Patent application number | Description | Published |
20110042714 | POWER SEMICONDUCTOR DEVICE - According to one embodiment, a power semiconductor device includes an IGBT region, first and second electrodes, and a first-conductivity-type second semiconductor layer. The region functions as an IGBT element. The first electrode is formed in a surface of a second-conductivity-type collector layer opposite to a first-conductivity-type first semiconductor layer in the region. The second electrode is connected onto a first-conductivity-type emitter layer and a second-conductivity-type base layer in a surface of the first-conductivity-type base layer and insulated from a gate electrode in the region. The first-conductivity-type second semiconductor layer extends from the surface of the first-conductivity-type base layer to the first-conductivity-type first semiconductor layer around the IGBT region, and connected to the first electrode. | 02-24-2011 |
20120061724 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first major electrode, a first semiconductor layer, a first conductivity-type base layer, a second conductivity-type base layer, a second semiconductor layer, a buried layer, a buried electrode, a gate insulating film, a gate electrode, and a second major electrode. The buried layer of the second conductivity type selectively is provided in the first conductivity-type base layer. The buried electrode is provided in a bottom portion of a trench which penetrates the second conductivity-type base layer to reach the buried layer. The buried electrode is in contact with the buried layer. The gate electrode is provided inside the gate insulating film in the trench. The second major electrode is provided on the second semiconductor layer and is electrically connected to the second semiconductor layer and the buried electrode. | 03-15-2012 |
20120074459 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first major electrode, a first semiconductor layer, a first conductivity type base layer, a second conductivity type base layer, a first conductivity type second semiconductor layer, a gate insulating film, a gate electrode, and a second major electrode. The gate insulating film is provided on a side wall of a trench penetrating the second conductivity type base layer to reach the first conductivity type base layer. The gate electrode is provided inside the gate insulating film in the trench. The second major electrode is provided on the second semiconductor layer and electrically connected with the second semiconductor layer. A maximum impurity concentration in the second semiconductor layer is within ten times a maximum impurity concentration in the second conductivity type base layer. | 03-29-2012 |
20130082302 | SEMICONDUCTOR DEVICE - A semiconductor device comprises: a substrate having a first and second surface; trenches provided on the second surface; a gate electrode provided in each trench; a first-conductive-type emitter layer provided on the second surface and contacting with the trenches; and an emitter electrode provided on the second surface to extend in a longitudinal direction of the trenches, the emitter electrode having a non-contact portion partially provided in the first-conductive-type emitter layer. | 04-04-2013 |
20130221401 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first electrode, a first conductivity type cathode layer, a first conductivity type base layer, a second conductivity type anode layer, a second conductivity type semiconductor layer, a first conductivity type semiconductor layer, an buried body, and a second electrode. The first conductivity type semiconductor layer is contiguous to the second conductivity type semiconductor layer in a first direction, and extends on a surface of the anode layer in a second direction that intersects perpendicularly to the first direction. The buried body includes a bottom portion and a sidewall portion. The bottom portion is in contact with the base layer. The sidewall portion is in contact with the base layer, the anode layer, the second conductivity type semiconductor layer and the first conductivity type semiconductor layer. The buried body extends in the first direction. | 08-29-2013 |
20130221402 | INSULATED GATE BIPOLAR TRANSISTOR - An insulated gate bipolar transistor includes a first semiconductor layer of a first conductivity type, a first base layer of a second conductivity type, a second base layer of the second conductivity type, a first emitter layer of the first conductivity type, and a second emitter layer of the first conductivity type. The first semiconductor layer has a first surface. A first trench and a second trench extend from the first surface into the first semiconductor layer. The first gate electrode is provided on the first semiconductor layer, on the first base layer, and on the first emitter layer via a first gate insulating film in the first trench. The second gate electrode is provided on the first semiconductor layer, on the second base layer, and on the second emitter layer via a second gate insulating film in the second trench. | 08-29-2013 |
20130248924 | SEMICONDUCTOR DEVICE - A semiconductor device includes a reverse-conducting insulated gate bipolar transistor (IGBT), wherein the thickness of the semiconductor layer underlying the diode region of the device is thinner than the thickness of the semiconductor layer underlying the IGBT portion of the device. In one aspect, the semiconductor layer is a continuous layer, and trenches defining the anodes in the diode region extend further inwardly of the semiconductor layer than does the base regions of the IGBT portion of the device. | 09-26-2013 |
20140061875 | SEMICONDUCTOR DEVICE - According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode and being in contact with the first electrode; a second semiconductor layer including a first part and a second part, and the second part being contact with the first electrode, and the second semiconductor layer having an effective impurity concentration lower than an effective impurity concentration in the first semiconductor layer; a third semiconductor layer provided between the second semiconductor layer and the second electrode, and having an effective impurity concentration lower than an effective impurity concentration in the second semiconductor layer; and a fourth semiconductor layer provided between the third semiconductor layer and the second electrode, and being in contact with the second electrode. | 03-06-2014 |
20140070266 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a pair of conductive bodies, a third semiconductor layer of the second conductivity type, and a fourth semiconductor layer of the first conductivity type. The second semiconductor layer is provided on the first semiconductor layer on the first surface side. The pair of conductive bodies are provided via an insulating film in a pair of first trenches extending across the second semiconductor layer from a surface of the second semiconductor layer to the first semiconductor layer. The third semiconductor layer is selectively formed on the surface of the second semiconductor layer between the pair of conductive bodies and has a higher second conductivity type impurity concentration in a surface of the third semiconductor layer than the second semiconductor layer. | 03-13-2014 |
20140084333 | POWER SEMICONDUCTOR DEVICE - In general, according to one embodiment, a power semiconductor device includes a first, a second, a third, a fourth, and a fifth electrode, and a first, a second, a third, and a fourth semiconductor layer. The first electrode includes a first and a second face. The first semiconductor layer is provided on a side of the first face of the first electrode. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The fourth semiconductor layer is provided on the third semiconductor layer. The second electrode is electrically connected to the fourth semiconductor layer. The third and fourth electrode are provided at the second semiconductor layer and the third semiconductor layer with an insulating film interposed. The fifth electrode is provided between the third electrode and the fourth electrode with an insulating film interposed. | 03-27-2014 |
20140124832 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode. | 05-08-2014 |
20140284658 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first and second electrode, a first, second, third and fourth semiconductor region, and a first intermediate metal film. The first region is provided above the first electrode and has a first impurity concentration. The second region is provided above the first region and has a second impurity concentration lower than the first impurity concentration. The third region is provided above the second region and has a third impurity concentration. The fourth region is provided above the second region and has a fourth impurity concentration lower than the third impurity concentration. The second electrode is provided above the third region and the fourth region and is in ohmic contact with the third region. The intermediate metal film is provided between the second electrode and the fourth region. The intermediate metal film forms Schottky junction with the fourth region. | 09-25-2014 |
20150021657 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes: first and second electrodes; a first semiconductor region being in ohmic contact with the first electrode; a second semiconductor region being in contact with the first semiconductor region and the first electrode, and the second semiconductor region having a lower impurity concentration than the first semiconductor region; a first semiconductor layer; a second semiconductor layer; a third semiconductor region; a fourth semiconductor region being in contact with the second electrode; and a third electrode in contact with the second semiconductor layer, the third semiconductor region, and the fourth semiconductor region via an insulating film. A peak of impurity concentration profile of the first semiconductor layer in a direction from the first electrode toward the second electrode is located between the first semiconductor region and the second semiconductor layer and located between the second semiconductor region and the second semiconductor layer. | 01-22-2015 |