Patent application number | Description | Published |
20100100272 | SYSTEM AND METHOD FOR ROAD ANGLE ESTIMATION - A system and method for estimating road angles of a road on which a moving body is traveling are disclosed. The road angle estimation system includes: a sensing module adapted to be mounted on the moving body to detect a plurality of pieces of measurement information associated with the moving body; and a calculating module coupled to the sensing module to receive the pieces of measurement information therefrom. The calculating module simultaneously calculates an estimated bank angle and an estimated grade angle on the basis of the pieces of measurement information, a plurality of support parameters, and a plurality of user control parameters. | 04-22-2010 |
20110005315 | ANGLE-MEASURING METHOD AND ANGLE-MEASURING GYROSCOPE SYSTEM FOR IMPLEMENTING THE SAME - An angle-measuring method includes: configuring a state observer to calculate a set of estimated signals based on a set of previously calculated estimated parameters; configuring the state observer to calculate a gain thereof using a dynamic equation associated with a gyroscope; configuring the state observer to calculate a set of currently calculated estimated parameters using the dynamic equation associated with the gyroscope based on the gain calculated by the state observer, a set of sensing signals generated by a sensing module, and the estimated signals calculated by the state observer; and configuring an angle calculator to calculate an angle of rotation of the gyroscope based on a position and a velocity in the currently calculated estimated parameters calculated by the state observer and a stiffness coefficient of the gyroscope. An angle-measuring gyroscope system that implements the angle-measuring method is also disclosed. | 01-13-2011 |
20110259100 | MEMS GYROSCOPE - An MEMS gyroscope is disclosed, capable of computing the rotating angle of a DUT being attached thereto without the need to execute an off-line calibration process, of precluding the execution of an integration process, and of executing an on-line compensation process for the error introduced by the sensing circuit defect and by the mechanical structure defect of its gyroscope module. The disclosed MEMS gyroscope comprises: a gyroscope module, a sensing module coupled with the gyroscope module, and a control module couple with the gyroscope module and the sensing module, respectively. The control module receives the system dynamic of the gyroscope module sensed by the sensing module, and applies a gyroscope control method for controlling the gyroscope module and computing the rotating angle of the DUT. Moreover, the control module outputs a control signal including two extra frequency signals, to the gyroscope module, for driving the gyroscope module into operation. | 10-27-2011 |
20110314910 | Single-axis-control-input gyroscope system having imperfection compensation - The present invention proposes a single-axis-control-input gyroscope system having imperfection compensation, which comprises a gyroscope and a state observer. The gyroscope includes a mechanical structure, and the dynamic behavior of the mechanical structure is described with a plurality of system parameters and a plurality of dynamic equations. The system parameters include a mass of the gyroscope, two main-axis spring constants, a cross-axis spring constant, two main-axis damping coefficients, a cross-axis damping coefficient and an angular velocity. The mechanical imperfections cause the system parameters to deviate from the designed values and become unknown values. The gyroscope receives a single-axis control signal and outputs a plurality of gyroscopic system dynamics. The single-axis control signal includes at least two frequency signals. The state observer is coupled to the gyroscope to receive the gyroscopic system dynamics as the inputs thereof to feed back compensations to the state observer. Thereby is estimated an angular velocity. | 12-29-2011 |
20130161708 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate, a die and a medium. The substrate has an upper substrate surface. The substrate has a trench extended downward from the upper substrate surface. The trench has a side trench surface. The die is in the trench. The die has a lower die surface and a side die surface. The lower die surface is below the upper substrate surface. A part of the trench between the side trench surface and the side die surface is filled with the medium. | 06-27-2013 |
20130241601 | High-side driver circuit - The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source. | 09-19-2013 |
20130241603 | Current limit circuit apparatus - The present invention provides a current limit circuit apparatus, coupled with the gate of a GaN transistor. The current limit circuit comprises a diode, a first transistor, a second transistor, a first resistor, a second resistor, a third resistor and a fourth resistor. The source and the drain of the first transistor couple with the diode. The source of the second transistor couples with the gate of the first transistor. The source of the first transistor couples with the first transistor. The source of the second transistor couples with the second resistor. The third resistor couples with the fourth resistor and the gate of the first transistor. The first transistor turned off and the gate current is limited. When the current of the gate of the GaN transistor exceeds the predetermined value, the breakdown voltage is increased by limiting the gate current. | 09-19-2013 |
20140178781 | FUEL CELL SYSTEM AND METHOD OF HEAT RECOVERY THEREOF - The present invention provides a fuel cell system, and the fuel cell system comprises a fuel cell, an after burner, a heat exchanger and a reformer. The after burner connects with the fuel cell to receive rest-bar of the fuel cell and produce a gas with high temperature. The heat exchanger comprises a first heat exchanging unit and a second heat exchanging unit connected with the first heat exchanging unit, and the second heat exchanging unit connects with a fuel input pipe for receiving the fuel. The reformer connects with the after burner, the first heat exchanging unit and the second heat exchanging unit separately. | 06-26-2014 |