Patent application number | Description | Published |
20090310263 | MAGNETIC SENSOR - A magnetic sensor comprises a nonmagnetic conductive layer, a free magnetization layer disposed on a first part of the nonmagnetic conductive layer, a fixed magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part, upper and lower first magnetic shield layers opposing each other through the nonmagnetic conductive layer and free magnetization layer interposed therebetween, upper and lower second magnetic shield layers opposing each other through the nonmagnetic conductive layer and fixed magnetization layer interposed therebetween, and an electrically insulating layer disposed between the lower second magnetic shield layer and the nonmagnetic conductive layer, while the lower first magnetic shield layer is arranged closer to the nonmagnetic conductive layer than is the lower second magnetic shield layer. | 12-17-2009 |
20090323230 | MAGNETIC SENSOR - A magnetic sensor comprises a support; a nonmagnetic conductive layer disposed on the support; a fixed magnetization layer disposed on a first part of the nonmagnetic conductive layer and on the support; a free magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part and on the support; and a nonmagnetic low resistance layer, disposed on a part overlapping the nonmagnetic conductive layer in at least one of the fixed magnetization layer and free magnetization layer, having an electrical resistivity lower than that of the one layer. | 12-31-2009 |
20100007995 | Magnetic Sensor - A magnetic sensor comprises a nonmagnetic conductive layer, a free magnetization layer disposed on a first part of the nonmagnetic conductive layer, a fixed magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part, upper and lower first magnetic shield layers opposing each other through the nonmagnetic conductive layer and free magnetization layer interposed therebetween, upper and lower second magnetic shield layers opposing each other through the nonmagnetic conductive layer and fixed magnetization layer interposed therebetween, a first electrically insulating layer disposed between the lower second magnetic shield layer and nonmagnetic conductive layer, and a first electrode layer for electrically connecting the lower second magnetic shield layer and nonmagnetic conductive layer to each other, while the fixed magnetization layer and first electrode layer oppose each other through the nonmagnetic conductive layer. | 01-14-2010 |
20100119875 | MAGNETIC SENSOR - An object is to provide a magnetic sensor permitting an increase in potential output. The magnetic sensor has a channel layer, a magnetization free layer provided on a first portion of the channel layer and configured to detect an external magnetic field, and a magnetization fixed layer provided on a second portion different from the first portion of the channel layer, and a cross-sectional area of the magnetization fixed layer in a surface opposed to the channel layer is larger than a cross-sectional area of the magnetization free layer in a surface opposed to the channel layer. | 05-13-2010 |
20100213519 | MANUFACTURING METHOD OF SILICON SPIN TRANSPORT DEVICE AND SILICON SPIN TRANSPORT DEVICE - An object of the present invention is to provide a silicon spin transport device manufacturing method and silicon spin transport device whereby improved voltage output characteristics can be obtained. The silicon spin transport device manufacturing method comprises: a first step of patterning a silicon film by wet etching and forming a silicon channel layer; and a second step of forming a magnetization free layer and a magnetization fixed layer, which are apart from each other, on the silicon channel layer. | 08-26-2010 |
20100314702 | SPIN TRANSPORT DEVICE - A spin transport device is provided, which includes a channel comprised of a semiconductor material, a magnetization fixed layer arranged on the channel via a first insulating layer, a magnetization free layer arranged on the channel via a second insulating layer, and first and second electrodes arranged on the channel, wherein carrier densities of a first region of the channel including a contact surface with the first insulating layer, a second region of the channel including a contact surface with the second insulating layer, a third region of the channel including an opposite surface to the first electrode, and a fourth region of the channel including an opposite surface to the second electrode are higher than an average carrier density of the whole channel. Accordingly, a spin transport device that can realize good spin transportation and electric resistance characteristics while suppressing the scattering of spin can be provided. | 12-16-2010 |
20100327333 | SPIN TRANSPORT DEVICE - A spin transport device which comprises a channel, first and second insulating layers, a magnetization fixed layer, a magnetization free layer, first and second wirings, and satisfies at least one of following conditions A and B, Condition A: The first wiring includes a vertical portion which extends in a thickness direction of the magnetization fixed layer on the magnetization fixed layer, and a horizontal portion which extends from the vertical portion that is apart from the magnetization fixed layer side in a direction crossing the thickness direction of the magnetization fixed layer, and Condition B: The second wiring includes a vertical portion which extends in a thickness direction of the magnetization free layer on the magnetization free layer, and a horizontal portion which extends from the vertical portion that is apart from the magnetization free layer side in a direction crossing the thickness direction of the magnetization free layer. | 12-30-2010 |
