Patent application number | Description | Published |
20090136826 | SOLID CATALYSTS AND FUEL CELL EMPLOYING THE SOLID CATALYSTS - A solid catalyst having a close-packed structure has basic structural units present in the surface of the solid catalyst, the basic structural units including (i) a triangular lattice constituted of atoms of platinum, ruthenium, and at least one additional element which are disposed at the vertexes in the triangular lattice so that each atom of one of the elements adjoins atoms of the other elements or (ii) a rhombic lattice constituted of atoms of platinum, ruthenium, and at least one additional element which are disposed at the vertexes in the rhombic lattice in an atomic ratio of 1:2:1 so that each ruthenium atom directly adjoins a platinum atom and an atom of the additional element; and a fuel cell includes either of the solid catalyst as an anode-side electrode catalyst. | 05-28-2009 |
20090137388 | SOLID CATALYSTS AND FUEL CELL EMPLOYING THE SOLID CATALYSTS - A solid catalyst has a close-packed structure and has a first surface layer and a second surface layer, wherein the first surface layer includes platinum as a main component and the second surface layer contains Pt | 05-28-2009 |
20100021104 | OPTICAL WAVEGUIDE SYSTEM - It is made possible to provide an optical waveguide system that has a coupling mechanism capable of selecting a wavelength and has the highest possible conversion efficiency, and that is capable of providing directivity in the light propagation direction. An optical waveguide system includes: a three-dimensional photonic crystalline structure including crystal pillars and having a hollow structure inside thereof; an optical waveguide in which a plurality of metal nanoparticles are dispersed in a dielectric material, the optical waveguide having an end portion inserted between the crystal pillars of the three-dimensional photonic crystalline structure, and containing semiconductor quantum dots that are located adjacent to the metal nanoparticles and emit near-field light when receiving excitation light, the metal nanoparticles exciting surface plasmon when receiving the near-field light; and an excitation light source that emits the excitation light for exciting the semiconductor quantum dots. | 01-28-2010 |
20100072420 | METHOD OF PRODUCING A METALLIC NANOPARTICLE INORGANIC COMPOSITE, METALLIC NANOPARTICLE INORGANIC COMPOSITE, AND PLASMON WAVEGUIDE - A method using a chemical synthesis method to produce a metallic nanoparticle inorganic composite having fine metallic nanoparticles that are uniformly dispersed at a high density in a solidified matrix, a metallic nanoparticle inorganic composite, and a plasmon waveguide using this composite are provided. Thus, a method including: preparing a precursor solution, applying the precursor solution onto a substrate, and then hydrolyzing the precursor solution to form an oxide film having fine pores, bringing the oxide film into contact with an acidic aqueous solution of tin chloride to chemically adsorb Sn | 03-25-2010 |
20100276649 | PROCESS FOR PRODUCING METALLIC-NANOPARTICLE INORGANIC COMPOSITE AND METALLIC-NANOPARTICLE INORGANIC COMPOSITE - A process for producing a metallic-nanoparticle inorganic composite | 11-04-2010 |
20120112171 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films. | 05-10-2012 |
20120228804 | NEAR-FIELD EXPOSURE MASK, RESIST PATTERN FORMING METHOD, DEVICE MANUFACTURING METHOD, NEAR-FIELD EXPOSURE METHOD, PATTERN FORMING METHOD, NEAR-FIELD OPTICAL LITHOGRAPHY MEMBER, AND NEAR-FIELD NANOIMPRINT METHOD - A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials. | 09-13-2012 |
20120241713 | ORGANIC MOLECULAR MEMORY - An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups. | 09-27-2012 |
20130234089 | ORGANIC MOLECULAR MEMORIES AND ORGANIC MOLECULES FOR ORGANIC MOLECULAR MEMORIES - An organic molecular memory of an embodiment includes: a first conductive layer; a second conductive layer; and an organic molecular layer that is provided between the first conductive layer and the second conductive layer, and contains an organic molecule selected from a group of molecules that simultaneously satisfy the following conditions (I) and (II) in a molecular system having a molecular frame with a π-electron system spreading along the molecular axis: (I) one of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) is delocalized along the molecular axis, and the other one is localized with respect to the molecular axis; and (II) the value of the energy level of the highest occupied molecular orbital (HOMO) is −5.75 eV or higher. | 09-12-2013 |
20130251306 | WAVEGUIDE AND INTEGRATED CIRCUIT - According to one embodiment, a waveguide includes: a substrate and a member. The member covers at least a part of the substrate and has a difference in the refractive index from the substrate not less than 2. A plurality of concave parts are provided on the substrate. The concave parts are arrayed on an upper face of the substrate. At least a part of a side face of each of the concave parts includes an arc. An inner diameter of each of the concave parts is not more than 50 nm. Intervals of the neighboring concave parts are not more than the inner diameter. The member fills the concave part. | 09-26-2013 |
20130260290 | NEAR-FIELD EXPOSURE MASK AND PATTERN FORMING METHOD - A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities. | 10-03-2013 |
20140008601 | ORGANIC MOLECULAR MEMORY - An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents. | 01-09-2014 |
20140061762 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film. | 03-06-2014 |
20140097485 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films. | 04-10-2014 |
20150044835 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films. | 02-12-2015 |
20150048438 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film. | 02-19-2015 |