Patent application number | Description | Published |
20090042058 | MAGNETIC SEMICONDUCTOR MATERIAL - A magnetic semiconductor material contains at least one type of transition metals (Mn | 02-12-2009 |
20090278122 | AMORPHOUS OXIDE AND THIN FILM TRANSISTOR - The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 | 11-12-2009 |
20090280600 | AMORPHOUS OXIDE AND THIN FILM TRANSISTOR - The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 | 11-12-2009 |
20110002832 | SUPERCONDUCTING COMPOUND AND METHOD FOR PRODUCING THE SAME - Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F | 01-06-2011 |
20110045985 | SUPERCONDUCTOR COMPRISING LAMELLAR COMPOUND AND PROCESS FOR PRODUCING THE SAME - A superconductor which comprises a new compound composition substituting for perovskite copper oxides. The superconductor is characterized by comprising a compound which is represented by the chemical formula A(TM) | 02-24-2011 |
20110101352 | AMORPHOUS OXIDE AND THIN FILM TRANSISTOR - The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 | 05-05-2011 |
20110111965 | LAYERED COMPOUND, SUPERCONDUCTOR AND METHOD FOR PRODUCING SAME - Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor. | 05-12-2011 |
20110201162 | AMORPHOUS OXIDE AND THIN FILM TRANSISTOR - The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 | 08-18-2011 |
20120012838 | SWITCHING ELEMENT - A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO | 01-19-2012 |