Tsai-Yu
Tsai-Yu Chen, Kaohsiung City TW
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20150162510 | LIGHT EMITTING DIODE MODULE - A light emitting diode module includes a lead frame, a first light emitting diode chip, a second light emitting diode chip, an encapsulant, and a lens structure. The lead frame has a die-bonding surface and a side wall together defining an accommodating recess. The encapsulant is filled in the accommodating recess, and covers the first and the second light emitting diode chips. The lens structure disposed on the lead frame has a bottom surface, a reflective surface, a first, a second, a third, and a fourth light emitting curved surface. The light emitting curved surfaces are respectively disposed opposite to the bottom surface. An adjacent position among the light emitting curved surfaces is a lowest point nearest to the bottom surface. The first and the second light emitting diode chips are disposed at the projections of the first and the second light emitting curved surface on the die-bonding surface. | 06-11-2015 |
Tsai-Yu Huang, Boise, ID US
Patent application number | Description | Published |
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20110279979 | Constructions Comprising Rutile-Type Titanium Oxide; And Methods Of Forming And Utilizing Rutile-Type Titanium Oxide - Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks. | 11-17-2011 |
20130316153 | Constructions Comprising Rutile-Type Titanium Oxide; And Methods of Forming and Utilizing Rutile-Type Titanium Oxide - Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks. | 11-28-2013 |
Tsai-Yu Huang, Taoyuan County TW
Patent application number | Description | Published |
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20140021599 | THREE-DIMENSIONAL INTEGRATED CIRCUITS AND FABRICATION THEREOF - A three-dimensional integrated circuit is disclosed, including a first interposer including through substrate vias (TSV) therein and circuits thereon; a plurality of first active dies disposed on a first side of the first interposer, a plurality of first intermediate interposers, each including through substrate vias (TSV), disposed on the first side of the first interposer, and a second interposer including through substrate vias (TSV) therein and circuits thereon supported by the first intermediate interposers. | 01-23-2014 |