Tuji
Eiichirou Tuji, Aichi-Ken JP
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20140374563 | POWER SLIDING APPARATUS OF CONVEYANCE SEAT - In right and left upper rails in a power sliding apparatus of a conveyance seat, openings to receive gear boxes are formed, respectively. The gear boxes are attached to the right and left upper rails via the openings, respectively. The opening in one of the right and left upper rails is closed with a motor fixing bracket to fix a motor unit. | 12-25-2014 |
Hiroshi Tuji, Tokyo JP
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20140333274 | COMPLEX POWER MANAGEMENT DEVICE AND COMMUNICATION DEVICE - A complex power management device includes DC/DC converters and a common reference line connected in common to the DC/DC converters. Each of the DC/DC converters includes a first switch element and inductor connected in series between first and second nodes, a second switch element, one end of which is connected to a third node that is a connection point of the first switch element and the inductor and the other end of which is connected to the corresponding ground terminal, and an output voltage adjustment circuit, which exclusively controls an ON/OFF state of the first and second switch elements based on a voltage of a fourth node that is the other end of the second switch element. The common reference line is connected to a fifth node that is provided on a wire connecting the second switch element of each of the DC/DC converters to the ground terminal. | 11-13-2014 |
Hiroyasu Tuji, Osaka JP
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20080304941 | Multi-Stage Baking Apparatus for Plasma Display Panel - The present invention intends to provide a baking apparatus for PDP capable of realizing an improvement in productivity while minimizing an increase in a factory space. In a baking furnace | 12-11-2008 |
Takahiro Tuji, Atsugi JP
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20100181985 | Regulator Circuit and RFID Tag Including the Same - One object of the present invention is to provide a regulator circuit with an improved noise margin. In a regulator circuit including a bias circuit generating a reference voltage on the basis of the potential difference between a first power supply terminal and a second power supply terminal, and a voltage regulator outputting a potential to an output terminal on the basis of a reference potential input from the bias circuit, a bypass capacitor is provided between a power supply terminal and a node to which a gate of a transistor included in the bias circuit is connected. | 07-22-2010 |
20110059575 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured. | 03-10-2011 |
20110063803 | Semiconductor Device - The problem of damage on an antenna or a circuit (electrostatic breakdown) due to discharge of electric charge accumulated in an insulator is solved; and the problem of NAKANUKE failure is solved. A pair of conductive layers, a pair of insulators provided between the pair of conductive layers, and a chip which is provided between the pair of insulators and includes an antenna, an analog circuit, and a digital circuit are provided, in which an opening is provided for at least one of the pair of conductive layers, and the opening is provided at a position which overlaps at least the analog circuit. | 03-17-2011 |
20120289008 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured. | 11-15-2012 |
20130280857 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured. | 10-24-2013 |
Yohji Tuji, Tokyo JP
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20090114360 | APPARATUS FOR TREATING PAPERMAKING FEEDSTOCK - A papermaking raw material processor capable of reforming pulp in papermaking a process using cavitation includes a first pump | 05-07-2009 |
Yoshinori Tuji, Shizuoka-Ken JP
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20080241730 | PROCESS FOR PRODUCING TONER PARTICLES - In a process for producing toner particles through granulation by a wet process, a process for producing toner particles is provided that enables reduction of water content in wet toner particle cakes obtained by separating toner particles from a toner particle dispersion in a good efficiency, followed by washing, and enables efficient wash-away of impurities remaining on the toner particle surfaces so as to promise superior image characteristics. The toner particles are produced through a filtering step in which a slurry which contains toner particles is subjected to solid-liquid separation by means of a belt filter having a pressing aeration means which carries out aeration with pressing, to form wet toner particle cakes. | 10-02-2008 |
Yuki Tuji, Kanagawa JP
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20130010145 | SOLID-STATE IMAGE SENSING APPARATUS AND ELECTRONIC APPARATUS - A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers. | 01-10-2013 |
20140218573 | SOLID-STATE IMAGE SENSING APPARATUS AND ELECTRONIC APPARATUS - A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers. | 08-07-2014 |