Patent application number | Description | Published |
20090004772 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate. | 01-01-2009 |
20090057672 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film. | 03-05-2009 |
20090061721 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device having flexibility by separating an element that is manufactured by a comparatively low-temperature (temperature of less than 500° C.) process from a substrate is provided. The element is separated from a glass substrate by the following steps: forming a silicone layer over a glass substrate; performing plasma treatment to the surface of the silicone layer to weaken the surface of the silicone layer; stacking an organic compound layer over the silicone layer; and forming an element that is manufactured through a process at a comparatively low-temperature, typically, a temperature that the organic compound can withstand, over the compound layer. | 03-05-2009 |
20090152559 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE - A manufacturing method of a thin film transistor and a display device using a small number of masks is provided. A first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked. Then, a resist mask having a recessed portion is formed thereover using a multi-tone mask. First etching is performed to form a thin-film stack body, and second etching in which the thin-film stack body is side-etched is performed to form a gate electrode layer. The resist is made to recede, and then, a source electrode, a drain electrode, and the like are formed; accordingly, a thin film transistor is manufactured. | 06-18-2009 |
20090261328 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a thin film transistor which includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which functions as a channel formation region; and a semiconductor layer including an impurity element imparting one conductivity type. The semiconductor layer exists in a state that a plurality of crystalline particles is dispersed in an amorphous silicon and that the crystalline particles have an inverted conical or inverted pyramidal shape. The crystalline particles grow approximately radially in a direction in which the semiconductor layer is deposited. Vertexes of the inverted conical or inverted pyramidal crystal particles are located apart from an interface between the gate insulating layer and the semiconductor layer. | 10-22-2009 |
20090267068 | THIN FILM TRANSISTOR - The thin film transistor includes a gate insulating layer covering a gate electrode, over a substrate having an insulating surface; a semiconductor layer forming a channel formation region, in which a plurality of crystal regions is included in an amorphous structure; an impurity semiconductor layer imparting one conductivity type which forms a source region and a drain region; and a buffer layer formed from an amorphous semiconductor, which is located between the semiconductor layer and the impurity semiconductor layer. The thin film transistor includes the crystal region which includes minute crystal grains and inverted conical or inverted pyramidal grain each of which grows approximately radially from a position away from an interface between the gate insulating layer and the semiconductor layer toward a direction in which the semiconductor layer is deposited in a region which does not reach the impurity semiconductor layer. | 10-29-2009 |
20090321737 | THIN FILM TRANSISTOR - A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced. | 12-31-2009 |
20090321743 | THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A thin film transistor includes, as a buffer layer, an amorphous semiconductor layer having nitrogen or an NH group between a gate insulating layer and source and drain regions and at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced. | 12-31-2009 |
20100096631 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which includes a plurality of crystalline regions in an amorphous structure and which forms a channel formation region, in contact with the gate insulating layer; a semiconductor layer including an impurity element imparting one conductivity type, which forms source and drain regions; and a buffer layer including an amorphous semiconductor between the semiconductor layer and the semiconductor layer including an impurity element imparting one conductivity type. The crystalline regions have an inverted conical or inverted pyramidal crystal particle which grows approximately radially in a direction in which the semiconductor layer is deposited, from a position away from an interface between the gate insulating layer and the semiconductor layer. | 04-22-2010 |
20100148175 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - Off current of a bottom gate thin film transistor in which a semiconductor layer is shielded from light by a gate electrode is reduced. A thin film transistor includes a gate electrode layer; a first semiconductor layer; a second semiconductor layer, provided on and in contact with the first semiconductor layer; a gate insulating layer between and in contact with the gate electrode layer and the first semiconductor layer; impurity semiconductor layers in contact with the second semiconductor layer; and source and drain electrode layers partially in contact with the impurity semiconductor layers and the first and second semiconductor layers. The entire surface of the first semiconductor layer on the gate electrode layer side is covered by the gate electrode layer; and a potential barrier at a portion where the first semiconductor layer is in contact with the source or drain electrode layer is 0.5 eV or more. | 06-17-2010 |
20100285624 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film. | 11-11-2010 |
20100327281 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current. | 12-30-2010 |
20110121300 | DISPLAY DEVICE - An object is to provide a display device whose frame can be narrowed and whose display characteristics are excellent. The display device includes a driver circuit and a pixel portion. The driver circuit and the pixel portion are formed using a dual-gate thin film transistor and a single-gate thin film transistor, respectively. In the dual-gate thin film transistor in the display device, a semiconductor layer is formed using a microcrystalline semiconductor region and a pair of amorphous semiconductor regions, and a gate insulating layer and an insulating layer are in contact with the microcrystalline semiconductor region of the semiconductor layer. | 05-26-2011 |
20110147754 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - Disclosed is a thin film transistor including: a gate insulating layer covering a gate electrode; a microcrystalline semiconductor region over the gate insulating layer; a pair of amorphous semiconductor region over the microcrystalline semiconductor; a pair of impurity semiconductor layers over the amorphous semiconductor regions; and wirings over the impurity semiconductor layers. The microcrystalline semiconductor region has a surface having a projection and depression on the gate insulating layer side. The microcrystalline semiconductor region includes a first microcrystalline semiconductor region which is not covered with the amorphous regions and a second microcrystalline semiconductor region which is in contact with the amorphous semiconductor regions. A thickness d | 06-23-2011 |
20110204364 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A method for manufacturing a thin film transistor having high electric characteristics with high productivity. In the method for forming a channel region of a dual-gate thin film transistor including a first gate electrode and a second gate electrode which faces the first gate electrode with the channel region provided therebetween, a first microcrystalline semiconductor film is formed under a first condition for forming a microcrystalline semiconductor film in which a space between crystal grains is filled with an amorphous semiconductor, and a second microcrystalline semiconductor film is formed over the first microcrystalline semiconductor film under a second condition for promoting crystal growth. | 08-25-2011 |
20110248291 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate. | 10-13-2011 |
20120061676 | THIN FILM TRANSISTOR - A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness. | 03-15-2012 |
20120129288 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film. | 05-24-2012 |
20120156835 | ETCHING METHOD AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - The amorphous silicon film is formed over the microcrystalline silicon film, and plasma treatment is performed on the amorphous silicon film in a mixed gas atmosphere of H | 06-21-2012 |
20120229747 | LIQUID CRYSTAL DISPLAY DEVICE - Provided are a liquid crystal display device with horizontal electric field mode, in which a decrease in driving speed can be suppressed by reducing the resistance of a wiring even when the number of pixels is increased, and a manufacturing method thereof. One of a scan wiring and a signal wiring is divided in an intersection portion where the scan wiring and the signal wiring intersect with each other, and the separated wirings are connected with a connection electrode positioned over a thick insulating film. Accordingly, parasitic capacitance at the intersection portion can be reduced, preventing the decrease in the driving speed. The connection electrode is formed at the same time as formation of a pixel electrode and a common electrode using a low-resistance metal, which contributes to the reduction in manufacturing process of the liquid crystal display device. | 09-13-2012 |
20130095617 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility, A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current. | 04-18-2013 |
20140035456 | Display Device - To improve image quality of a full-color organic EL display panel. A partition has a stacked structure formed using different materials. A lower partition has a curved shape, and an upper partition has a flat top surface. An angle formed between a plane surface connecting a lower end of a side surface with an upper end of the side surface of the upper partition and the top surface of the upper partition is less than or equal to 90°. The height of the partition is controlled to be greater than or equal to 0.5 μm and less than or equal to 1.3 μm. With such a structure, a large color organic EL display panel achieves high-definition display. | 02-06-2014 |