Troger
Hans Jorg Troger, Raron CH
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20090104727 | HIGH POWER SEMICONDUCTOR LASER DIODES - A high power laser source comprises a bar of laser diodes, a submount onto which said laser bar is affixed, and a cooler onto which said submount is affixed. The laser bar has a first coefficient of thermal expansion (CTE | 04-23-2009 |
Joerg Troger, Raron CH
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20090097511 | LASER LIGHT SOURCE AND METHOD OF OPERATING THE SAME - A laser light source comprises a semiconductor laser adapted for pulsed operation, a partially transmitting wavelength selective light reflector. The semiconductor laser comprises a front facet and a back facet. The front facet and the back facet define an internal laser cavity. The internal laser cavity comprises a laser active medium. The partially transmitting wavelength selective light reflector has a peak reflectivity within a gain bandwidth of said laser active medium. The wavelength selective light reflector and the back facet define an external laser cavity. A roundtrip time of light in the external laser cavity is about 20 nanoseconds or less. A full width half maximum bandwidth of the wavelength selective light reflector is adapted to accommodate at least 12 longitudinal modes of the internal laser cavity and at least 250 longitudinal modes of the external laser cavity. | 04-16-2009 |
20100189152 | HIGH POWER SEMICONDUCTOR LASER DIODE - Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection. | 07-29-2010 |
20100220762 | HIGH POWER SEMICONDUCTOR OPTO-ELECTRONIC DEVICE - Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer ( | 09-02-2010 |
Jörg Troger, Raron CH
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20130028283 | HIGH SPEED VERTICAL-CAVITY SURFACE-EMITTING LASER - There is described a high speed vertical-cavity surface-emitting laser (VCSEL) comprising a substrate and first and second distributed Bragg reflectors (DBRs) disposed on the substrate, each comprising a stack of layers of alternating refractive index. A resonant cavity is disposed between the DBRs and an active region disposed in the resonant cavity. The resonant cavity is formed of material having low refractive index and has an optical thickness in a direction perpendicular to the substrate of | 01-31-2013 |
20130070800 | SEMICONDUCTOR LASER DIODES - A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode. | 03-21-2013 |
Jörg Troger, Raron CH
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20130028283 | HIGH SPEED VERTICAL-CAVITY SURFACE-EMITTING LASER - There is described a high speed vertical-cavity surface-emitting laser (VCSEL) comprising a substrate and first and second distributed Bragg reflectors (DBRs) disposed on the substrate, each comprising a stack of layers of alternating refractive index. A resonant cavity is disposed between the DBRs and an active region disposed in the resonant cavity. The resonant cavity is formed of material having low refractive index and has an optical thickness in a direction perpendicular to the substrate of | 01-31-2013 |
20130070800 | SEMICONDUCTOR LASER DIODES - A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode. | 03-21-2013 |
Marcus Troger, Isernhagen DE
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20100121447 | METHOD FOR REPLACING A LIGAMENT IN A KNEE - A method of providing a replacement anterior cruciate ligament (ACL) provides a tibial tunnel and at least one femoral tunnel for receiving the replacement ligament, the femoral and tibial tunnels not being colinear but rather in an orientation that more closely mimics the natural ACL. The femoral tunnel is formed through the anterior medial portal. A cross pinning guide having a femoral rod for insertion into the femoral tunnel, a spaced apart arc shaped track and a guide block having one or more bores aligned with the femoral rod whereby an instrument inserted through one of the bores creates a pilot hole for the cross pin which intersects the femoral tunnel and an appropriate angle thereof which avoids ligaments and other sensitive tissue can be selected by adjusting the guide block along the track. | 05-13-2010 |
Matthias Troger, Nordhausen DE
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20090068430 | WOOD-FIBRE HEAT-INSULATING MATERIAL AND METHOD FOR THE PRODUCTION THEREOF - The invention relates to a biologically degradable heat-insulating material. In order to provide an improved biologically degradable heat-insulating material, the invention proposes a biologically degradable heat-insulating material containing 50 to 90 wt. % of a cellulose and/or wood fibre having an average fibre diameter of 1 mm or less and an average fibre length of 20 mm or less, 2 to wt. % of a flame-retardant agent as well as 5 to 30 wt. % of a biologically degradable binder in the form of bico fibres having an average fibre diameter of 1 mm or less and a fibre length of 20 mm or less, wherein the density of the heat-insulating material is 30 to 300 kg/m | 03-12-2009 |
Michael Troger, Hanau DE
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20090067473 | Device for measuring the termperature in a solid phase polycondensation - The invention relates to a measuring device for measuring the temperature in a reactor container which can be crossflown by bulk material, in particular in a solid phase polycondensation, which takes place in an SSP-reactor. The aim of the invention is to protect the measuring device against mechanical stresses. Said aim is achieved by virtue of the fact that the measuring device, which is used to measure temperature, comprises at least one metal profile, at least one measuring tube and at least one sensor which is arranged therein. The metal profile can be connected to the walls of the reactor container and the measuring tube is connected to the metal profile such that it is partially reinforced on the external wall thereof by means of the metal profile. As a result, the measuring tube is soldered, screwed, riveted or rigidly connected in another manner to the metal profile. The metal profile is then secured to the inner wall of the reactor container. Another advantage thereof is that the weight, which is exerted on the column of the bulk material, is partially applied to the SSP reactors which are equipped with the measuring devices. | 03-12-2009 |
Uwe Troger, Langweld DE
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20130206271 | Exhaust System - An exhaust system for motor vehicles has a component made from a coated steel sheet. The steel sheet has a thickness of at most 4.5 mm and is formed of a ferritic stainless steel having a chromium content of from 10.5% to 25%, a molybdenum content of from 0 to 2.5%, and a titanium and/or niobium content of from 0.1 to 2% each. The coating of the steel sheet consists essentially of nickel. | 08-15-2013 |