Patent application number | Description | Published |
20080198513 | MAGNETIC THIN FILM HAVING NON-MAGNETIC SPACER LAYER THAT IS PROVIDED WITH SnO2 LAYER - A magnetic thin film has: a pinned layer whose magnetization direction is fixed with respect to an external magnetic field; a free layer whose magnetization direction is changed in accordance with the external magnetic field; and a non-magnetic spacer layer that is sandwiched between said pinned layer and said free layer, wherein sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said non-magnetic spacer layer, and said free layer. Said non-magnetic spacer layer has a first layer which includes SnO | 08-21-2008 |
20080204942 | MAGNETIC THIN FILM HAVING SPACER LAYER THAT CONTAINS CuZn - A magnetic thin film has a pinned layer whose magnetization direction is fixed with respect to an external magnetic field, a free layer whose magnetization direction is changed according to the external magnetic field, and a spacer layer which is sandwiched between said pinned layer and said free layer. Sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said spacer layer, and said free layer. Said spacer layer has a CuZn metal alloy which includes an oxide region, said oxide region consisting of an oxide of any of Al, Si, Cr, Ti, Hf, Zr, Zn, and Mg. | 08-28-2008 |
20080218907 | MAGNETO-RESISTANCE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD - A magneto-resistance effect element (MR element) used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first non-magnetic metal layer, a semiconductor layer, and a second non-magnetic metal layer. The first non-magnetic metal layer and the second non-magnetic metal layer comprise CuPt films having a thickness ranging from a minimum of 0.2 nm to a maximum of 2.0 nm, and the Pt content ranges from a minimum of 5 at % to a maximum of 25 at %. The semiconductor layer comprises a ZnO film, ZnS film, or GaN film having a thickness ranging from a minimum of 1.0 nm to a maximum of 2.5 nm. | 09-11-2008 |
20080226947 | MAGNETO-RESISTANCE EFFECT ELEMENT HAVING FREE LAYER INCLUDING MAGNETOSTRICTION REDUCTION LAYER AND THIN-FILM MAGNETIC HEAD - A magnetoresistance effect element includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction variable depending on an external magnetic field, and a nonmagnetic spacer layer disposed between the pinned layer and the free layer. The free layer includes a Heusler alloy layer and a magnetostriction reduction layer made of a 4th group element, a 5th group element, or a 6th group element. | 09-18-2008 |
20080226948 | MAGNETO-RESISTANCE EFFECT ELEMENT HAVING DIFFUSION BLOCKING LAYER AND THIN-FILM MAGNETIC HEAD - A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction perpendicular to layer surfaces via a lower shield layer and an upper shield layer. The pinned layer comprises an outer layer having a fixed magnetization direction, a nonmagnetic intermediate layer, and an inner layer in the form of a ferromagnetic layer. The spacer layer comprises a first nonmagnetic metal layer, a semiconductor layer made of ZnO, and a second nonmagnetic metal layer. The inner layer or the outer layer includes a diffusion blocking layer made of an oxide of an element whose electronegativity is equal to or smaller than Zn, e.g., ZnO, TaO, ZrO, MgO, TiO, or HfO, or made of RuO. | 09-18-2008 |
20090002893 | MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP STRUCTURE, AND MAGNETIC DISK SYSTEM - The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the free layer functions such that the direction of magnetization changes depending on an external magnetic field, and the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of zinc oxide, tin oxide, indium oxide, and indium tin oxide (ITO), the first nonmagnetic metal layer is made of Cu, and the second nonmagnetic metal layer is substantially made of Zn. MR change rate and heat resistance are thus much more improved than ever before. | 01-01-2009 |
20090040662 | Magnetoresistive element having spacer layer that includes two layered regions composed of oxide semiconductor and nonmagnetic conductor phase sandwiched therebetween - An MR element includes a free layer having a direction of magnetization that changes in response to an external magnetic field, a pinned layer having a fixed direction of magnetization, and a spacer layer disposed between these layers. The spacer layer includes a first region, a second region and a third region that are each in the form of a layer and that are arranged in a direction intersecting the plane of each of the foregoing layers. The second region is sandwiched between the first region and the third region. The first region and the third region are each composed of an oxide semiconductor, and the second region includes at least a nonmagnetic conductor phase out of the nonmagnetic conductor phase and an oxide semiconductor phase. | 02-12-2009 |
20090059442 | CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING CHARACTERISTIC FREE LAYERS - A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer which is sandwiched between the first magnetic layer and the second magnetic layer, the first non-magnetic intermediate layer producing a magnetoresistance effect between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer which is sandwiched between the second magnetic layer and the third magnetic layer, the second non-magnetic intermediate layer allowing the second magnetic layer and the third magnetic layer to be exchange-coupled such that magnetization directions thereof are anti-parallel to each other under no magnetic field, the stack being adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack, the bias magnetic layer applying a bias magnetic field to the stack in a direction that is perpendicular to the air bearing surface. | 03-05-2009 |
