Patent application number | Description | Published |
20080280451 | Plasma processing method and plasma processing apparatus - A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member. | 11-13-2008 |
20090000741 | Vacuum prcessing apparatus and vacuum processing method of sample - A vacuum processing apparatus includes a vacuum container which can be depressurized, a sample holder inside of the vacuum container for mounting a sample to be processed, wherein films laid over a surface of the sample are etched with plasma generated in a space above the sample holder. The apparatus further includes a gas supply channel for feeding a heat conducting gas between a sample mounting surface and the backside of the sample, and a pressure control unit for changing stepwise the pressure of the gas supply channel between the sample mounting surface and the backside of the sample in accordance with the progress of the processing of the films of the sample by the etching. | 01-01-2009 |
20090218316 | MANUFACTURING METHOD IN PLASMA PROCESSING APPARATUS - A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater. | 09-03-2009 |
20090321017 | Plasma Processing Apparatus and Plasma Processing Method - There is disclosed a plasma processing apparatus wherein a sample placed on the top surface of the sample table located within the processing chamber contained in a vacuum vessel is processed with plasma formed in the processing chamber, comprising a set of ducts cut within the sample table through which cooling medium flows; a film-shaped heater whose heating elements are concentrically embedded in the dielectric film serving as the top surface of the sample table; plural temperature controllers which set up the temperature of the cooling medium flowing through the ducts at different values, respectively; and a control unit which switches over the circulations through the ducts of the cooling medium supplied from the plural temperature controllers. | 12-31-2009 |
20120000774 | Plasma Processing Apparatus - A plasma processing apparatus includes a processing chamber to be depressurized and exhausted, a sample placement electrode provided in the processing chamber and having a sample placement surface on which a substrate to be processed is placed, an electromagnetic generation device to generate plasma in the processing chamber, a supply system that supplies processing gas to the processing chamber, a vacuum exhaust system that exhausts inside the processing chamber, a heater layer and a base temperature monitor that are disposed on the sample placement electrode, a wafer temperature estimating unit that estimates a wafer temperature from the base temperature monitor and plasma forming power supply, and a controller that regulates the heater corresponding to output from the temperature estimating unit. | 01-05-2012 |