| Patent application number | Description | Published |
|---|
| 20090050020 | COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME - A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), | 02-26-2009 |
| 20090069521 | Novel Compound, Polymer, and Radiation-Sensitive Composition - A radiation-sensitive resin composition is provided which has high transparency to radiation, excelling in basic properties as a resist such as sensitivity, resolution, and pattern shape, and, in particular, a high resolution radiation-sensitive resin composition providing a wide DOF and excelling in LER. Also provided are a polymer which can be used in the composition and a novel compound useful for synthesizing the polymer. The novel compound is shown by the following formula (2), | 03-12-2009 |
| 20090318652 | NOVEL COMPOUND, POLYMER, AND RESIN COMPOSITION - A radiation-sensitive resin composition which has high transparency to radiation, excelling in basic properties as a resist such as sensitivity, resolution, and pattern shape, and, in particular, exhibiting high resolution performance, excellent DOF and LER, and high resistance to a liquid medium used in liquid immersion lithography is provided. Also provided are a polymer which can be used in the composition, a novel compound useful for synthesizing the polymer, and a method of producing the composition. A radiation-sensitive resin composition having an excellent resistance to a liquid medium can be obtained by using the novel compound shown by the following formula (1), | 12-24-2009 |
| 20100009292 | RESIN COMPOSITION FOR MICROPATTERN FORMATION AND METHOD OF MICROPATTERN FORMATION - A resin composition which can increase the pattern shrink rate while maintaining the advantages of capability of effectually and precisely micronizing the resist pattern gaps irrespective of the surface conditions of the substrate and forming resist patterns exceeding the wavelength limit economically at low cost in a good condition having only small defects, and a method of efficiently forming a micropattern using the resin composition are disclosed. The resin composition for forming a micropattern includes a hydroxyl group-containing resin, a crosslinking component, and an alcohol solvent which contains an alcohol and not more than 10 mass % of water relative to the total solvent. The crosslinking component includes a compound having two or more acryloyloxy groups in the molecule. | 01-14-2010 |
| 20100028800 | RADIATION-SENSITIVE RESIN COMPOSITION - It is intended to provide a radiation-sensitive resin composition, which comprises a radiation-sensitive acid generator excellent in resolution performance, heat stability, and storage stability, suppresses fluctuations in line width and deterioration in pattern profile attributed to standing waves, and produces a resist pattern improved in nano edge roughness and LEF. The radiation-sensitive resin composition is characterized by (A) a radiation-sensitive acid generator comprising: a sulfonium salt compound typified by 2,4,6-trimethylphenyldiphenylsulfonium 2,4-difluorobenzenesulfonate, 2,4,6-trimethylphenyldiphenylsulfonium 4-trifluoromethylbenzenesulfonate, or the like; and a sulfonimide compound. It is preferred that the composition should further comprise (B) a resin typified by a 4-hydroxystyrene/4-t-butoxystyrene copolymer, a 4-hydroxystyrene/t-butyl (meth)acrylate, or the like. | 02-04-2010 |
| 20100040977 | RADIATION-SENSITIVE RESIN COMPOSITION - A radiation-sensitive resin composition includes a resin that includes a repeating unit shown by the following formula (1) and a solvent. The radiation-sensitive resin composition has an excellent performance as a radiation-sensitive acid generator, includes a resin that adversely affects the environment and a human body to only a small extent, and can form a resist film that has a high resolution and forms an excellent resist pattern. | 02-18-2010 |
| 20100063232 | POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN - A resin that includes a repeating unit shown by the following formula (10) has an excellent performance as a radiation sensitive acid generator, and exhibits only a small adverse effect on the environment and a human body. | 03-11-2010 |
| 20100151384 | COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME - A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), | 06-17-2010 |
| 20100178608 | RADIATION-SENSITIVE RESIN COMPOSITION - A radiation-sensitive resin composition includes a resin (A1) that includes a repeating unit shown by the following formula (1-1) and a repeating unit shown by the following formula (1-2), and a radiation-sensitive acid generator (B). The radiation-sensitive resin composition exhibits excellent sensitivity, and can reduce a mask error factor (MEEF). | 07-15-2010 |
| 20100190104 | METHOD FOR PATTERN FORMATION AND RESIN COMPOSITION FOR USE IN THE METHOD - A pattern forming method includes (1) selectively exposing a first resist layer, and developing the exposed first resist layer to form a first pattern, (2) applying a resin composition containing a hydroxyl group-containing resin and a solvent to the first pattern, baking the applied resin composition, and developing the baked resin composition to form a second pattern, the hydroxyl group-containing resin becoming insoluble or scarcely soluble in a developer when baked, and (3) totally or selectively exposing the second pattern to make the second pattern partly soluble in the developer, and developing the exposed second pattern to form a third pattern in which at least a hole or a groove is formed in the second pattern. | 07-29-2010 |
| 20100221659 | COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION - A compound has a partial structure shown by a following formula (1), | 09-02-2010 |
| 20100323292 | RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN - A resist pattern formation method includes (1) a step of forming a first resist pattern which includes forming a first resist layer on a substrate, selectively exposing the first resist layer to radiation through a mask, and developing the exposed first resist layer, (2) a step of insolubilizing the first resist pattern by coating the first resist pattern with a resist pattern insolubilizing resin composition, baking or curing with UV, and developing the resist pattern insolubilizing resin composition, (3) a step of forming a second resist layer on the insolubilized resist pattern and selectively exposing the second resist layer to radiation through a mask, and (4) a step of developing the exposed second resist layer to form a second resist pattern. | 12-23-2010 |
| 20100324329 | COMPOUND - A compound is shown by the following formula (5) in which at least one of R | 12-23-2010 |