20090059443 | Magnetoresistive element including insulating film touching periphery of spacer layer - An MR element includes a stack of layers including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The stack of layers has an outer surface, and the spacer layer has a periphery located in the outer surface of the stack of layers. The magnetoresistive element further includes an insulating film that touches the periphery of the spacer layer. The spacer layer includes a layer made of an oxide semiconductor composed of an oxide of a first metal. The insulating film includes a contact film that touches the periphery of the spacer layer and that is made of an oxide of a second metal having a Pauling electronegativity lower than that of the first metal by 0.1 or more. | 03-05-2009 |
20090061258 | CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING CHARACTERISTIC FREE LAYERS - A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, a first non-magnetic intermediate layer which is sandwiched between the first magnetic layer and the second magnetic layer, the first non-magnetic intermediate layer producing a magnetoresistance effect between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer which is sandwiched between the second magnetic layer and the third magnetic layer, the second non-magnetic intermediate layer allowing the second magnetic layer and the third magnetic layer to be exchange-coupled such that magnetization directions thereof are anti-parallel to each other under no magnetic field, the stack being adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack, the bias magnetic layer applying a bias magnetic field to the stack in a direction that is perpendicular to the air bearing surface. | 03-05-2009 |
20090067099 | Magnetoresistive element including layered film touching periphery of spacer layer - An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer. | 03-12-2009 |
20090086383 | CPP type magneto-resistive effect device and magnetic disk system - The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back. | 04-02-2009 |
20090128965 | CPP MAGNETO-RESISTIVE ELEMENT PROVIDED WITH A PAIR OF MAGNETIC LAYERS AND NICR BUFFER LAYER - A magnetic field detecting element has a stack which includes a NiCr layer, a first magnetic layer whose magnetization direction varies in accordance with an external magnetic field, a non-magnetic spacer layer, and a second magnetic layer whose magnetization direction varies in accordance with the external magnetic field, said NiCr layer, said first magnetic layer, said spacer layer and said second magnetic layer being disposed in this order and being arranged in contact with each other, wherein a sense current is adapted to flow in a direction that is perpendicular to a film surface of said stack; and a bias magnetic layer which is disposed on a side of said stack, said side being opposite to an air bearing surface of said stack, wherein said bias magnetic layer is adapted to apply a bias magnetic field to said stack in a direction that is perpendicular to said air bearing surface. Both first and second magnetic layers have bcc crystalline structures, and said non-magnetic spacer layer has a film configuration in which an insulating layer or a semiconductor layer is inserted into a metal layer. | 05-21-2009 |
20090168264 | Magnetoresistive element and magnetic head - In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in response to an external magnetic field. The spacer layer and the second ferromagnetic layer are stacked in this order on the first ferromagnetic layer. The first ferromagnetic layer includes a plurality of ferromagnetic material layers stacked, and an insertion layer made of a nonmagnetic material and inserted between respective two of the ferromagnetic material layers that are adjacent to each other along the direction in which the layers are stacked. The ferromagnetic material layers and the spacer layer each include a component whose crystal structure is a face-centered cubic structure. The spacer layer and the insertion layer are each composed of an element having an atomic radius greater than that of at least one element constituting the ferromagnetic material layers. | 07-02-2009 |
20090174971 | CPP-TYPE MAGNETO RESISTIVE EFFECT ELEMENT HAVING A PAIR OF MAGNETIC LAYERS - A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer. | 07-09-2009 |
20090190270 | MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM - The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities. | 07-30-2009 |
20090231762 | MAGNETORESISTIVE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD WITH THE MAGNETORESISTIVE EFFECT ELEMENT - An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the free layer is substantially perpendicular to a film surface thereof, and a magnetization direction of the pinned layer is substantially parallel to a film surface thereof. | 09-17-2009 |
20090237839 | CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING THREE MAGNETIC LAYERS - A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers, said first non-magnetic intermediate layer allowing said first magnetic layer and said second magnetic layer to be exchange-coupled such that the magnetization directions thereof are anti-parallel to each other when no magnetic field is applied; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers, said second non-magnetic intermediate layer producing a magnetoresistance effect between said second magnetic layer and said third magnetic layer; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided on an opposite side of said magnetoresistive stack from an air bearing surface, said bias magnetic layer applying a bias magnetic field to said magnetoresistive stack in a direction perpendicular to the air bearing surface. | 09-24-2009 |
