Patent application number | Description | Published |
20090072371 | Methods And Articles Incorporating Local Stress For Performance Improvement Of Strained Semiconductor Devices - A packaged semiconductor device ( | 03-19-2009 |
20090292336 | NEURAL INTERFACE SYSTEMS AND METHODS - In one embodiment, a neural interface system includes an implantable neural probe having a flexible substrate, electrodes that extend from the substrate that are adapted to contact neural tissue of the brain, a signal processing circuit configured to process neural signals collected with the electrodes, and a wireless transmission circuit configured to wirelessly transmit the processed neural signals, and a backend computing device configured to wirelessly receive the processed neural signals, to process the received signals to reconstruct the collected neural signals, and to analyze the collected neural signals. | 11-26-2009 |
20090299166 | MEMS FLEXIBLE SUBSTRATE NEURAL PROBE AND METHOD OF FABRICATING SAME - A method of fabricating a MEMS flexible substrate neural probe is provided. The method can include applying an insulation layer on a substrate, and depositing a plurality of metal traces on the insulation layer and electroplating each of the plurality of traces. The method also can include encapsulating the insulation layer and metal traces deposited thereon with an insulation layer. Additionally the method can include etching the insulation layer to form a plurality bond pad sites and probes to form a flexible ribbon cable having a plurality of bond pad sites disposed on a surface of the flexible cable and a plurality of neural probes extending from the flexible cable. The method further can include separating the substrate from the insulation layer and depositing insulation on each of the neural probes, each probe comprising insulated portion and exposed metallic tip. Moreover, the method can include cutting each of the exposed metallic tips, and plating each of the exposed metallic tips and each of the plurality of bond pad sites. | 12-03-2009 |
20090318824 | NEURALPROBE AND METHODS FOR MANUFACTURING SAME - A neural probe and method of fabricating same are provided. The probe comprises a plurality of frames connected to each other and to a substrate by respective bimorphs. A probe base is connected by another bimorph to the frames. A probe tip extends from the probe base. The probe can achieve a large vertical motion and out-of-plane curling. The probe can operate according to three modes. The first mode pertains to a large-signal motion for tuning in single-unit neuronal activity. The second pertains to a small-signal motion with lock-in amplifier that increases SNR. The third pertains to burst small-signal motion for clearing tissue responses. Fabrication of a neural probe begins with a processed CMOS chip. Post-CMOS processing incorporates self-aligned selective nickel plating and sacrifices two aluminum layers. The fabrication technique produces a neural probe in which the sensing elements are in close proximity to CMOS circuitry. The fabrication technique obviates the need for post-CMOS masks, alignment, or assembly. | 12-24-2009 |
20100093559 | Microfluidic Array Device and System for Simultaneous Detection of Multiple Analytes - (A1+A3, B1−B3, C1−C3) Disclosed herein are microfluidic devices having an array of microfluidic valves and other components to meet the requirement of an antibody array for analyte detection. The microfluidic valves disclosed herein enable simultaneous detection of multiple analytes in a sample. One embodiment exemplified herein pertains to a microarray that is in the format of a sandwich assay, each of which comprises a capture antibody, analyte, and secondary detection antibody conjugated with a fluorescent dye or an enzyme or another moiety to facilitate detection. Methods of using microfluidic valves in an array for simultaneously detecting multiple analytes is also disclosed. | 04-15-2010 |
20110032512 | FLOATING-ELEMENT SHEAR-STRESS SENSOR - A shear-stress sensing system can include a floating element whose displacement can be detected through use of optical measurements. The system can utilize high temperature materials to deliver the optical signal to the structure to be measured, which can also utilize high temperature materials. In one embodiment, an intensity modulation or phase modulation of a reflected signal can be measured to determine the shear stress. In another embodiment, a Moire fringe pattern can be used to determine the shear stress. | 02-10-2011 |
20110215590 | Dual-Mode Piezoelectric/Magnetic Vibrational Energy Harvester - Embodiments of a vibrational energy harvester are provided. A vibrational energy harvester can include a translator layer sandwiched between two stator layers. The translator layer can include a plate having an array of magnets and two or more piezoelectric patches coupled to a tether beam attached to the plate. The stator layers can have a printed circuit board with multilayer electrical windings situated in a housing. In operation, vibration of the housing can result in bending of the piezoelectric patches coupled to the tether beam. This bending simultaneously results in a relative displacement of the translator, which causes a voltage potential in the piezoelectric patches, and a relative velocity between the translator and the stators, which induces a voltage potential in the stator coils. These voltage potentials generate an AC power, which can be converted to DC power through a rectification circuit incorporating passive and active conversion. | 09-08-2011 |
20120199812 | STRAIN TUNABLE SILICON AND GERMANIUM NANOWIRE OPTOELECTRONIC DEVICES - Silicon, silicon-germanium alloy, and germanium nanowire optoelectronic devices and methods for fabricating the same are provided. According to one embodiment, a P-I-N device is provided that includes a parallel array of intrinsic silicon, silicon-germanium or germanium nanowires located between a p+ contact and an n+ contact. In certain embodiments, the intrinsic silicon and germanium nanowires can be fabricated with diameters of less than 4.9 nm and 19 nm, respectively. In a further embodiment, vertically stacked silicon, silicon-germanium and germanium nanowires can be formed. | 08-09-2012 |
20130078742 | ENHANCEMENT OF PROPERTIES OF THIN FILM FERROELECTRIC MATERIALS - Methods are provided for enhancing properties, including polarization, of thin-film ferroelectric materials in electronic devices. According to one embodiment, a process for enhancing properties of ferroelectric material in a device having completed wafer processing includes applying mechanical stress to the device, independently controlling the temperature of the device to cycle the temperature from room temperature to at or near the Curie temperature of the ferroelectric material and back to room temperature while the device is applied with the mechanical stress, and then removing the mechanical stress. Certain of the subject methods can be performed as part of a back end of line (BEOL) process, and may be performed during the testing phase at wafer or die level. | 03-28-2013 |
20130293068 | ASYNCHRONOUS FLUIDIC IMPULSE STRAIN-BASED ENERGY HARVESTING SYSTEM - Energy harvesting systems and devices are provided that harvest energy from external asynchronous force impulses using fluidic force transfer of the external force impulses to a plurality of compliant piezoelectric layers that seal a corresponding plurality of inner cavities. Each inner cavity can contain a compressible gas. Direct fluidic force transfer can be accomplished via a compressible or incompressible fluid between an external cover and the compliant piezoelectric layers. | 11-07-2013 |