Tsung-Hsueh
Tsung-Hsueh Lee, Taoyuan County TW
Patent application number | Description | Published |
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20130278417 | PORTABLE ELECTRICAL APPARATUS AND METHOD FOR DETECTING STATE OF THE SAME - A portable electrical apparatus includes a sensor, a micro-controller, and a wireless positioning module. The sensor is configured for sensing a movement of the portable electrical apparatus to generate a sensing signal. The micro-controller is configured for receiving the sensing signal and comparing a threshold value with a sensing value corresponding to the sensing signal. The wireless positioning module is configured for positioning the portable electrical apparatus to generate a plurality of position data corresponding to a location of the portable electrical apparatus. When the sensing value is greater than the threshold value, the micro-controller loads the position data generated within a predetermined period, which is right after the sensing value being greater than the threshold value, compares the loaded position data with each other, and an alarm signal is sent out according to a comparison result. | 10-24-2013 |
Tsung-Hsueh Wu, Kuei Shan Hsiang TW
Patent application number | Description | Published |
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20150192965 | ELECTRONIC DEVICE - An electronic device is provided, including a housing, a circuit board, a fixed member, a curved groove formed on the fixed member, a slider, and a supporting member. The circuit board is disposed in the housing. The fixed member is fixed to the housing. The slider is movably disposed in the groove, and the supporting member is connected to the slider. When the slider moves from a first position to a second position in the groove, the slider protrudes from the housing for supporting the housing, and an angle is formed between the supporting member and the housing. | 07-09-2015 |
Tsung-Hsueh Yang, Taichung City TW
Patent application number | Description | Published |
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20140264553 | METHOD OF FABRICATING MONOS SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is provided. The method includes forming a plurality of gate structures having asymmetric sidewalls including a tall side and a short side. Adjacent ones of the plurality of gate structures are separated by a tall side-tall side region and a short side-short side region. The method further comprises forming a spacer layer over the plurality of gate structures and a bottom surface of the tall side-tall side region and the short side-short side region, depositing an oxide layer over the spacer layer, etching the bottom surface portions of the oxide layer, and selectively etching the sidewall portions of the oxide layer in the tall side-tall side region. | 09-18-2014 |