Patent application number | Description | Published |
20080230734 | ON-OFF VALVE AND PROCESS APPARATUS EMPLOYING THE ON-OFF VALVE - A disclosed on-off valve includes a valve body having two openings that may place a process chamber and an evacuation apparatus in pressure communication with each other; a closure element located inside the valve body and adapted to close one of the two openings; a seal member provided in the closure element and adapted to seal the one of the two openings when the closure element closes the one of the two openings; a linear motion driver that linearly moves the closure element; a retreat portion located away from the two openings; and a pivotal motion driver adapted to pivot the closure element between a first position corresponding to the one of the two openings and a second position corresponding to the retreat portion; wherein the closure element is moved to the retreat portion by the linear motion driver and the pivotal motion driver in order to stay at the retreat portion when the closure element is away from the one of the two openings. | 09-25-2008 |
20090074632 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector means. | 03-19-2009 |
20090169344 | Substrate processing apparatus and substrate processing method - A substrate processing apparatus | 07-02-2009 |
20100116789 | SUBSTRATE PROCESSING APPARATUS - When plasma processing is finished, a gate valve | 05-13-2010 |
20100178775 | SHOWER PLATE SINTERED INTEGRALLY WITH GAS RELEASE HOLE MEMBER AND METHOD FOR MANUFACTURING THE SAME - A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas. | 07-15-2010 |
20100216300 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×10 | 08-26-2010 |
20100252412 | PLASMA PROCESSING APPARATUS AND METHOD FOR ADJUSTING PLASMA DENSITY DISTRIBUTION - In the plasma processing apparatus | 10-07-2010 |
20100264115 | PLACING BED STRUCTURE, TREATING APPARATUS USING THE STRUCTURE, AND METHOD FOR USING THE APPARATUS - Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber. | 10-21-2010 |
20100279510 | ETCHING METHOD AND RECORDING MEDIUM - An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas. | 11-04-2010 |
20100279512 | PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA-PROCESSING SEMICONDUCTOR SUBSTRATE - A plasma processing apparatus includes an antenna unit for generating plasma by using microwaves as a plasma source in such a way that a first region having a relatively high electron temperature of plasma, and a second region having a lower electron temperature of plasma than the first region are formed in a chamber, a first arranging means for arranging a semiconductor substrate W in the first region, a second arranging means for arranging the semiconductor substrate in the second region, and a plasma generation stopping means for stopping the generation of plasma of a plasma generating means, while the semiconductor substrate is arranged in the second region. | 11-04-2010 |
20120174986 | METHOD OF OPERATING ON-OFF VALVE - A method of operating an on-off valve comprises closing one of two openings of a valve body with a seal member of a closure element within the valve body, the valve body being within an evacuation pipe connected between a process chamber and an evacuation apparatus; moving the closure element, using a linear driver, so that the seal member is moved away from the one of the two openings; and positioning the closure element into a retreat portion in an surface of the valve body, using the linear driver and a pivotal driver adapted to pivot the closure element between the one of the two openings and the retreat portion, so that the seal member is closed inside a protection seal member of the closure element to surround the seal member, thereby preventing the seal member from being directly exposed to the process gas. | 07-12-2012 |
20120204983 | PROCESSING DEVICE - A processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus having an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof, a mounting table provided within the processing chamber for holding the target object, a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port, and a gas exhaust system connected to the pressure control valve. The pressure control valve is arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve. | 08-16-2012 |
20130065399 | PLASMA PROCESSING METHOD - A plasma processing method includes holding a wafer on a holding stage, generating plasma inside the processing chamber by a plasma generator to define a first processing region having an electron temperature higher than a predetermined value and a second processing region having an electron temperature lower than the predetermined value, moving the holding stage for the wafer to be positioned in the first processing region, performing the plasma processing of the wafer positioned in the first processing region, moving the holding stage for the wafer to be positioned in the second processing region, and stopping to generate plasma when the wafer is positioned in the second processing region after completion of the plasma processing. | 03-14-2013 |
20130292047 | MANUFACTURING METHOD OF TOP PLATE OF PLASMA PROCESSING APPARATUS - A manufacturing method of a top plate hermetically attached to an upper opening of a tubular shaped container body for forming a processing container of a plasma processing apparatus is provided. The manufacturing method includes the steps of; preparing a top plate body comprised of a dielectric body for transmitting an electromagnetic wave, and having a gas ejection hole for ejecting a gas into the processing container; forming a discharge prevention member having a discharge prevention member body comprised of a dielectric body having a permeability, and a dense member comprised of a dielectric body without a permeability covering at least a side face of the discharge prevention member body; and attaching the discharge prevention member in the gas ejection hole of the top plate body. | 11-07-2013 |