Tsou, NY
Ching-Huei Tsou, Briarcliff Manor, NY US
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20150356270 | AUTOMATED MEDICAL PROBLEM LIST GENERATION FROM ELECTRONIC MEDICAL RECORD - Methods, systems, and devices map data of an electronic medical record to standardized medical concepts. The standardized medical concepts are defined by medical industry standards organizations. The methods, systems, and devices identify medical problem concepts, from the standardized medical concepts, generate feature values of the medical problem concepts based on features within the mapped standardized medical concepts, and weight the medical problem concepts based on the feature values according to a weighting function. These methods, systems, and devices identify medical problems as ones of the medical problem concepts that have a weighted score above a threshold, according to the weighting, and output a list of the medical problems. | 12-10-2015 |
Hwei-Ru Tsou, New City, NY US
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20080319011 | PROTEIN TYROSINE KINASE ENZYME INHIBITORS - This invention provides compounds of formula 1, having the structure | 12-25-2008 |
20090270363 | 2-Aryl- and 2-Heteroarylthiazolyl Compounds, Methods for Their Preparation and Use Thereof - The present invention discloses fused bicyclic 2-aryl- or 2-heteroarylthiazolyl compounds and their pharmaceutically acceptable salts and esters thereof, which are useful for inhibiting the growth of cancerous cells, inhibiting human breast carcinoma tumor growth in particular and to treat diseases or disorders associated with securin, including elevated securin levels. | 10-29-2009 |
20090298820 | 3-SUBSTITUTED-1H-PYRROLO[2,3-B]PYRIDINE AND 3-SUBSTITUTED-1H-PYRROLO[3,2-B]PYRIDINE COMPOUNDS, THEIR USE AS MTOR KINASE AND PI3 KINASE INHIBITORS, AND THEIR SYNTHESES - The invention relates to 3-substituted-1H-pyrrolo[2,3-b]pyridine, and 3-substituted-1H-pyrrolo[3,2-b]pyridine compounds of the Formula 1: | 12-03-2009 |
20090311217 | 3-SUBSTITUTED-1H-INDOLE COMPOUNDS, THEIR USE AS MTOR KINASE AND PI3 KINASE INHIBITORS, AND THEIR SYNTHESES - The invention relates to 3-substituted-1H-indole compounds of the Formula I: | 12-17-2009 |
20100061982 | 3-SUBSTITUTED-1H-INDOLE, 3-SUBSTITUTED-1H-PYRROLO[2,3-B]PYRIDINE AND 3-SUBSTITUTED-1H-PYRROLO[3,2-B]PYRIDINE COMPOUNDS, THEIR USE AS MTOR KINASE AND PI3 KINASE INHIBITORS, AND THEIR SYNTHESES - The invention relates to 3-substituted-1H-indole, 3-substituted-1H-pyrrolo[2,3-b]pyridine, and 3-substituted-1H-pyrrolo[3,2-b]pyridine compounds of the Formula 1: | 03-11-2010 |
20100068204 | 4-ARYLOXYQUINOLIN-2(1H)-ONES AS MTOR KINASE AND PI3 KINASE INHIBITORS, FOR USE AS ANTI-CANCER AGENTS - Compounds of the formula I | 03-18-2010 |
Len Y. Tsou, New City, NY US
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20110093823 | SEMICONDUCTOR INTER-FIELD DOSE CORRECTION - A method and apparatus are provided for adapting a semiconductor inter-field dose correction map from a first photolithography mask to a second photolithography mask using the same manufacturing stack and reactive ion etching processes, the method including: obtaining a first dose correction map for the first photolithography mask as a function of first chip or die identities; determining a first transformation matrix from the first chip or die identities of the first photolithography mask into an orthogonal coordinate system; determining a second transformation matrix from second chip or die identities of the second photolithography mask into the orthogonal coordinate system; and transforming the first dose correction map for the first photolithography mask into a second dose correction map for the second photolithography mask in correspondence with each of the first and second transformation matrices. | 04-21-2011 |
Len Yuan Tsou, New City, NY US
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20080286698 | Semiconductor device manufacturing methods - Methods for manufacturing semiconductor devices are disclosed. One preferred embodiment is a method of processing a semiconductor device. The method includes providing a workpiece having a material layer to be patterned disposed thereon. A masking material is formed over the material layer of the workpiece. The masking material includes a lower portion and an upper portion disposed over the lower portion. The upper portion of the masking material is patterned with a first pattern. An additional substance is introduced and the lower portion of the masking material is patterned. The masking material and the additional substance are used to pattern the material layer of the workpiece. | 11-20-2008 |
20080305623 | Semiconductor device manufacturing methods - Methods for manufacturing semiconductor devices are disclosed. In a preferred embodiment, a method of processing a semiconductor device includes providing a workpiece, the workpiece comprising a material layer to be patterned disposed thereon. A hard mask is formed over the material layer. A first pattern is formed in the hard mask and an upper portion of the material layer using a first etch process. A second pattern is formed in the hard mask and the upper portion of the material layer using a second etch process, the second pattern being different than the first pattern. The first pattern and the second pattern are formed in a lower portion of the material layer using a third etch process and using the hard mask as a mask. | 12-11-2008 |
20110183266 | Semiconductor Device Manufacturing Methods - Methods for manufacturing semiconductor devices are disclosed. One preferred embodiment is a method of processing a semiconductor device. The method includes providing a workpiece having a material layer to be patterned disposed thereon. A masking material is formed over the material layer of the workpiece. The masking material includes a lower portion and an upper portion disposed over the lower portion. The upper portion of the masking material is patterned with a first pattern. A polymer material is disposed over the masking material. The masking material and the polymer layer are used to pattern the material layer of the workpiece. | 07-28-2011 |
Len Yuan Tsou, New York City, NY US
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20080220609 | Methods of Forming Mask Patterns on Semiconductor Wafers that Compensate for Nonuniform Center-to-Edge Etch Rates During Photolithographic Processing - Methods of forming integrated circuit devices include steps to selectively widen portions of a mask pattern extending adjacent an outer edge of a semiconductor wafer. These steps to selectively widen portions of the mask pattern are performed so that more uniform center-to-edge critical dimensions (CD) can be achieved when the mask pattern is used to support photolithographically patterning of underlying layers (e.g., insulating layers, antireflective coatings, etc.). | 09-11-2008 |
Lun K. Tsou, New York, NY US
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20100203647 | Chemical Reporters of Protein Acylation - Methods and kits for detecting acylated proteins produced by cells that have been cultured or by cells within an organism are provided. Also provided are methods and kits for detecting acylated proteins produced by cells where affinity purification tags are that facilitate detection are used. Compounds useful for the detection of acylated proteins are also provided. | 08-12-2010 |