Totsuka, Tokyo
Hidekazu Totsuka, Tokyo JP
Patent application number | Description | Published |
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20080259767 | Objective optical element and optical pickup apparatus - An objective optical element of an optical pickup apparatus has a magnification m | 10-23-2008 |
20110199882 | Objective Lens and Optical Pickup Device - There are provided an optical pickup apparatus which can record/reproduce information properly at a time of temperature change or of using a multilayer disc, and an objective lens for use in the same. When temperature changes, spherical aberration resulting from a change in refractive index of objective lens OBJ increases. Therefore, collimation lens CL is moved by uniaxial actuator AC | 08-18-2011 |
Mamoru Totsuka, Tokyo JP
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20090142374 | COMPOSITION FOR IMMUNOSTIMULATION - The present invention relates to a composition for immunostimulation useful for promoting IgA and secretory component productions in mucosal tissues, comprising, alone or in combination, a cell of bifidobacterium belonging to | 06-04-2009 |
Masahiro Totsuka, Tokyo JP
Patent application number | Description | Published |
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20080296741 | SEMICONDUCTOR DEVICE - Passivation films including first and second layers (first passivation film) are formed on a GaAs substrate (semiconductor substrate). A SiN film (second passivation film) is formed on the passivation films as a top layer passivation film by a catalytic chemical vapor deposition. The SiN film formed by catalytic chemical vapor deposition has a lower degree of hygroscopicity than that of a conventional SiN film formed by plasma chemical vapor deposition. | 12-04-2008 |
20100105214 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Passivation films including first and second layers (first passivation film) are formed on a GaAs substrate (semiconductor substrate). A SiN film (second passivation film) is formed on the passivation films as a top layer passivation film by catalytic chemical vapor deposition. The SiN film formed by catalytic chemical vapor deposition has a lower degree of hygroscopicity than that of a conventional SiN film formed by plasma chemical vapor deposition. | 04-29-2010 |
20100127350 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a lower electrode on a semiconductor substrate, applying a photoresist on the lower electrode, forming an opening in the photoresist spaced from the periphery of the lower electrode, forming a high-dielectric constant film of a high-k material having a dielectric constant of 10 or more, performing liftoff so that the high-dielectric-constant film remains on the lower electrode, and forming an upper electrode on the high-dielectric-constant film remaining after the liftoff. | 05-27-2010 |
20110031587 | SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a lower electrode on a semiconductor substrate, applying a photoresist on the lower electrode, forming an opening in the photoresist spaced from the periphery of the lower electrode, forming a high-dielectric constant film of a high-k material having a dielectric constant of 10 or more, performing liftoff so that the high-dielectric-constant film remains on the lower electrode, and forming an upper electrode on the high-dielectric-constant film remaining after the liftoff. | 02-10-2011 |
20140217548 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a metal film on a portion of the substrate, a first dielectric film having a first portion on the metal film and a second portion on the substrate, the second portion being integral with the first portion, a lower electrode on the first portion, a second dielectric film having a first portion on the lower electrode and a second portion on the first dielectric film, the second portion of the second dielectric film being integral with the first portion of said second dielectric film, an upper electrode on a portion of the second dielectric film, and a reinforcing film disposed on the second dielectric film and in contact with a side of the upper electrode. | 08-07-2014 |
Takao Totsuka, Tokyo JP
Patent application number | Description | Published |
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20140298340 | VIRTUAL MACHINE SYSTEM, VIRTUALIZATION MECHANISM, AND DATA MANAGEMENT METHOD - Data stored in a memory area of physical memory corresponding to a function read-destination address is accessible in an appropriate manner by a virtual machine. A virtual machine system has a virtual machine management part for managing a virtual machine, and logical processors of virtual machines. The virtual machine management part, on the basis of a physical APCI table, creates a logical APCI table in a logical memory area. A logical processor stores, in an exchange memory area, an address and a size of a memory area in the memory targeted for access by a prescribed function in a control method included in the logical APCI table. The virtual machine management part acquires the address and the size from the exchange memory area, acquires the corresponding memory area data, and stores the acquired data in the logical memory area. The logical processor acquires the data of the logical memory area. | 10-02-2014 |
20150121372 | VIRTUAL COMPUTER SYSTEM FOR RESTORING NETWORK CONNECTION OF LIVE-MIGRATED VIRTUAL COMPUTER - The network connection of a VM (target VM) that has been live-migrated from a first physical computer to a second physical computer is restored in a virtual computer system in which communication is performed using a certain type of information outside the jurisdiction of a virtualization mechanism. When receiving a packet from the VM, the first virtualization mechanism of the first physical computer extracts a certain type of information from the packet and registers the extracted certain type of information in a first management information unit. The first virtualization mechanism transmits the certain type of information in the first management information unit to the second virtualization mechanism of the second physical computer during live migration. The second virtualization mechanism registers the certain type of information in a second management information unit and transmits a certain type of packet including the certain type of information from at least one of one or more physical I/O devices of the second physical computer in order to restore the network connection of the target VM. | 04-30-2015 |
