| Patent application number | Description | Published |
|---|
| 20090023415 | SEMICONDUCTOR SWITCHING DEVICE - A semiconductor switching device includes, on one semiconductor substrate: a switching circuit configured to switch connection states between a plurality of terminals; a negative voltage generating circuit; and a control circuit connected to the switching circuit and the negative voltage generating circuit and configured to supply a control signal to the switching circuit, the control circuit including: a level shift circuit with a low-potential power supply terminal connected to the negative voltage generating circuit and an output node connected to the switching circuit, the level shift circuit being configured to supply a negative potential signal as a control signal at a low level to the switching circuit; a diode with its anode connected to the output node of the level shift circuit; and a transistor with its drain-source path connected between the cathode of the diode and ground, the drain-source path switching from a blocking state to a conducting state before the potential of the output node of the level shift circuit switches from a high level to the low level. | 01-22-2009 |
| 20090181630 | RADIO FREQUENCY SWITCH CIRCUIT - A radio frequency switch circuit includes: an antenna terminal; a first and second RF terminal; a first through transistor placed between the antenna terminal and the first RF terminal; a second through transistor placed between the antenna terminal and the second RF terminal; a first shunt transistor placed between ground and the first RF terminal; a second shunt transistor placed between the ground and the second RF terminal; and a distortion compensation circuit including a reverse parallel connected MOS capacitor whose capacitance around 0 volts has voltage dependence that is convex to the minus direction, the distortion compensation circuit being operable to compensate for voltage dependence of off-capacitance around 0 volts of the first and second through transistor and the first and second shunt transistor that is convex to the plus direction. Electrical connection between the antenna terminal and the first and second RF terminal is switchable. | 07-16-2009 |
| 20100073066 | RADIO-FREQUENCY SWITCH CIRCUIT - A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs. | 03-25-2010 |
| 20100237842 | SWITCHING CIRCUIT - A switching circuit includes: a switching section including at least one first terminal, a plurality of second terminals, and a switching element configured to connect the first terminal to one of the second terminals; a driver driving the switching element in accordance with an external terminal switching control signal; a DC-to-DC converter, which supplies electric power to the driver, having a first state with a response to a load transient and a second state with the response to a load transient being slower than the first state; and a power controller controlling the DC-to-DC converter to operate with the first state during a first time period corresponding to change in the external terminal switching control signal, and to operate with the second state during a second time period other than the first time period. | 09-23-2010 |
| 20110050288 | SEMICONDUCTOR SWITCH - A semiconductor switch includes: a first terminal; a second terminal; a switch section including a through FET connected between the first terminal and the second terminal and a shunt FET connected between the second terminal and a first ground terminal; a first control terminal configured to drive the through FET; a second control terminal configured to drive the shunt FET; and a driver provided on a substrate together with the switch section and configured to provide a differential output to the first control terminal and the second control terminal. | 03-03-2011 |
| 20110050323 | SEMICONDUCTOR SWITCH - A semiconductor switch includes: a switch section, provided on a substrate, switching connection states among a plurality of terminals; a positive voltage generator generating a positive potential higher than a supply potential supplied from a power-supply line; a driver, connected to an output line of the positive voltage generator, supplying a control signal to the switch section in response to a terminal switching signal; and a voltage controller, provided on the same substrate, controlling to connect the output line of the positive voltage generator to the power-supply line for a first period corresponding to a change in the connection states, and controlling to disconnect the output line from the power-supply line after the first period. | 03-03-2011 |
| 20110095806 | SEMICONDUCTOR SWITCH - According to one embodiment, a semiconductor switch includes a voltage generator, a driver, a switch section, and a power supply controller. The voltage generator is configured to generate a first potential and a negative second potential. The first potential is higher than a power supply voltage supplied to a power supply terminal. The driver is connected to an output of the voltage generator and includes a first level shifter and a second level shifter. The first level shifter is configured to output the first potential in response to input of high level and to output low level in response to input of low level. The second level shifter is configured to output the first potential in response to input of the first potential an output of the first level shifter and to output the second potential in response to input of low level of the output of the first level shifter. The switch section is configured to switch connection between terminals in response to an output of the driver. The power supply controller is configured to control the output of the voltage generator to be connected to the power supply terminal during a first period after supplying the power supply voltage to the power supply terminal and control the output of the voltage generator to be disconnected from the power supply terminal after expiration of the first period. | 04-28-2011 |
| 20110159822 | SEMICONDUCTOR SWITCH AND WIRELESS DEVICE - According to one embodiment, a semiconductor switch includes a voltage generator, a voltage controller, a driver, and a switch unit. The voltage generator generates a negative first potential. The voltage controller controls the first potential according to a terminal switch signal input from an outside. The driver is input the terminal switch signal, and outputs at least one selected from the first potential and the second potential based on the terminal switch signal. The second potential is a power supply voltage or is higher than the power supply voltage. The switch unit is provided on an SOT substrate, switches a connection between an anntena terminal and any one of high frequency terminals based on the output of the driver. | 06-30-2011 |
