| Patent application number | Description | Published |
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| 20080204619 | Display device - A display device in which gate drive circuits are formed at both sides of an effective screen, and a static charge shield conductive film is formed to cover the gate drive circuits. In the manufacturing step and after producing the display device, the constant voltage is applied to the static charge shield conductive film via the common pad, the earth connection line and the like. | 08-28-2008 |
| 20080278650 | DISPLAY DEVICE - An inverter includes an input inverter having a high-resistance load and a first transistor and an output buffer including second and third transistors coupled in series. A power supply voltage is provided to satisfy an inequality VDD | 11-13-2008 |
| 20080297501 | ACTIVE MATRIX DISPLAY DEVICE - A display device includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element. | 12-04-2008 |
| 20080303030 | Display device and method of manufacturing the same - A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode. | 12-11-2008 |
| 20080308811 | Display device - The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view. | 12-18-2008 |
| 20080316385 | Liquid crystal display device - Three layers are formed on a TFT substrate SUB | 12-25-2008 |
| 20090065777 | Display Device and Manufacturing Method Therefor - In a display device of the present invention which forms thin film transistors on a substrate, the thin film transistor comprises: a silicon nitride film which is formed on the substrate in a state that the silicon nitride film covers a gate electrode; a silicon oxide film which is selectively formed on the silicon nitride film; a semiconductor layer which is formed at least on an upper surface of the silicon oxide film and includes a pseudo single crystal layer or a polycrystalline layer; and a drain electrode and a source electrode which are formed on an upper surface of the semiconductor layer by way of a contact layer, wherein either one of the pseudo single crystal layer and the poly-crystalline layer is formed by crystallizing the amorphous silicon layer, and a peripheral-side wall surface of the pseudo single crystal layer or the polycrystalline layer is contiguously constituted with a peripheral-side wall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without a stepped portion. | 03-12-2009 |
| 20090095957 | Display device and method of manufacturing display device - To provide a display device, including a polysilicon thin film transistor, which achieves a reduction of an off current with a simple configuration and with only a slight increase in a number of processes. A display device includes: an insulating substrate, and a thin film transistor formed on the insulating substrate, wherein a semiconductor layer of the thin film transistor has a polysilicon layer, a first amorphous silicon layer formed above the polysilicon layer, and a second amorphous silicon layer formed above the first amorphous silicon layer. | 04-16-2009 |
| 20090096732 | Display device - The present invention provides a display device which can achieve the high breakdown voltage proof property, the enhancement of reliability or the expansion of the designing/process tolerance of transistors by the improvement of a circuit. A display device includes a plurality of pixels and a drive circuit which drives the plurality of pixels. The drive circuit includes a p-type first transistor which has a first electrode thereof connected to a first power source line to which a reference voltage V1 is applied, a p-type second transistor which has a first electrode thereof connected to a second electrode of the first transistor and a second electrode thereof connected to an output terminal thereof, an n-type third transistor which has a first electrode thereof connected to a second power source line to which a reference voltage V2 is applied, and an n-type fourth transistor which has a first electrode thereof connected to a second electrode of the third transistor and a second electrode thereof connected to an output terminal thereof. A first bias voltage Vcp is applied to a control electrode of the second transistor and a second bias voltage Vcn is applied to a control electrode of the fourth transistor. Further, a relationship V2| 04-16-2009 | |
| 20090102822 | Display Device - The present invention provides an integral-type liquid crystal display module having a first display panel and a second display panel which can use a display panel of high resolution as the second display panel. The display device includes a first display panel, a second display panel, and a first flexible printed circuit board which connects the first display panel and the second display panel. Here, the first display panel includes display drive means. Video lines of the second display panel are connected with the display drive means through connection lines for video lines of the first flexible printed circuit board. Further, the second display panel includes scanning line drive means which supplies drive voltages to scanning lines of the second display panel. | 04-23-2009 |
| 20090121229 | Display device - In a display device which includes: an insulation substrate; thin film transistors which are formed on the insulation substrate; and terminal portions which are configured to supply voltages to the thin film transistors, the thin film transistor includes a gate electrode and a gate line which is formed of a material equal to a material of the gate electrode, a metal line is connected to the terminal portion, a first insulation film and a second insulation film which is made of a material different from a material of the first insulation film are sequentially stacked on the gate line, an opening which exposes the gate line is formed in the first insulation film and the second insulation film, a side wall surface of the opening is sequentially covered with a protective film, a first transparent conductive film and a third insulation film, the first transparent conductive film and a second transparent conductive film are sequentially stacked on an exposed portion of the gate line, and the second transparent conductive film is connected with the metal line. | 05-14-2009 |