20090274837 | METHOD OF PRODUCING THE MAGNETORESISTIVE DEVICE OF THE CPP TYPE - The invention provides a process for the formation of a sensor site of a magnetoresistive device in which the first ferromagnetic layer and a nonmagnetic intermediate layer are formed in order, then surface treatment is applied to the surface of the nonmagnetic intermediate layer, and thereafter the second ferromagnetic layer is formed on the thus treated surface of the nonmagnetic intermediate layer. The surface treatment is implemented by a method of letting a modification element hit right on the surface of the nonmagnetic intermediate layer using a vacuum. The nonmagnetic intermediate layer is composed mainly of an oxide or nitride, and the modification element is a low-melting element having a melting point of 500° C. or lower. It is thus possible to reduce spin scattering while reducing oxidization or nitriding of the surfaces of the ferromagnetic layers used for the sensor site, thereby achieving high MR change rates. There is also a limited dispersion of the MR change rate with extremely improved reliability. | 11-05-2009 |
20090290264 | MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM - The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device. The framework has a front frame-constituting portion located on a medium opposite plane side in front and near where the magnetoresistive unit is positioned, and any other frame portion. The any other frame portion partially comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The bias magnetic field-applying layer is constructed by repeating the stacking of a multilayer unit at least twice or up to | 11-26-2009 |
20090296283 | MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM - The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them with a sense current applied in a stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is sandwiched between them. The first shield layer and the second shield layer are each controlled by magnetization direction control means in terms of magnetization direction to create an antiparallel magnetization state where their magnetizations are in opposite directions. The first ferromagnetic layer and the second ferromagnetic layer are exchange coupled to the first shield layer and the second shield layer, respectively, by way of a first exchange coupling function gap layer and a second exchange coupling function gap layer, with an exchange coupled strength of 0.2 to 2.5 erg/cm | 12-03-2009 |
20090303640 | MAGNETO-RESISTANCE EFFECT ELEMENT PROVIDED WITH CURRENT LIMITING LAYER INCLUDING MAGNETIC MATERIAL - A magneto resistance effect element includes a first magnetic layer, a second magnetic layer and a spacer layer interposed between the first and second magnetic layers. The magneto resistance effect element is configured to allow sense current to flow in a direction that is perpendicular to film planes of the first magnetic layer, the second magnetic layer and the spacer layer so that a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer varies depending on an external magnetic field. The present invention aims at providing a magneto resistance effect element which ensures high resistance to sense current, while limiting the influence of the current limiting layer on the magnetic layer, and which thereby achieves a high magneto resistance ratio. | 12-10-2009 |
20100097722 | MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM - The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR. | 04-22-2010 |
20100232074 | Magnetoresistive effect element and magnetic disk device - A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps. | 09-16-2010 |
20110026378 | Heat-assisted magnetic recording head with laser diode - A heat-assisted magnetic recording head includes a slider, and an edge-emitting laser diode fixed to the slider. The slider includes: a substrate; and an MR element, two reproduction wiring layers, a coil, two recording wiring layers, a magnetic pole, a near-field light generating element, and a waveguide that are stacked above the top surface of the substrate. The two reproduction wiring layers supply a sense current to the MR element. The two recording wiring layers supply a coil current to the coil. The laser diode has an emitting end face including an emission part for emitting laser light, and a bottom surface. The laser diode is arranged so that the bottom surface faces the top surface of the slider. As viewed from above, the laser diode does not overlap the two reproduction wiring layers but overlaps at least one of the two recording wiring layers. | 02-03-2011 |
20110038236 | Near-Field Light Transducer Comprising Propagation Edge With Predetermined Curvature Radius - Provided is a near-field light transducer with a propagation edge in which the generation of defects is suppressed. The transducer is formed of a Ag alloy and comprises an edge, the edge comprising a portion to be coupled with a light in a surface plasmon mode, the edge extending from the portion to a near-field light generating end surface, and the edge being configured to propagate surface plasmon excited by the light. Further, a curvature radius of the rounded edge is set in the range from 6.25 nm to 20 nm. In the edge and its vicinity, the generation of defects such as cracking and chipping is suppressed. Thereby improved are a propagation efficiency of surface plasmon and a light use efficiency of the transducer. The Ag alloy preferably contains at least one element selected from a group of Pd, Au, Cu, Ru, Rh and Ir. | 02-17-2011 |
