Toru Sugiyama
Toru Sugiyama, Zaventem BE
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20100233586 | TUBE-TYPE FUEL CELL - It is an assignment to provide a fuel cell whose battery performance is high, whose gas sealing performance of fuel gas and oxidizing-agent gas can be improved by means of an opposite-end construction of a single cell | 09-16-2010 |
Toru Sugiyama, Osaka JP
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20100221133 | SCREW COMPRESSOR - A compression mechanism is provided with a first relief port opening only to a first compression chamber, a second relief port opening only to a second compression chamber, and a third relief port which can open to both of the first compression chamber and the second compression chamber. | 09-02-2010 |
Toru Sugiyama, Tokyo JP
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20100093181 | PURGE STEP-CONTROLLED SEQUENCE OF PROCESSING SEMICONDUCTOR WAFERS - A method of processing semiconductor substrates includes: depositing a film on a substrate in a reaction chamber; evacuating the reaction chamber without purging the reaction chamber; opening a gate valve and replacing the substrate with a next substrate via the transfer chamber wherein the pressure of the transfer chamber is controlled to be higher than that of the reaction chamber before and while the gate valve is opened; repeating the above steps and removing the substrate from the reaction chamber; and purging and evacuating the reaction chamber, and cleaning the reaction chamber with a cleaning gas. | 04-15-2010 |
20120241751 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes. | 09-27-2012 |
Toru Sugiyama, Abiko-Shi JP
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20090260463 | ELECTRIC ACTUATOR - In an electric actuator, a connector is coupled to one end of a screw shaft that makes up a displacement mechanism, the screw shaft being rotatably supported by first and second bearings. Further, on the other end of the screw shaft, a support ring is disposed through a holder, wherein the support ring is slidable along an inner circumferential surface of a piston rod. On the outer circumferential surface of a piston, a rotation-stopping member is provided, which includes projections thereon that project in a radial direction from the outer circumferential surface, the projections being inserted into grooves of said body. | 10-22-2009 |
20090270220 | AUTOMATIC SPEED REDUCTION RATIO SWITCHING APPARATUS - An automatic speed reduction ratio switching apparatus is equipped with a sun gear connected to an input shaft, first and second carriers connected to a feed screw shaft, planetary gears meshed with the sun gear and which are mounted rotatably in the first and second carriers, and an internal gear meshed with the planetary gears and which is capable of movement in an axial direction. A packing member is arranged between the internal gear and the second carrier, for regulating movement in the axial direction of the internal gear, while enabling movement of the internal gear in the axial direction when a thrust force is applied at or above a predetermined value. | 10-29-2009 |
20100043583 | BALL SCREW MECHANISM - A ball screw mechanism is equipped with a ball screw shaft formed from a metallic material, a displacement nut inserted over an outer circumferential side of the ball screw shaft, steel balls installed between a first screw groove formed on the ball screw shaft and a second screw groove formed in the displacement nut, and a pair of first and second return members, through which the steel balls are circulated between one end side and another end side of the displacement nut. The first and second return members include main body parts mounted respectively onto one end and another end of the displacement nut, and cylindrical parts that project outwardly with respect to the main body parts. A return passage, through which the steel balls are circulated, is formed inside of the main body parts and the cylindrical parts. | 02-25-2010 |
20110113955 | ACTUATOR - An actuator is equipped with a cylinder body in the interior of which a piston is disposed for displacement therein. A piston rod connected to the piston projects outwardly to the exterior from an end of the cylinder body. A guide unit, having a guide body that is attached to the cylinder body, and a pair of guide rods, which are disposed displaceably with respect to the guide body, are disposed detachably on the cylinder body. Additionally, by mutually interconnecting the guide rods of the guide unit and the piston rod through a connecting plate, when the piston rod is displaced in an axial direction, the piston rod is guided by the pair of guide rods. | 05-19-2011 |
20110174100 | FEED SCREW MECHANISM - A feed screw mechanism includes a feed screw shaft connected to a drive source and formed with first screw threads on an outer circumferential surface thereof, and a displacement nut, which is screw-engaged with respect to the feed screw shaft through a plurality of balls. The displacement nut is supported with respect to a slider that makes up an electric actuator by a pair of pins. The pins are inserted and fixed in first pin holes formed in the slider, and distal end portions of the pins are inserted respectively into second pin holes formed in the displacement nut. | 07-21-2011 |
Toru Sugiyama, Aichi JP
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20080274392 | Method and Apparatus for Producing Catalyst Layer for Fuel Cell - A method for manufacturing a catalyst layer for a fuel cell support for a catalyst layer comprises the steps of vapor-growing a carbonaceous porous material having a nano-size structure, such as carbon nanowalls (CNWs), and supporting and dispersing a catalyst component and/or an electrolyte component on the support for a catalyst layer. The method simplifies the process for manufacturing an electrode layer for fuel cells and improves the dispersibility of the catalyst component and the electrolyte, whereby the generation efficiency of a fuel cell can be improved. | 11-06-2008 |
