Patent application number | Description | Published |
20080258154 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND DISPLAY DEVICE - Disclosed herein is a semiconductor device manufacturing method for performing an annealing process of irradiating a semiconductor film on which element forming areas including thin film transistor forming areas are arranged in a two-dimensional pattern with energy beams using a plurality of irradiating optical systems, wherein in the annealing process, an area irradiated with the energy beams is divided into a single beam irradiated area irradiated by each of the plurality of irradiating optical systems with an energy beam singly and a boundary area situated between single beam irradiated areas adjacent to each other and irradiated by both of two irradiating optical systems performing beam irradiation of the single beam irradiated areas with energy beams. | 10-23-2008 |
20080283842 | METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD - A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer. | 11-20-2008 |
20080315199 | THIN FILM TRANSISTOR MANUFACTURING METHOD, THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME - A thin film transistor manufacturing method includes the steps of: forming a gate electrode, gate insulating film and amorphous silicon film in succession on an insulating substrate; forming a channel protective film only in the region which will serve as a channel region of the amorphous silicon film; and forming an n-plus silicon film and metal layer on top of the channel protective film and amorphous silicon film in succession. The method further includes the step of patterning the amorphous silicon film and n-plus silicon film to selectively leave the region associated with source and drain electrodes, using the channel protective film as an etching stopper to selectively remove the region of the n-plus silicon film and metal layer associated with the channel region so as to form source and drain regions from the n-plus silicon film and also form source and drain electrodes from the metal layer. | 12-25-2008 |
20090302757 | METHOD OF MANUFACTURING DISPLAY UNIT AND DISPLAY UNIT - A method of manufacturing a display unit and a display unit capable of decreasing particles caused by a sputtering target of an oxide electric conductor and obtaining favorable electric conductive characteristics between a metal and the oxide electric conductor in the case where a first electrode has a laminated structure including the metal and the oxide electric conductor are provided. The method of manufacturing a display unit having a display layer between a first electrode and a second electrode, wherein a step of forming the first electrode includes the steps of: forming a laminated structure sequentially including a first layer made of a metal and a second layer made of a metal whose oxide exhibits electric conductivity over a substrate; and providing surface oxidation treatment after forming the laminated structure and thereby forming an oxide electric conductor film in at least part in a thickness direction of the second layer. | 12-10-2009 |
20100038646 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region. | 02-18-2010 |
20100044709 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - A thin film transistor is formed by laminating a gate electrode | 02-25-2010 |
20100109004 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE - The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order. | 05-06-2010 |
20100133525 | THIN FILM TRANSISTOR, DISPLAY UNIT, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR - A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective layer that is formed at least in a region corresponding to the channel region on the gate insulating film and the oxide semiconductor thin film layer, and that includes a first channel protective layer on a lower layer side and a second channel protective layer on an upper layer side; and a source/drain electrode that is formed on the channel protective layer and is electrically connected to the oxide semiconductor thin film layer. The first channel protective layer is made of an oxide insulating material, and one or both of the first channel protective layer and the second channel protective layer is made of a low oxygen permeable material. | 06-03-2010 |
20100200843 | THIN FILM TRANSISTOR AND DISPLAY UNIT - A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same are provided. The thin film transistor includes sequentially over a substrate a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer. | 08-12-2010 |
20110095288 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - There is provided a thin film transistor capable of suppressing generation of a leak current in an oxide semiconductor film. A thin film transistor | 04-28-2011 |
20110133666 | DISPLAY, METHOD OF MANUFACTURING DISPLAY AND ELECTRONIC DEVICE - A display including a light-emitting element is provided. The light-emitting element includes a lower display electrode, an organic layer including a light-emitting layer, and an upper display electrode, wherein the lower display electrode is formed in a source-drain electrode layer or a gate electrode layer. A method of manufacture and an electronic device including the display are also provided. | 06-09-2011 |
20110180802 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film | 07-28-2011 |
20110186853 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT - A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method. | 08-04-2011 |
20110198600 | METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD - A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized. | 08-18-2011 |
20110215328 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR, AND DISPLAY DEVICE - There is provided a thin film transistor, which has a uniform and good electric characteristic and has a simple configuration allowing decrease in number of manufacturing steps, and a method of manufacturing the thin film transistor, and a display device having the thin film transistor. The thin film transistor includes: a gate electrode; an oxide semiconductor film having a multilayer structure of an amorphous film and a crystallized film; and a source electrode and a drain electrode provided to contact the crystallized film. | 09-08-2011 |
20110309876 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer. | 12-22-2011 |
20120043548 | THIN FILM TRANSISTOR AND DISPLAY UNIT - A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer. | 02-23-2012 |
20120205657 | METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD - A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized. | 08-16-2012 |
20120205660 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region. | 08-16-2012 |