20120230169 | THERMALLY-ASSISTED MAGNETIC RECORDING METHOD FOR WRITING DATA ON A HARD DISK MEDIUM - A thermally-assisted magnetic recording method includes first and second steps. The first step applies heat to part of a hard disk medium and forms a moving high-temperature region in a magnetic recording layer of the hard disk medium. The high-temperature region is higher in temperature than a region therearound and has a temperature equal to or higher than the maximum coercivity vanishing temperature of a plurality of magnetic grains contained in the magnetic recording layer. At least one magnetic grain that is adjacent to the rear end of the high-temperature region in the direction of movement of the high-temperature region has a coercivity of a value other than 0. The second step applies a write magnetic field to the hard disk medium such that the write magnetic field applied to the at least one magnetic grain adjacent to the rear end of the high-temperature region is 3 kOe or smaller in magnitude. | 09-13-2012 |
20120232831 | METHOD OF ESTIMATING CURIE TEMPERATURE DISTRIBUTION IN A MAGNETIC RECORDING LAYER - In a method of estimating the Curie temperature distribution of a plurality of magnetic grains contained in a magnetic recording layer, measurement values of first and second parameters are obtained for each of different temperatures of the magnetic recording layer which is used as the measurement subject. The first parameter has such a property that the absolute value of the first parameter for each magnetic grain takes on the minimum value when the temperature of each magnetic grain reaches a predetermined temperature, wherein the predetermined temperature varies according to the Curie temperature of each magnetic grain in such a manner as to increase as the Curie temperature increases, and to decrease as the Curie temperature decreases. The second parameter is related to the standard deviation of the coervicity distribution of the magnetic grains divided by the coervicity of the magnetic recording layer. The method calculates a value related to the Curie temperature distribution, based on the lowest temperature at which the absolute measurement value of the first parameter takes on the minimum value and the temperature of the magnetic recording layer at which the standard deviation of the coervicity distribution of the magnetic grains divided by the coervicity of the magnetic recording layer takes on the maximum value, which is obtained from the measurement value of the second parameter. | 09-13-2012 |
20130016591 | THERMALLY-ASSISTED MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING/REPRODUCING DEVICE USING THE SAMEAANM TOMIKAWA; SatoshiAACI TokyoAACO JPAAGP TOMIKAWA; Satoshi Tokyo JPAANM MIZUNO; TomohitoAACI TokyoAACO JPAAGP MIZUNO; Tomohito Tokyo JP - A thermally-assisted magnetic recording (TAMR) medium of the present invention includes: a magnetization direction arrangement layer on a substrate; and a magnetic recording layer on the magnetization direction arrangement layer, wherein the magnetization direction arrangement layer is made of at least one selected from a group consisting of Co, Zr, CoZr, CoTaZr, CoFeTaZrCr, CoNbZr, CoNiZr, FeCoZrBCu, NiFe, FeCo, FeAlN, (FeCo)N, FeAlSi, and FeTaC so that a spreading of the heating spot applied from the magnetic head for thermally-assisted recording to the film surface of the magnetic recording medium is suppressed, and that an SN is improved by arranging the magnetization direction of the perpendicularly written recording magnetization to become identical to a perpendicular direction, and realizing the higher recording density. | 01-17-2013 |
20130016592 | THERMALLY-ASSISTED MAGNETIC RECORDING HEAD, HEAD GIMBAL ASSEMBLY AND MAGNETIC RECORDING DEVICEAANM TOMIKAWA; SatoshiAACI TokyoAACO JPAAGP TOMIKAWA; Satoshi Tokyo JPAANM Mizuno; TomohitoAACI TokyoAACO JPAAGP Mizuno; Tomohito Tokyo JPAANM Kurihara; KatsukiAACI TokyoAACO JPAAGP Kurihara; Katsuki Tokyo JP - A thermally-assisted magnetic recording head, includes: a pole that generates a writing magnetic field from an end surface that forms a portion of an air bearing surface opposing a magnetic recording medium; a waveguide through which light for exciting a surface plasmon propagates; a plasmon generator that couples to the light in a surface plasmon mode and generates near-field light from a near-field light generating portion on a near-field light generating end surface that forms the portion of the air bearing surface; and magnetic field focusing parts that are able to focus the writing magnetic field generated from the pole and that are disposed on both sides of the pole in a track width direction from a perspective of the air bearing surface side. | 01-17-2013 |
20140043707 | ESTIMATION METHOD OF CURIE TEMPERATURE DISTRIBUTION WIDTH - An estimation method includes a heating step in which a recording bit, on which a reference signal is recorded, is heated under each of heating conditions having different heating temperatures, the recording bit being at least one recording bit in the magnetic recording medium, and a measurement step in which a signal intensity with respect to the reference signal recorded in the recording bit after heating is measured under each of the heating conditions of the heating step. Based on the signal intensities with respect to the reference signal respectively measured in the measurement step, the distribution width of the Curie temperatures of the plurality of magnetic grains that form the magnetic recording layer is estimated. | 02-13-2014 |