20090130523 | Tubular Solid Polymer Fuel Cell Comprising a Rod-Shaped Current Collector With Peripheral Glas Flow Channels and Production Method Thereof - There is provided a tubular fuel cell in which a catalyst ink does not penetrate into a gas flow channel at the time of preparing a catalyst layer, and hence does not block the flow channel and thereby improves the electric power generation performance as well as the gals flow property, and there is also provided a production method of the tubular fuel cell. A tubular solid polymer fuel cell including a fuel gas flow channel | 05-21-2009 |
20100009242 | CARBON NANOWALL WITH CONTROLLED STRUCTURE AND METHOD FOR CONTROLLING CARBON NANOWALL STRUCTURE - Provided is a method for controlling a carbon nanowall (CNW) structure having improved corrosion resistance against high potential by varying the spacing between the carbon nanowall (CNW) walls so that its surface area and crystallinity are controlled. Also provided is a carbon nanowall (CNW) with a high surface arca and a carbon nanowall (CNW) with a high crystallinity, both of which have a controlled structure. According to the present invention, provided are: (1) a carbon nanowall, characterized by having a wall surface area of 50 cm | 01-14-2010 |
Toru Sugiyama, Nishikamo-Gun JP
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20090042087 | Fuel Cell Separator, Electrode Structure for a Fuel Cell, Methods of Manufacturing Both Thereof, and a Polymer Electrolyte Fuel Cell Comprising the Same - The degree of freedom in the shape of channels in a separator is increased, enabling an optimum gas channel to be designed, enabling a sufficient supply of gas below gas channel ribs, and improving cell performance through the reduction in diffusion polarization. Drainage property is also improved and flooding is prevented, thereby reducing diffusion polarization and improving cell performance. Cell performance is also improved through the reduction of contact resistance. A fuel cell separator comprises a separator substrate on which gas channel ribs are formed through vapor-phase growth of a carbon-based porous material with a nanosize structure. An electrode structure for a fuel cell, methods of manufacturing the separator and the fuel cell, and a solid polymer fuel cell comprising the electrode structure. | 02-12-2009 |
Toru Sugiyama, Aichi-Ken JP
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20110139353 | METHOD AND APPARATUS FOR JOINING RESIN AND METAL - A joining method for joining a resin member and a metal member by heating is provided. Joining of the resin member and metal member is performed by heating a joining interface of the resin member and metal member to a temperature in a range of equal to or higher than a decomposition temperature of the resin member and lower than a temperature at which gas bubbles are generated in the resin member and by cooling a surface of the resin member on the opposite side from a joining surface thereof with the metal member to a temperature that is lower than the melting point of the resin member. | 06-16-2011 |
20150210051 | METHOD AND APPARATUS FOR JOINING RESIN AND METAL - A joining method for joining a resin member and a metal member by heating is provided. Joining of the resin member and metal member is performed by heating a joining interface of the resin member and metal member to a temperature in a range of equal to or higher than a decomposition temperature of the resin member and lower than a temperature at which gas bubbles are generated in the resin member and by cooling a surface of the resin member on the opposite side from a joining surface thereof with the metal member to a temperature that is lower than the melting point of the resin member. | 07-30-2015 |
Toru Sugiyama, Musashino-Shi JP
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20120241762 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a first region of a second conductivity type selectively provided in a first major surface of the semiconductor layer, a second region of the second conductivity type selectively provided in the first major surface and connected to the first region, a first electrode provided in contact with the semiconductor layer and the first region, a second electrode provided in contact with the second region, and a third electrode electrically connected to a second major surface of the semiconductor layer opposite to the first major surface. | 09-27-2012 |
Toru Sugiyama, Matsuyama-Shi JP
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20130344282 | Shaped Product Constituted by Fiber-Reinforced Composite Material - The present invention relates to a shaped product being excellent in isotropy constituted by a fiber-reinforced composite material in which discontinuous reinforcing fibers are isotropic in a plane and are two-dimensionally oriented in the thermoplastic resin, the reinforcing fibers contained in the shaped product includes a reinforcing fiber bundle (A) constituted by the reinforcing fibers of the critical single fiber number defined by formula (1) or more, a ratio of the reinforcing fiber bundle (A) to the total amount of the reinforcing fibers in the shaped product is 20 vol % or more and less than 90 vol %, and the average number (N) of the reinforcing fibers in the reinforcing fiber bundle (A) satisfies formula (2): | 12-26-2013 |
20140004308 | Molded Product Having Thickness Gradient, and Method for Manufacturing the Same | 01-02-2014 |