Takashi Totsuka, Tokyo JP
Patent application number | Description | Published |
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20100025480 | IC CARD AND IC CARD SOCKET - A technique for an IC capable of achieving the large expandability of the memory capacity, a memory capacity and cost burden in accordance with the requirements of users is provided. The IC card of the present invention is a flash memory card | 02-04-2010 |
20100072284 | SEMICONDUCTOR DEVICE AND ADAPTOR FOR THE SAME - Connector terminals are arranged at the center of a thin memory card | 03-25-2010 |
Toshiyuki Totsuka, Tokyo JP
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20130049292 | MEDIA CASSETTE HOUSING SYSTEM AND IMAGE FORMATION APPARATUS - A media cassette housing system, which may be usable in an image formation apparatus such as a printer or copier, includes: a guide member configured to guide an insertion of a media cassette from an entrance into an installed position of a cassette housing unit and to guide a pulling out of the media cassette from the installed position to the entrance of the cassette housing unit; and a swingable member provided to the guide member and swingable in inserting and pulling directions of the media cassette. The swingable member includes a slide guide surface configured to come into sliding contact with a slide surface of the media cassette upon the insertion and pulling of the medium cassette. | 02-28-2013 |
20140191463 | MEDIA CASSETTE HOUSING APPARATUS - A media cassette housing system, which may be usable in an image formation apparatus such as a printer or copier, includes: a guide member configured to guide an insertion of a media cassette from an entrance into an installed position of a cassette housing unit and to guide a pulling out of the media cassette from the installed position to the entrance of the cassette housing unit; and a swingable member provided to the guide member and swingable in inserting and pulling directions of the media cassette. The swingable member includes a slide guide surface configured to come into sliding contact with a slide surface of the media cassette upon the insertion and pulling of the medium cassette. | 07-10-2014 |
Yasuhito Totsuka, Tokyo JP
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20150117937 | FLUX-CORED WIRE FOR WELDING ULTRAHIGH TENSILE STRENGTH STEEL - In a flux-cored wire for welding an ultrahigh tensile strength steel, one or more of CaF | 04-30-2015 |
Yonetaro Totsuka, Tokyo JP
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20100005324 | SUBSTRATE BIAS SWITCHING UNIT FOR A LOW POWER PROCESSOR - The feature of the present invention consists in: a processor main circuit for executing program instruction strings on a processor chip; a substrate bias switching unit for switching voltages of substrate biases applied to a substrate of the processor main circuit; and an operation mode control unit for controlling, in response to the execution of an instruction to proceed to a stand-by mode in the processor main circuit, the substrate bias switching unit in such a way that the biases are switched over to voltages for the stand-by mode, and for controlling, in response to an interruption of the stand-by release from the outside, the substrate bias switching unit in such a way that the biases are switched over to voltages for a normal mode, and also for releasing, after the bias voltages switched thereto have been stabilized, the stand-by of the processor main circuit to restart the operation. | 01-07-2010 |
20110208983 | SUBSTRATE BIAS SWITCHING UNIT FOR A LOW POWER PROCESSOR - The feature of the present invention consists in: a processor main circuit for executing program instruction strings on a processor chip; a substrate bias switching unit for switching voltages of substrate biases applied to a substrate of the processor main circuit; and an operation mode control unit for controlling, in response to the execution of an instruction to proceed to a stand-by mode in the processor main circuit, the substrate bias switching unit in such a way that the biases are switched over to voltages for the stand-by mode, and for controlling, in response to an interruption of the stand-by release from the outside, the substrate bias switching unit in such a way that the biases are switched over to voltages for a normal mode, and also for releasing, after the bias voltages switched thereto have been stabilized, the stand-by of the processor main circuit to restart the operation. | 08-25-2011 |
Yoshio Totsuka, Tokyo JP
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20150122597 | DISK BRAKE PAD AND DISK BRAKE APPARATUS - A disk brake pad includes a lining and a back plate supporting the lining. A first side part of the back plate in the circumferential direction includes a guided portion configured to engage movably in the axial direction with a guiding portion of a pad support member. The guided portion is disposed at a position more inward in the radial direction than a line of action of a brake tangential force applied in braking, so as to support a brake tangential force applied toward a second side part of the back plate in the circumferential direction in braking. The back plate is configured to support a brake tangential force applied toward the first side part in braking at a portion thereof that exists more outward in the radial direction than the line of action of the brake tangential force. | 05-07-2015 |