Tonda
Chiyoharu Tonda, Osaka JP
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20110043038 | ELECTRIC RAILWAY POWER-SUPPLY SYSTEM - To present an electric railway power-supply system not requiring vast area for installation, excellent in rapid charge-discharge characteristic, and low in manufacturing cost. At a substation | 02-24-2011 |
Chiyoharu Tonda, Kobe-Shi JP
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20120091806 | POWER CONDITIONER FOR FEEDING SYSTEM - A power conditioner for a feeding system which stabilizes a load of active power is provided. A power conditioner for a feeding system comprises a first AC-DC and DC-AC converter for performing conversion between AC power and DC power; and a nickel-metal hydride battery disposed between and connected to a high-voltage cable at DC side of the first AC-DC and DC-AC converter and a low-voltage cable at the DC side of the first AC-DC and DC-AC converter. | 04-19-2012 |
Chiyoharu Tonda, Sakai-Shi JP
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20150094884 | REGENERATIVE BRAKING EMERGENCY STOP SYSTEM - In a regenerative braking emergency stop system, a substation includes: a rectifier transformer configured to transform AC power received from outside; a rectifier configured to convert the transformed AC power into DC power; and a switch disposed on an electrical path between the rectifier and a power-feed rail and configured to be in a closed state or an opened state; a simulated ripple transmitter configured to transmit a simulated ripple, the simulated ripple being an AC signal having a predetermined frequency; a superimposing circuit connected to the power-feed rail in parallel with the rectifier and configured to superimpose the simulated ripple transmitted from the simulated ripple transmitter on DC power outputted from the rectifier; and a relay device configured to allow the simulated ripple transmitter to transmit the simulated ripple when the rectifier is receiving power from outside and the switch is in a closed state. | 04-02-2015 |
Yasuhiro Tonda, Kanagawa JP
Patent application number | Description | Published |
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20080205167 | Voltage generator for nonvolatile memory and writing and erasing method of nonvolatile memory - A voltage generator for nonvolatile memory that generates an applied voltage to be applied to a nonvolatile memory includes a first voltage generator to generate a first voltage corresponding to the applied voltage, a reference voltage generator to generate a reference voltage, a comparator to compare the first voltage with the reference voltage and output a boost operation control signal according to a comparison result, and a booster to generate the applied voltage in a pulse-like voltage waveform by starting or stopping boost operation based on the boost operation control signal. The applied voltage corresponding to the first voltage upon inversion of the boost operation control signal is varied within one pulse-like voltage waveform by varying one of the first voltage and the reference voltage. | 08-28-2008 |
20100090754 | BOOSTING CIRCUIT - A boosting circuit includes a charge pump circuit; and a power supply circuit configured to supply a power supply voltage to the charge pump circuit. The power supply circuit includes an N-channel transistor connected with a power supply terminal of the charge pump circuit; and a current control circuit configured to control current flowing between the N-channel transistor and the charge pump circuit through the power supply terminal. | 04-15-2010 |
20110002173 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes a memory cell array in which a plurality of nonvolatile memory cells are arrayed, and a program voltage generator that switches current supply amount based on the number of memory cells that are programmed at the same time, among the plurality of memory cells. The nonvolatile semiconductor memory device further includes a selection circuit that selects, among the plurality of memory cells, one or more memory cells that are programmed, to flow a current outputted by the program voltage generator. | 01-06-2011 |
Yasuhiro Tonda, Yokohama-Shi JP
Patent application number | Description | Published |
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20130223164 | SENSE AMPLIFIER CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE - To improve reading accuracy of a sense amplifier circuit and a semiconductor memory device. A sense amplifier circuit includes an N type FET which is a sensing transistor connected between a power supply and a ground via a data line that extends to a memory cell, a resistance element that is connected between a gate of the sensing transistor and the power supply, and a capacitance element that is connected between the gate of the sensing transistor and the ground. | 08-29-2013 |