20140178631 | Shaped Product Having Standing Plane, and Method for Manufacturing the Same - There is provided a shaped product made of a fiber-reinforced composite material including reinforcing fibers having an average fiber length of 5 to 100 mm and a thermoplastic resin. In the shaped product, a volume fraction of reinforcing fibers is 5 to 80%, a reference plane (S) and a standing plane (B) inclined at an angle of 45 to 90 degrees with respect to the reference plane are included, a ratio of an area of the standing plane (B) to an area of the reference plane (S) is 0.5 to 100, and in the fiber-reinforced composite material constituting the shaped product, a ratio of a reinforcing fiber bundle (A) including the reinforcing fibers of a critical number of single fiber or more to the total amount of the reinforcing fibers is 20 Vol % or more and 99 Vol % or less. | 06-26-2014 |
20140186584 | Shaped Product Made of Fiber-Reinforced Composite Material and Having Excellent Surface Appearance - There is provided a shaped product made of a fiber-reinforced composite material including reinforcing fibers having an average length of 5 mm or more and 100 mm or less and a thermoplastic resin, in which a volume fraction of reinforcing fibers (Vf=100×volume of reinforcing fibers/(volume of reinforcing fibers+volume of thermoplastic resin)) is 5 to 80%, grains are formed on a surface of the shaped product, and a ratio of a reinforcing fiber bundle (A) including the reinforcing fibers of a critical number of single fiber or more, the critical number defined by Formula (1), to the total amount of the reinforcing fibers is 20 Vol % or more and 99 Vol % or less: | 07-03-2014 |
Toru Sugiyama, Ishikawa JP
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20140284613 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment includes a nitride semiconductor layer, a gate electrode provided above the nitride semiconductor layer, a source electrode provided above the nitride semiconductor layer, a drain electrode provided above the nitride semiconductor layer at a side opposite to the source electrode with respect to the gate electrode, a first silicon nitride film provided above the nitride semiconductor layer between the drain electrode and the gate electrode, and a second silicon nitride film provided between the nitride semiconductor layer and the gate electrode, an atomic ratio of silicon to nitrogen in the second silicon nitride film being lower than an atomic ratio of silicon to nitrogen in the first silicon nitride film. | 09-25-2014 |
20150069405 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to one embodiment includes an n-type first GaN-based semiconductor layer, a p-type second GaN-based semiconductor layer on the first GaN-based semiconductor layer. The second GaN-based semiconductor layer includes a low impurity concentration region and a high impurity concentration region. An n-type third GaN-based semiconductor layer is provided on the second GaN-based semiconductor layer. The device includes a gate electrode being located adjacent to the third GaN-based semiconductor layer, the low impurity concentration region, and the first GaN-based semiconductor layer intervening a gate insulating film. The device includes a first electrode on the third GaN-based semiconductor layer, a second electrode on the high impurity concentration region, and a third electrode on the opposite side of the first GaN-based semiconductor layer from the second GaN-based semiconductor layer. | 03-12-2015 |
20160027909 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to one embodiment includes an n-type first GaN-based semiconductor layer, a p-type second GaN-based semiconductor layer on the first GaN-based semiconductor layer. The second GaN-based semiconductor layer includes a low impurity concentration region and a high impurity concentration region. An n-type third GaN-based semiconductor layer is provided on the second GaN-based semiconductor layer. The device includes a gate electrode being located adjacent to the third GaN-based semiconductor layer, the low impurity concentration region, and the first GaN-based semiconductor layer intervening a gate insulating film. The device includes a first electrode on the third GaN-based semiconductor layer, a second electrode on the high impurity concentration region, and a third electrode on the opposite side of the first GaN-based semiconductor layer from the second GaN-based semiconductor layer. | 01-28-2016 |
Toru Sugiyama, Musashino Tokyo JP
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20150123141 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes. | 05-07-2015 |
Toru Sugiyama, Nagakute-Shi JP
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20150183058 | WELDING DEVICE, WELDING METHOD, AND METHOD FOR PRODUCING BATTERY (AS AMENDED) - Disclosed is a technique on laser welding capable of achieving a desired penetration depth without an oxide film remaining in a deep portion of a molten pool. In a welding device ( | 07-02-2015 |
Toru Sugiyama, Hyogo JP
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20160056327 | NITRIDE LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - Provided is a nitride light emitting element which achieves a high light extraction efficiency even at a low operation voltage and which can be manufactured by means of a simple process. A nitride light emitting element | 02-25-2016 |
Toru Sugiyama, Utsunomiya-Shi JP
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20160131982 | MEASUREMENT APPARATUS, LITHOGRAPHY APPARATUS, AND METHOD OF MANUFACTURING ARTICLE - The present invention provides a measurement apparatus for measuring a position of a mark formed on a substrate, the apparatus including a detector configured to detect the mark to generate a detection signal, and a processor configured to process the generated detection signal to obtain a position of the mark, wherein the processor is configured to limit a range of the detection signal to be processed to obtain the position of the mark based on a statistic representing dispersion of a plurality of the position obtained with respect to a plurality of the mark. | 05-12-2016 |