Patent application number | Description | Published |
20080251849 | Semiconductor Device and Method for Manufacturing Same - A semiconductor device comprising a first semiconductor region and a second semiconductor region,
| 10-16-2008 |
20090170252 | Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer - A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer. | 07-02-2009 |
20100084713 | Semiconductor device manufacturing method and semiconductor device - A second mask is provided so as to cover a second gate pattern and a first gate pattern is heated to a temperature at which a material gas containing a first metal thermally decomposes, polysilicon constituting the first gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the first gate pattern is turned into a first gate electrode constituted by a silicide of the first metal. After the second mask is removed, a first mask is provided so as to cover the first electrode and the second gate pattern is heated to a temperature at which the material gas thermally decomposes, polysilicon constituting the second gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the second gate pattern is turned into a second gate electrode constituted by the silicide of the first metal. Then, the first mask is removed. With such a manufacturing method, a silicide layer is formed without adding an annealing process. | 04-08-2010 |
20100221885 | METHOD OF MANUFACTURING DIELECTRIC FILM - The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher. | 09-02-2010 |
20100244192 | DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM - The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film ( | 09-30-2010 |
20100320520 | DIELECTRIC, CAPACITOR USING DIELECTRIC, SEMICONDUCTOR DEVICE USING DIELECTRIC, AND MANUFACTURING METHOD OF DIELECTRIC - To make it possible to significantly suppress the leakage current in a semiconductor device having a capacitor structure using a dielectric film. There is provided a composite oxide dielectric which is mainly composed of Zr, Al and O, and which has a composition ratio of Zr and Al in a range of (1−x):x where 0.01≦x≦0.15, and has a crystal structure. When the dielectric is set to have the Al composition in the above described range and is crystallized, the relative dielectric constant of the dielectric can be significantly increased. When the dielectric is used as a dielectric film of a capacitor of a semiconductor device, the leakage current of the capacitor can be significantly reduced. | 12-23-2010 |
20100330813 | DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM - The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film ( | 12-30-2010 |
20110012221 | SiGe PHOTODIODE - The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith. | 01-20-2011 |
20110027979 | DIELECTRIC FILM, METHOD OF MANUFACUTRING SEMICONDUCTOR DEVICE USING DIELECTRIC FILM, AND SEMICONDUCTOR MANUFACTURING APPARATUS - To provide a method of manufacturing a dielectric film having a high dielectric constant. In an embodiment of the present invention, an HfN/Hf laminated film is formed on a substrate on which a thin silicon oxide film is formed and a dielectric film of a metal nitride made of a mixture of Hf, Si, O and N is manufactured by annealing treatment. According to the present invention, it is possible to (1) reduce an EOT, (2) reduce a leak current to Jg=1.0×10 | 02-03-2011 |
20110064642 | DIELECTRIC FILM WITH METALLIC OXYNITRIDE - The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/(A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher. | 03-17-2011 |
20120021612 | METHODS FOR MANUFACTURING DIELECTRIC FILMS - A method for manufacturing a dielectric film having a high dielectric constant is provided. | 01-26-2012 |