Patent application number | Description | Published |
20100248146 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME - A positive resist composition comprising (A) a resin which contains all of the repeating units represented by formulae (I) to (III), and becomes soluble in an alkali developer by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and a pattern forming method using the composition. A represents a group capable of decomposing and leaving by the action of an acid, each R | 09-30-2010 |
20110159433 | PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION - Provided are a radiation-sensitive composition including a compound (P) having a partial structure (A) having an ionic structural site and capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid and a partial structure (B) having at least one phenolic hydroxyl group, a part or all of hydrogen atoms of the hydroxyl group or groups each being protected by a group capable of leaving by the action of an acid, wherein the ionic structural site of the partial structure (A) contained in the compound (P) is a structure capable of generating an acid anion in the compound (P) upon irradiation with an actinic ray or radiation; a pattern-forming method using the same; and a resin which is used in the composition. | 06-30-2011 |
20110287234 | NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN - A resist pattern forming method including in the following order, (1) a step of forming a film by using a negative chemical-amplification resist composition capable of undergoing negative conversion by a crosslinking reaction, (2) a step of exposing the film, and (4) a step of developing the exposed film by using a developer containing an organic solvent; a developer and a negative chemical-amplification resist composition used therefor; and a resist pattern formed by the pattern forming method. | 11-24-2011 |
20110300485 | ORGANIC SOLVENT DEVELOPMENT OR MULTIPLE DEVELOPMENT PATTERN-FORMING METHOD USING ELECTRON BEAMS OR EUV RAYS - Provided is a pattern-forming method including, in the following order: (1) a process of forming a film with an actinic ray-sensitive or radiation-sensitive resin composition comprising a resin which contains an acid-decomposable repeating unit and is capable of decreasing the solubility in an organic solvent by the action of an acid; (2) a process of exposing the film with an electron beam or an EUV ray; and (4) a process of developing the film with a developer containing an organic solvent. | 12-08-2011 |
20120003585 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION - According to one embodiment, an actinic-ray- or radiation-sensitive resin composition comprises (A) any of the compounds of General Formula (I) below and (B) a resin that contains the residue (c) of a compound having an ionization potential value lower than that of phenol and when acted on by an acid, exhibits an increased solubility in an alkali developer, | 01-05-2012 |
20120321855 | PATTERN FORMING METHOD AND RESIST COMPOSITION - Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent. | 12-20-2012 |
20130017377 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAMEAANM Kataoka; ShoheiAACI ShizuokaAACO JPAAGP Kataoka; Shohei Shizuoka JPAANM Iwato; KaoruAACI ShizuokaAACO JPAAGP Iwato; Kaoru Shizuoka JPAANM Kamimura; SouAACI ShizuokaAACO JPAAGP Kamimura; Sou Shizuoka JPAANM Tsuchihashi; ToruAACI ShizuokaAACO JPAAGP Tsuchihashi; Toru Shizuoka JPAANM Enomoto; YuichiroAACI ShizuokaAACO JPAAGP Enomoto; Yuichiro Shizuoka JPAANM Fujii; KanaAACI ShizuokaAACO JPAAGP Fujii; Kana Shizuoka JPAANM Mizutani; KazuyoshiAACI ShizuokaAACO JPAAGP Mizutani; Kazuyoshi Shizuoka JPAANM Tarutani; ShinjiAACI ShizuokaAACO JPAAGP Tarutani; Shinji Shizuoka JPAANM Kato; KeitaAACI ShizuokaAACO JPAAGP Kato; Keita Shizuoka JP - Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧1.5 when exposed to actinic rays or radiation. | 01-17-2013 |
20130045440 | RESIST PATTERN FORMING METHOD, RESIST PATTERN, CROSSLINKING NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT, NANOIMPRINT MOLD, AND PHOTOMASK - A resist pattern forming method contains, in order: (1) a step of forming a resist film by using a negative chemical-amplification resist composition containing: (A) polymer compound having a repeating unit represented by the specific formula, (B) a phenolic compound being capable of crosslinking the polymer compound (A) by the action of an acid and having two or more benzene rings and four or more alkoxymethyl groups, and (C) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (2) a step of exposing the film, and (4) a step of, after exposure, developing the film by using a developer containing an ester-based solvent having a carbon number of 7 or 8. | 02-21-2013 |
20130052567 | RESIST PATTERN FORMING METHOD, RESIST PATTERN, CROSSLINKABLE NEGATIVE RESIST COMPOSITION, NANOIMPRINT MOLD AND PHOTOMASK - A resist pattern forming method includes: in the following order, (1) a step of forming a film on a substrate by using a negative resist composition capable of undergoing negative conversion by a crosslinking reaction; (2) a step of exposing the film; and (4) a step of performing development by using an alkali developer after the exposing, wherein the negative resist composition contains (A) a polymer compound having a repeating unit represented by the following formula (I) as defined in the specification, a thickness of the film formed in the step (1) is from 15 to 40 nm, and an alkali component concentration in the alkali developer is from 0.5 to 1.1 mass %. | 02-28-2013 |
20130052568 | RESIST PATTERN FORMING METHOD, RESIST PATTERN, POSITIVE RESIST COMPOSITION, NANOIMPRINT MOLD AND PHOTOMASK - A resist pattern forming method includes: in the following order, (1) a step of forming a film on a substrate by using a positive resist composition; (2) a step of exposing the film; and (4) a step of performing development by using an alkali developer after the exposing, wherein the positive resist composition contains (A) a polymer compound having a repeating unit represented by the following formula (I) as defined in the specification, a thickness of the film formed in the step (1) is from 15 to 40 nm, and an alkali component concentration in the alkali developer is from 0.5 to 1.1 mass %. | 02-28-2013 |