Patent application number | Description | Published |
20090283502 | PLASMA PROCESSING APPARATUS AND CONTROL METHOD FOR PLASMA PROCESSING APPARATUS - A unit for minimizing the problem that affects a substrate to be processed at the time of turning off a plasma is provided in a plasma processing apparatus using a magnetic field. The plasma processing apparatus comprises: a plasma-generating high-frequency power supply; a bias power supply; and a coil power supply which is connected to a coil disposed outside a vacuum process chamber and generates a magnetic field inside the vacuum process chamber, and the plasma processing apparatus further comprises: a magnetic field measuring unit which measures a magnetic field strength inside the vacuum process chamber; and a control unit which turns off an output on/off signal of the plasma-generating high-frequency power supply or the bias power supply when a magnetic field strength, which is measured after an output on/off signal of the coil power supply is turned off, decays to a predetermined value. | 11-19-2009 |
20100163184 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus for processing a surface of a to-be-processed substrate includes a processing chamber, a first electrode provided in the processing chamber, a second electrode arranged in opposition to the first electrode, a main power source for supplying the first or second electrode with power for generating a plasma, a biasing power source for supplying the second or first electrode with biasing power, a gas supplying unit for supplying a processing gas into the processing chamber and a control unit for controlling the main power source, the biasing power source and the gas supplying unit. The control unit performs a control such that, during a time of transition from a stationary state of plasma, in which a plasma processing is to be carried out, to a plasma quenching, an output of the main power source is kept not larger than an output of the biasing power source. | 07-01-2010 |
20100319854 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus conducting surface processing on a sample to be processed with plasma, an upper electrode includes a shower plate having first gas holes bored through it, a conductor plate disposed at back of the shower plate and having second gas holes bored through it, an insulation plate disposed in a center part of the conductor plate and having third gas holes bored through it, and an antenna basic member unit disposed at back of the conductor plate and having a temperature control function unit and a gass distribution unit. First and second minute gaps are formed in a radial direction at an interface between the shower plate and the insulation plate, and at an interface between the insulation plate and the conductor plate, respectively. Centers of the first gas holes are shifted from centers of the third gas holes in a circumference or radial direction. | 12-23-2010 |
20100326957 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An electrostatic adsorption layer, an electrode layer, and an insulating layer are provided in a lower portion of a focus ring disposed in an outer periphery of a substrate stage. A high frequency bias is applied to the focus ring by applying a high frequency electric power to the electrode layer. Further, the focus ring is electrostatically chucked to the electrostatic chucking layer and a heat transfer gas is provided between the focus ring and the electrostatic adsorption layer. Thus, the focus ring can be cooled and the temperature of the focus ring is controlled to a predetermined value. With this structure, an etching characteristic at a wafer edge portion can be maintained favorably for a long time. Also, a yield rate at the edge portion can be favorably maintained for a long time, a wet period can be prolonged, and the device operation rate can be improved. | 12-30-2010 |
20130189800 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes. | 07-25-2013 |