Patent application number | Description | Published |
20100220228 | SOLID-STATE IMAGE SENSOR - A solid-state image sensor includes: a semiconductor substrate | 09-02-2010 |
20100327332 | SOLID STATE IMAGING DEVICE - A solid state imaging device having a pixel area in which a plurality of light receiving elements are arranged, and a peripheral circuit area adjacent to the pixel area includes: a semiconductor substrate | 12-30-2010 |
20110284929 | SOLID STATE IMAGING DEVICE - In each of pixels | 11-24-2011 |
20110291162 | SOLID STATE IMAGING DEVICE - Each of pixels | 12-01-2011 |
20120211851 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer. | 08-23-2012 |
20120217494 | SOLID-STATE IMAGING DEVICE - Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed. | 08-30-2012 |
20130075591 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to the present invention includes pixels which are arranged two-dimensionally and each of which includes: a light absorbing layer that converts light into signal charges; a signal read circuit to read out the signal charges, the signal read circuit being formed on a side opposite to a light incident plane side of the light absorbing layer; a metal layer that is formed on the light incident plane side of the light absorbing layer, the metal layer having an aperture to transmit, into the light absorbing layer, light of a wavelength range depending on a shape of the aperture, a driving circuit that applies a voltage to the metal layer to generate, in the light absorbing layer, a potential gradient to collect the signal charges. | 03-28-2013 |
20130134536 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SOLID-STATE IMAGING DEVICE - A solid-state imaging device in which a plurality of pixels are two-dimensionally arranged, the solid-state imaging device includes: a silicon layer; a plurality of photodiodes which are formed in the silicon layer to correspond to the pixels and generate signal charges by performing photoelectric conversion on incident light; and a plurality of color filters formed above the silicon layer to correspond to the plurality of the pixels, wherein a protrusion is formed in a region on a side of the silicon layer between adjacent ones of the color filters, the protrusion having a refractive index lower than refractive indices of the adjacent ones of the color filters and, each of the color filters is in contact with the adjacent ones of the color filters, above the protrusion. | 05-30-2013 |
20140054737 | SOLID-STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME - A solid-state imaging device includes: a substrate; an insulator layer formed on the substrate; a semiconductor layer formed on the insulator layer; and a silicon layer formed on the semiconductor layer. The silicon layer includes a plurality of pixels each including a photoelectric converter configured to convert light into signal charge, and a circuit configured to read the signal charge, and a refractive index of the insulator layer is lower than a refractive index of the semiconductor layer. | 02-27-2014 |