Patent application number | Description | Published |
20080225298 | High throughput brightfield/darkfield water inspection system using advanced optical techniques - The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate. | 09-18-2008 |
20080285023 | Optical inspection of a specimen using multi-channel responses from the specimen - A method and inspection system to inspect a first pattern on a specimen for defects against a second pattern that is intended to be the same where the second pattern has known responses to at least one probe. The inspection is performed by applying at least one probe to a point of the first pattern on the specimen to generate at least two responses from the specimen. Then the first and second responses are detected from the first pattern, and each of those responses is then compared with the corresponding response from the same point of the second pattern to develop first and second response difference signals. Those first and second response difference signals are then processed together to unilaterally determine a first pattern defect list. | 11-20-2008 |
20100033716 | Optical inspection of a specimen using multi-channel responses from the specimen - A method and inspection system to inspect a first pattern on a specimen for defects against a second pattern that is intended to be the same where the second pattern has known responses to at least one probe. The inspection is performed by applying at least one probe to a point of the first pattern on the specimen to generate at least two responses from the specimen. Then the first and second responses are detected from the first pattern, and each of those responses is then compared with the corresponding response from the same point of the second pattern to develop first and second response difference signals. Those first and second response difference signals are then processed together to unilaterally determine a first pattern defect list. | 02-11-2010 |
20120323356 | METHOD OF OPTIMIZING AN OPTICAL PARAMETRIC MODEL FOR STRUCTURAL ANALYSIS USING OPTICAL CRITICAL DIMENSION (OCD) METROLOGY - Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure. | 12-20-2012 |
20130080984 | PROCESS AWARE METROLOGY - Systems and methods for process aware metrology are provided. | 03-28-2013 |
20130222795 | Optical Metrology Using Targets With Field Enhancement Elements - Methods and systems for enhancing metrology sensitivity to particular parameters of interest are presented. Field enhancement elements (FEEs) are constructed as part of a specimen to enhance the measurement sensitivity of structures of interest present on the specimen. The design of the FEEs takes into account measurement goals and manufacturing design rules to make target fabrication compatible with the overall device fabrication process. Measurement of opaque materials, high-aspect ratio structures, structures with low-sensitivity, or mutually correlated parameters is enhanced by the addition of FEEs. Exemplary measurements include critical dimension, film thickness, film composition, and optical scatterometry overlay. In some examples, a target element includes different FEEs to improve the measurement of different structures of interest. In other examples, different target elements include different FEEs. In some other examples, field enhancement elements are shaped to concentrate an electric field in a thin film deposited over the FEE. | 08-29-2013 |
20130282340 | Process Aware Metrology - Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values. | 10-24-2013 |
20140001370 | EUV High Throughput Inspection System For Defect Detection On Patterned EUV Masks, Mask Blanks, And Wafers | 01-02-2014 |
20140217299 | EUV High Throughput Inspection System For Defect Detection On Patterned EUV Masks, Mask Blanks, And Wafers - Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long. | 08-07-2014 |
Patent application number | Description | Published |
20090284076 | FAULT-TOLERANT BATTERY SET AND START-UP BATTERY MODULE - A fault-tolerant battery set and a start-up battery module are described. The fault-tolerant battery set includes a main battery module, a battery monitoring unit, a control switch unit, and a back-up battery module. The main battery module includes a battery unit and a battery monitoring circuit. When the battery unit fails, the control switch unit conducts a power supply connection path according to a failure signal sent from the battery monitoring circuit, so as to replace the failed main battery module with a back-up power provided by the back-up battery module through the power supply connection path. | 11-19-2009 |
20100052602 | ELECTRICAL ENERGY STORAGE DEVICE FOR SOLAR CELL - An electrical energy storage device for a solar cell includes at least one electrode substrate coated with a oxide or mixed oxides layer. When the electrical energy storage device is electrically connected with a receive unit of the solar unit in parallel, the electrical energy storage device can have the advantages of high electric energy density, enhancing the charging efficiency of the solar cell, and reducing the charging time of the solar cell. | 03-04-2010 |
20100294800 | PORTABLE ELECTRICAL LIQUID DISPENSING APPARATUS - A portable electrical liquid dispensing apparatus includes a housing, a power supply detachably connected with the housing, a driving unit accommodated in the housing and electrically connected with the power supply, a liquid dispensing unit accommodated in the housing and coupled to the driving unit, a first dispensing pipe having a first entry end and a first exhaust end connected with the liquid dispensing unit, and a second dispensing pipe having a second entry end connected with the liquid dispensing unit and a second exhaust end. When the electrical liquid dispensing apparatus is used, the liquid dispensing unit can be driven by the driving unit to dispense the fuel from a fuel tank into an agricultural machine through the first dispensing pipe and the second dispensing pipe, thereby enhancing the efficiency and convenience of refueling operation. | 11-25-2010 |
Patent application number | Description | Published |
20100163847 | QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS - Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well. | 07-01-2010 |
20100193771 | QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS - Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well. | 08-05-2010 |
20110121266 | QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS - Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well. | 05-26-2011 |
20120231596 | QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS - Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well. | 09-13-2012 |
20130234113 | QUANTUM WELL MOSFET CHANNELS HAVING LATTICE MISMATCH WITH METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS - Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well. | 09-12-2013 |