Tomoo Murakami
Tomoo Murakami, Kanagawa JP
Patent application number | Description | Published |
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20080318034 | BARRIER FILM AND DEVICE - Disclosed is a barrier film capable of maintaining a high water vapor barrier property when folded. The film is characterized in that it has a structure in which an easy adhesive layer, an organic layer and an inorganic layer are laminated in that order on one surface or both surfaces of a plastic film, wherein a center liner average roughness of the surface of the organic layer on the inorganic layer side is at least 0.5 nm, and the organic layer contains a resin which is obtained by curing an acrylic monomer having at least two acryloyl groups and at least two urethane groups in one molecule as a polymerizable component. | 12-25-2008 |
20090095345 | GAS-BARRIER FILM AND ENVIRONMENT-SENSITIVE DEVICE - Provided is a gas-barrier film having a high barrier property when it is folded. The gas barrier film is characterized in that an organic layer comprises a resin obtained by curing a monomer as a polymerizing ingredient and the monomer has a structure of pentahydric alcohol or more polyhydric alcohol having a molecular weight of from 200 to 800 in which at least 5 hydroxyl groups are substituted with an aliphatic carbonyloxy group of the following general formula (1): | 04-16-2009 |
20110052892 | GAS BARRIER FILM AND DEVICE - Provided is a gas barrier film excellent in barrier property and flexibility. A gas barrier film comprising a substrate film, a first organic layer, an inorganic layer and an outermost organic layer in that order, wherein the outermost organic layer has a thickness of 0.3 μm or more, and a/b≧2, wherein a represents the thickness of the outermost organic layer, and b represents the thickness of the first organic layer. | 03-03-2011 |
20110056608 | METHOD FOR COUNTERACTING CURLING TENDENCY OF GAS BARRIER FILM, METHOD FOR PRODUCING GAS BARRIER FILM, AND METHOD FOR PRODUCING ELECTRONIC DEVICE - A method for counteracting the curling tendency of a gas barrier film having a tendency to curl up with a support side thereof facing inside, comprising (1) heating the gas barrier film from the support side thereof to thereby control the support temperature to fall between Tg and Tg+40° C., and (2) conveying the film in the roller circumferential direction within one second after the temperature of the support has reached Tg, while a part of the gas barrier layer of the gas barrier film is kept in contact with a film surface center part noncontact roller wherein Tg means the glass transition temperature of the support. | 03-10-2011 |
Tomoo Murakami, Tokyo JP
Patent application number | Description | Published |
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20080251942 | Semiconductor Device and Manufacturing Method Thereof - Electrode pads ( | 10-16-2008 |
20100308474 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A substrate ( | 12-09-2010 |
20130005085 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A substrate and a semiconductor chip are connected by means of flip-chip interconnection. Around connecting pads of the substrate and input/output terminals of the semiconductor chip, an underfill material is injected. The underfill material is a composite material of filler and resin. Also, a first main surface of the substrate, which is not covered with the underfill material, and the side surfaces of the semiconductor chip are encapsulated with a molding material. The molding material is a composite material of filler and resin. An integrated body of the substrate and the semiconductor chip, which are covered with the molding material, is thinned from above and below. | 01-03-2013 |
Tomoo Murakami, Minato-Ku JP
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20100188821 | DEVICE HAVING ELECTRONIC COMPONENTS MOUNTED THEREIN AND METHOD FOR MANUFACTURING SUCH DEVICE - A device having electronic components mounted therein has a first electronic component having an external terminal on a first surface and a heat spreader on a second surface, at least one second electronic component that is placed in the direction of a second surface of the first electronic component, a flexible circuit board that is electrically connected to the first electronic component and at least one second electronic component, and at least the part to which at least one second electronic component is connected is located on the second surface side of the first electronic component, and a spacer that is located between at least part of the flexible circuit board and the second surface of the first electronic component. The spacer can prevent heat from the first electronic component from being directly transferred to the second electronic component. | 07-29-2010 |
Tomoo Murakami, Ashigara-Kami-Gun JP
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20090197101 | GAS BARRIER LAYER DEPOSITION METHOD, GAS BARRIER FILM AND ORGANIC EL DEVICE - The method of depositing a gas barrier layer includes supplying a gas material including silane gas and ammonia gas as and a discharge gas including nitrogen gas as and depositing a silicon nitride film on a substrate using capacitively coupled chemical vapor deposition to form the gas barrier layer on the substrate. A ratio P/Q of RF power P (W) required to form the silicon nitride film to a total gas flow rate Q (sccm) of the silane gas, the ammonia gas and the nitrogen gas is in a range of from 0.4 to 40. The gas barrier film includes the gas barrier layer deposited by the gas barrier layer deposition method. The organic EL device includes the gas barrier film that serves as a sealing film. | 08-06-2009 |
Tomoo Murakami, Ashigarakami-Gun JP
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20090110896 | SILICON -NITROGEN COMPOUND FILM, AND GAS-BARRIER FILM AND THIN-FILM DEVICE USING THE SILICON-NITROGEN COMPOUND FILM - A silicon-nitrogen compound film according to the first aspect of the present invention is made of a material expressed by a compositional formula Si | 04-30-2009 |
20110236660 | GAS BARRIER FILM AND DEVICE - Disclosed is a gas barrier film comprising a substrate film, an organic layer and an inorganic layer provided directly on the surface of the organic layer, wherein the organic layer laid under the inorganic layer has a thickness of from 0.3 μm to 10 μm; the organic layer laid under the inorganic layer has a hardness, measured by the nanoindentation, of 0.03 to 0.5 GPa; and the organic layer laid under the inorganic layer, assumed to have a thickness “a”, and the inorganic layer on the organic layer, assumed to have a thickness “b”, satisfying a relation of a/b>10. The gas barrier film is excellent in the barrier performance, adhesiveness, bending resistance and scratch resistance. | 09-29-2011 |