20120211755 | THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND DISPLAY - Disclosed herein is a manufacturing method of a thin film transistor including: forming a channel layer made of an oxide semiconductor above a gate electrode with a gate insulating film provided therebetween, forming a channel protection film made of a conductive material adapted to cover the channel layer and forming a pair of source and drain electrodes in such a manner as to be in contact with the channel protection film; and removing the region of the channel protection film between the source/drain electrodes by etching relying on selectivity between the conductive material and crystalline oxide semiconductor. | 08-23-2012 |
20120228623 | DISPLAY DEVICE AND ELECTRONIC DEVICE - Disclosed herein is a display device including: a thin film transistor; and a wiring layer; wherein the thin film transistor includes a semiconductor layer, a gate electrode disposed so as to be opposed to the semiconductor layer, the gate electrode being different in thickness from the wiring layer, and a gate insulating film between the semiconductor layer and the gate electrode. | 09-13-2012 |
20120249503 | DISPLAY AND ELECTRONIC DEVICE - A display capable of reducing an electric effect of a color filter on a pixel circuit, and thereby suppressing degradation in display quality is provided. The display includes a pixel drive substrate having a color filter, a display function layer provided on the pixel drive substrate, a first electrode and a second electrode to supply a drive voltage to the display function layer, and a third electrode disposed to face the color filter. | 10-04-2012 |
20120256182 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A thin film transistor having a crystalline silicon film that is formed by irradiating an amorphous silicon film with a light beam through a photothermal conversion layer and an insulating film to provide the amorphous silicon film with heat treatment. | 10-11-2012 |
20120267633 | METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD - A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized. | 10-25-2012 |
20120280241 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE - A thin film transistor substrate with reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order. | 11-08-2012 |
20120327498 | DISPLAY AND ELECTRONIC UNIT - There are provided a display and an electronic unit capable of enhancing visibility. The display includes: a plurality of pixels each including a light-emission device, and having a light-transmission region in at least a part thereof; and one or more transmittance control devices capable of controlling a transmittance of incident light. | 12-27-2012 |
20130087795 | DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC UNIT - A display device includes: a thin film transistor; and a wiring layer; the thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode made of a light transmissive material and electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material, the second electrode being electrically connected to each of the semiconductor layer and the wiring layer, wherein a difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material. | 04-11-2013 |
20130089940 | METHOD OF MANUFACTURING DISPLAY UNIT - A method of manufacturing a display unit includes: forming, on a substrate, a thin-film transistor having an oxide semiconductor layer; and forming, above the thin-film transistor, a display region that includes a plurality of display elements. The oxide semiconductor layer is formed using a sputtering method in which a target and the substrate are opposed to each other. The target is made of an oxide semiconductor and includes a plurality of divided portions that are jointed in a planar form. A spacing interval between two joints that are formed by the plurality of divided portions and are side-by-side with one another of the target is equal to or less than a width of a luminance distribution arising in the display region in a direction substantially orthogonal to the joints. | 04-11-2013 |
20130153893 | DISPLAY AND ELECTRONIC UNIT - A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region. | 06-20-2013 |
20130200364 | THIN-FILM TRANSISTOR, DISPLAY UNIT, AND ELECTRONIC APPARATUS - A thin-film transistor includes: a gate electrode; a gate insulating film disposed on the gate electrode; an oxide semiconductor layer disposed on the gate insulating film and having a channel region located to face the gate electrode; a channel protective layer disposed on the gate insulating film and the oxide semiconductor layer; and source and drain electrodes each connected to the oxide semiconductor layer through a connection hole formed in the channel protective layer, in which the oxide semiconductor layer has, in a part of the channel region, a narrow region with a narrower width than a width of the connection hole. | 08-08-2013 |
20130240878 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor comprising: a substrate; a gate electrode on the substrate; a gate insulation film on the gate electrode; an oxide semiconductor layer on the gate insulation film; a channel protection film on the oxide semiconductor layer; source and drain electrodes on the channel protection film; and a passivation film on the source and drain electrodes, wherein, (a) each of the gate insulation film, and passivation film comprises a laminated structure and includes a first layer made of aluminum oxide and a second layer made of an insulation material including silicon, and (b) the passivation film covers edges of the oxide semiconductor layer. The transistor is capable of suppressing desorption of oxygen and from the oxide semiconductor layer and reducing the time for film formation thereof. | 09-19-2013 |
20130270566 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer. | 10-17-2013 |
20140077171 | ORGANIC ELECTROLUMINESCENCE DISPLAY UNIT, METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DISPLAY UNIT, AND COLOR FILTER SUBSTRATE - A display device includes a first electrode, an organic layer including a light emitting region, and a second electrode. The display device also includes a conductive layer electrically connected to the second electrode and including an opening corresponding to the light emitting region. | 03-20-2014 |
20140124781 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT - A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method. | 05-08-2014 |
20150060851 | DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC UNIT - A display device includes a thin film transistor and a wiring layer. The thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material. The second electrode is electrically connected to each of the semiconductor layer and the wiring layer. A difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material. | 03-05-2015 |
20150076481 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A display device and method for manufacturing same are provided. The display device including a plurality of unit pixels disposed in the matrix on a substrate, each of the unit pixels has a thin film transistor at a place other than the center of the pixel, and unit pixels in a first row and unit pixels in a second row adjacent to the first row are arranged so that they are symmetric with respect to a first virtual plane orthogonal to a main surface of the substrate. | 03-19-2015 |