20110204886 | MAGNETIC SENSOR, MAGNETIC DETECTOR, AND MAGNETIC HEAD - A magnetic sensor comprises a first ferromagnetic body, a second ferromagnetic body, a channel extending from the first ferromagnetic body to the second ferromagnetic body, a magnetic shield covering the channel, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the channel. | 08-25-2011 |
20110205666 | MAGNETIC SENSOR, MAGNETIC DETECTOR, AND MAGNETIC HEAD - A magnetic sensor comprises a channel, a ferromagnetic body and first and second reference electrodes on the channel, a magnetic shield covering a part of the channel opposing the ferromagnetic body, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the part of the channel opposing the ferromagnetic body. | 08-25-2011 |
20110244268 | SPIN TRANSPORT ELEMENT - A spin transport element | 10-06-2011 |
20120038355 | MAGNETIC SENSOR AND MAGNETIC DETECTION APPARATUS - A magnetic sensor is provided with a channel of a semiconductor, a first insulating film and a metal body arranged opposite to each other with the channel in between, a ferromagnet provided on the first insulating film, a first reference electrode connected to the metal body, a second reference electrode connected to the metal body, a magnetic shield covering a portion opposed to the ferromagnet in the channel, and a second insulating film provided between the channel and the magnetic shield. The magnetic shield has a through hole extending toward the portion opposed to the ferromagnet in the channel. | 02-16-2012 |
20120056254 | SPIN INJECTION ELECTRODE STRUCTURE, SPIN TRANSPORT ELEMENT, AND SPIN TRANSPORT DEVICE - The present invention provides a spin injection electrode structure, a spin transport element, and a spin transport device which enable effective spin injection in a silicon channel layer at room temperature. A spin injection electrode structure IE comprises a silicon channel layer | 03-08-2012 |
20120074510 | MAGNETIC SENSOR AND MAGNETIC HEAD - A magnetic sensor | 03-29-2012 |
20120181643 | SPIN TRANSPORT DEVICE - The spin transport device includes a semiconductor layer; a first ferromagnetic layer provided on the semiconductor layer via a first tunnel barrier layer; a second ferromagnetic layer provided on the semiconductor layer via a second tunnel barrier layer so as to be divided from the first ferromagnetic layer; and a first wire which generates, upon application of an electric current, a magnetic field in a region between the first ferromagnetic layer and the second ferromagnetic layer in the semiconductor layer. | 07-19-2012 |
20120211848 | SPIN TRANSPORT TYPE MAGNETIC SENSOR - The magnetic sensor includes a base substrate having a magnetic shield layer; a single-domain semiconductor crystal layer attached via an insulating film on the magnetic shield layer of the base substrate; a first ferromagnetic layer formed on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a first tunnel barrier layer; and a second ferromagnetic layer formed, at a distance from the first ferromagnetic layer, on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a second tunnel barrier layer. | 08-23-2012 |
20120228683 | SPIN DEVICE, AND MAGNETIC SENSOR AND SPIN FET USING THE SAME - This spin device includes a semiconductor layer | 09-13-2012 |
20120241883 | SPIN TRANSPORT DEVICE AND MAGNETIC HEAD - The present invention provides a spin transport device having lowered areal resistance in its tunneling layer and a magnetic head. The spin transport device (magnetic sensor | 09-27-2012 |
20120267734 | SPIN TRANSPORT DEVICE - A spin transport device includes a semiconductor layer | 10-25-2012 |
20130258524 | SPIN CONDUCTION ELEMENT AND MAGNETIC SENSOR AND MAGNETIC HEAD USING SPIN CONDUCTION - A spin conduction element includes a main channel layer having a first electrode, a second electrode, a third electrode, a fourth electrode, a fifth electrode, and a sixth electrode, and extending in a first direction. Spins are injected into the main channel layer from a second ferromagnetic layer constituting the second electrode and a fourth ferromagnetic layer constituting the fourth electrode, and a spin current is detected as a voltage in a third ferromagnetic layer constituting the third electrode. | 10-03-2013 |
20150035524 | MAGNETIC SENSOR, MAGNETIC HEAD, AND BIOMAGNETIC SENSOR - A magnetic sensor includes a channel layer, a magnetization free layer placed on a first section of the channel layer, and a magnetization-fixed layer placed on a second section of the channel layer. A thickness of the channel layer of the first section is different from a thickness of the channel layer of the second section and a resistance of an interface between the channel layer and the magnetization free layer is lower than a resistance of an interface between the channel layer and the magnetization-fixed layer. | 02-05-2015 |