a second control signal, and an output terminal connected to the gate and the source of the driving transistor, and to the light-emitting control module, and the compensation module is configured to disconnect or connect the gate and the source of the driving transistor in response to the second control signal, so that the voltage at the gate of the driving transistor compensates for the threshold voltage of the driving transistor when the light-emitting device emits light. The issue of the poor uniformity of the light-emitting diode in luminance can be addressed by the above technical solutions. | 03-26-2015 |
20150179672 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE, AND ELECTRONIC APPARATUS - A thin film transistor and a method for manufacturing the same, an array substrate including the thin film transistor, and an electronic apparatus including the thin film transistor or provided with the array substrate. The thin film transistor includes: a gate electrode, a gate insulating layer, an active layer, and a source electrode and a drain electrode, the active layer is formed of a mixture including a semiconductor nano-material and a photoresist material. The method for manufacturing the thin film transistor includes: preparing a mixture including a semiconductor nano-material and a photoresist material; applying the mixture over a substrate, and forming a patterned active layer by exposure and development. | 06-25-2015 |
20150270406 | METHOD FOR PREPARING GRAPHENE, THIN-FILM TRANSISTOR, ARRAY SUBSTRATE, AND DISPLAY PANEL - This present invention discloses a method for preparing graphene, a thin-film transistor, an array substrate, and a display panel. Above all, an amorphous carbon thin film and a catalyst metal thin film are formed on a base substrate in this order. Then, the catalyst metal thin film and the amorphous carbon thin film are allowed to form a eutectic at a high temperature caused by an excimer laser in a manner of excimer laser irradiation. When the irradiation is finished, the surface temperature of the catalyst metal thin film is drastically decreased, allowing most of carbon atoms of the amorphous carbon thin film to be locked in the catalyst metal thin film and only a small amount of carbon atoms to be precipitated on the lower surface of the catalyst metal thin film, so that a graphene thin film is formed. Since the above described the method employs excimer laser irradiation to grow a graphene thin film, and the excimer laser has minor effect on other film layers located under the graphene thin film, graphene can be formed on the base substrate without a transfer process. Therefore, damage and contamination of graphene thin film caused by the transfer process are prevented and properties of graphene thin film are ensured. | 09-24-2015 |
20150279273 | PIXEL CIRCUIT, DISPLAY SUBSTRATE AND DISPLAY DEVICE - The present invention provides a pixel circuit, a display substrate and a display device. The pixel circuit comprises a control section, a light emitting diode, a high-level input terminal, a low-level input terminal and a reference terminal, in which the control section comprises a driving thin film transistor, at least one capacitors and a plurality of switching thin film transistors. The reference terminal is connected with the low-level input terminal so as to discharge a capacitor which is connected with a gate of the driving thin film transistor in a pixel resetting stage of the pixel circuit. | 10-01-2015 |
20150280008 | MULTI-GATE THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE - The present invention discloses a multi-gate thin film transistor for realizing a multi-gate occupying a small area, pixels provided with the multi-gate TFTs are high in aperture ratio, and a display device provided with the multi-gate TFTs is high in resolution. The multi-gate thin film transistor comprises: at least three gate electrodes; a plurality of active layers corresponding to each of the gate electrodes, respectively, the active layers being formed into an integrated structure; a source electrode connected with one of the plurality of active layers; and a plurality of drain electrodes connected with each of the remainder of the plurality of active layers, respectively. The present invention further discloses an array substrate comprising the multi-gate thin film transistor, and a display device. | 10-01-2015 |
20150302817 | DISPLAY DRIVE SIGNAL COMPENSATING METHOD, DISPLAY DRIVE SIGNAL COMPENSATING DEVICE FOR CARRYING OUT SUCH METHOD, AND DISPLAY COMPRISING SUCH DEVICE - The present invention relates to liquid crystal display manufacturing technology. There provides a display drive signal compensating method, comprising the steps of: acquiring an original drive signal of every row of input pixels in a display; determining a position of the row of input pixels, based on the original drive signal; generating a compensation signal for compensating the original drive signal, based on a transmission line internal resistance at the position of the row of input pixels; and outputting a superposed signal obtained by superposing the compensation signal on the original drive signal to the row of input pixels. This method can compensates a voltage drop of the drive signal resulted by the transmission line internal resistance and thus improves the display effect. Meanwhile, there also provide a display drive signal compensating device for carrying out the abovementioned method, and correspondingly, a display comprising such device. | 10-22-2015 |
20160078807 | DISPLAY PANEL, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND DISPLAY DEVICE - This disclosure relates to a display panel, an organic light emitting diode display and a display device comprising the display panel. The display panel according to one aspect of this disclosure comprises a plurality of pixels each comprising a first sub-pixel, a second sub-pixel and a third sub-pixel, wherein the first sub-pixel and the second sub-pixel are arranged in the row direction, the first sub-pixel in each pixel is adjacent to the first sub-pixel in a pixel adjacent in the row direction, the second sub-pixel in each pixel is adjacent to the second sub-pixel in another pixel adjacent in the row direction, the geometrical center of the third sub-pixel in each pixel is distributed uniformly on the display panel. By means of the display panel of this disclosure, the area of the light emitting area in the pixel can be increased, the aperture ratio can be improved, so as to realize high display quality. | 03-17-2016 |