| 20090218574 | Display device and manufacturing method therefor - A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers. | 09-03-2009 |
| 20090218575 | Display device and manufacturing method thereof - Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer. | 09-03-2009 |
| 20090256792 | Display Device - An object of the present invention is to increase the reliability in the level shift operation in a display device provided with a level shift circuit. The display device according to the present invention is characterized in that the above described level shift circuit comprises: a first thin film transistor having a semiconductor layer formed of a polysilicon layer; a waveform rectifying circuit connected to a second electrode of the above described first thin film transistor; and a constant current source and a switching element connected between the second electrode of the above described first thin film transistor and a reference power source, wherein a bias voltage is inputted into a control electrode of the above described first thin film transistor and an input signal is inputted into a first electrode of the above described first thin film transistor. | 10-15-2009 |
| 20100026615 | Liquid Crystal Display Device - A liquid crystal display device includes a plurality of video signal lines; a plurality of video signal input terminals, the number of which is less than the number of video signal lines; and a switch circuit interposed between the plurality of video signal input terminals and the plurality of video signal lines, wherein | 02-04-2010 |
| 20100032680 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith. | 02-11-2010 |
| 20100073389 | Display device - In a display device which arranges a memory part for every display pixel, an erroneous operation of the memory part and the power consumption can be reduced. In a display device provided with a display panel which includes a plurality of display pixels, video lines which apply video data to the display pixels, and scanning lines which apply a scanning voltage to the display pixels, the display pixel includes a memory part which stores the video data, a pixel electrode, and a switching part which selectively applies a first video voltage or a second video voltage which differs from the first video voltage to the pixel electrode in response to the video data stored in the memory part. | 03-25-2010 |
| 20100096645 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films. | 04-22-2010 |
| 20100109009 | DISPLAY DEVICE - Provided is a display device capable of suppressing generation of optical leakage current as well as increase in capacitance in a case where a plurality of thin film transistors (TFTs) including a gate electrode film on a light source side are formed in series. Relative areas of opposing regions between a semiconductor film and the gate electrode film with respect to channel regions are different in at least a part of the plurality of TFTs, to thereby provide a flat panel display having a structure for suppressing increase in capacitance while suppressing generation of optical leakage current. | 05-06-2010 |
| 20100117091 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device having thin film transistors which can acquire an appropriate ON current and an appropriate OFF current and a manufacturing method thereof are provided. A display device includes: a transparent substrate; and a plurality of thin film transistors which are formed on the transparent substrate. Each thin film transistor includes a gate electrode which is stacked on the transparent substrate, a source electrode and a drain electrode which are stacked over the gate electrode, a first semiconductor film which is stacked between the gate electrode, and the source electrode and the drain electrode so as to control an electric current which flows between the source electrode and the drain electrode, an insulation film which is stacked on the first semiconductor film in a contacting manner in a state where a source-electrode-side edge portion and a drain-electrode-side edge portion of the first semiconductor film are exposed, and a second semiconductor film and a third semiconductor film which are stacked between the source-electrode-side edge portion and the source electrode T as well as between the drain-electrode-side edge portion and the drain electrode. The third semiconductor film is connected with the source electrode and the drain electrode by an ohmic contact. The second semiconductor film is formed below the third semiconductor film with resistance higher than resistance of the third semiconductor film. | 05-13-2010 |
| 20100171739 | DISPLAY DEVICE - The present invention provides a display device which includes a common electrode drive circuit having the single channel constitution which can miniaturize a circuit scale without increasing elements compared to a conventional display device. A display device includes a plurality of pixels and a common electrode drive circuit. The common electrode drive circuit includes a plurality of basic circuits, wherein the basic circuit includes a first circuit which latches a first input signal at a point of time that a clock signal is changed to a first voltage level from a second voltage level; a second circuit which latches a second input signal at the point of time that the clock signal is changed to the first voltage level from the second voltage level; a first switching circuit which is turned on based on the first circuit and a second switching circuit which is turned on based on the voltage second circuit. | 07-08-2010 |
| 20100177073 | DISPLAY DEVICE - A display device is provided which includes a common electrode drive circuit having the single channel constitution which can miniaturize a circuit scale without increasing elements compared to a conventional display device. A display device includes a plurality of pixels and a common electrode drive circuit. The common electrode drive circuit includes a plurality of basic circuits, wherein the basic circuit includes a first circuit which latches a first input signal at a point of time that a clock signal is changed to a first voltage level from a second voltage level; a second circuit which latches a second input signal at the point of time that the clock signal is changed to the first voltage level from the second voltage level; a first switching circuit which is turned on based on the first circuit and a second switching circuit which is turned on based on the second circuit. | 07-15-2010 |
| 20100230675 | DISPLAY DEVICE - A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side. | 09-16-2010 |
| 20100245739 | Liquid Crystal Display Device - The present invention provides a liquid crystal display device which can reduce the difference in brightness between an image obtained from a reflection region and an image obtained from a transmission region. The liquid crystal display device includes a pixel electrode and a counter electrode in each pixel region on a liquid-crystal-side surface of one substrate out of respective substrates which are arranged to face each other with liquid crystal therebetween. The pixel region includes a transmission region and a reflection region. A gap between the pixel electrode and the counter electrode in the reflection region is set larger than the gap between the pixel electrode and the counter electrode in the transmission region. | 09-30-2010 |
| 20100253895 | Liquid crystal display device - A liquid crystal display device having a liquid crystal display panel includes a first substrate, a second substrate, and liquid crystal interposed between the first and second substrates. The first substrate includes an active element, a first insulating film formed on the active element, a plurality of first electrodes disposed on the first insulating film, a second insulating film disposed on the first electrodes, and a pixel electrode disposed on the second insulating film. The pixel electrode is electrically coupled to the active element via a portion defining a contact hole formed in a portion defining a clearance between the plurality of first electrodes. | 10-07-2010 |
| 20110001894 | LIQUID CRYSTAL PARALLAX BARRIER, DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal parallax barrier panel has the structure formed by stacking an electrode substrate, a liquid crystal layer and a sealing substrate in order. The electrode substrate includes a glass substrate, a first electrode which is branched in plural stages, a second electrode which is arranged on the same layer as the first electrode and is branched in plural stages, and an alignment film. Out of the first electrode and the second electrode, twig portions which include distal ends of branched portions of one electrode and twig portions which include distal ends of branched portions of another electrode are alternately arranged such that the twig portion which includes the distal end of the branched portion of one electrode enters between two twig portions which include the distal ends of branched portions of another electrode. In a state where slits are not formed in a parallax barrier, the first electrode and the second electrode have the same voltage, while the slits are formed in the parallax barrier when a predetermined voltage is applied to the first electrode. | 01-06-2011 |
| 20110006192 | OPTICAL SENSOR ARRAY AND OPTICAL SENSOR CIRCUIT - Each optical sensor element includes an upper electrode, a lower electrode, and a light dependent variable resistance element formed of amorphous silicon. Each optical sensor pixel includes: a capacitive element between the lower electrode and a reference voltage line; a first transistor inputting a first power source voltage to a second electrode, connecting a first electrode to the lower electrode, and inputting a second clock to a control electrode; a second transistor inputting a second power source voltage to a second electrode, and connecting a control electrode to the lower electrode; and a third transistor connecting a second electrode to a first electrode of the second transistor, connecting a first electrode to the output line, and inputting a first clock to a control electrode. | 01-13-2011 |
| 20110024763 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region. | 02-03-2011 |
| 20110025961 | Transflective liquid crystal display device - A transflective liquid crystal display device with improved display quality in which the liquid initial alignment direction of the liquid crystal layer is in a direction perpendicular to the extending direction of a clearance between the counter electrode of a transmission portion and a counter electrode of a reflection portion or in a direction within a range of ±2° in the clockwise direction perpendicular to the extending direction of the clearance in a case where the liquid crystal layer comprises positive type liquid crystals, or the liquid crystal initial alignment direction of the liquid crystal layer is in a direction parallel with the extending direction of a clearance, or a direction within a range of ±2° in the clockwise direction relative to the extending direction of the clearance in a case where the liquid crystal layer comprises negative type liquid crystals. | 02-03-2011 |
