Patent application number | Description | Published |
20100072406 | GLASS COMPOSITION FOR ULTRAVIOLET LIGHT AND OPTICAL DEVICE USING THE SAME - A glass composition for ultraviolet light is provided. The glass composition for ultraviolet light contains Lu, Si, and O in an amount of 99.99 weight % or more in total. The glass composition contains Lu in an amount of 26% or more and 39% or less in cation percent and Si in an amount of 61% or more and 74% or less in cation percent. | 03-25-2010 |
20100078633 | INSULATED GATE TYPE TRANSISTOR AND DISPLAY DEVICE - A transistor comprises an active layer of an oxide containing at least one element selected from In, Ga and Zn. The active layer is formed such that a desorption gas monitored as a water molecule by a temperature programmed desorption analysis is 1.4/nm | 04-01-2010 |
20100084648 | LIGHT-EMITTING APPARATUS AND PRODUCTION METHOD THEREOF - Provided is a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor containing at least one element selected from In and Zn, the method including the steps of: forming a field effect transistor on a substrate; forming an insulating layer; forming a lower electrode on the insulating layer; forming an organic layer for constituting an organic EL device on the lower electrode; forming an upper electrode on the organic layer; and after the step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable as H | 04-08-2010 |
20100096565 | GLASS COMPOSITION FOR ULTRAVIOLET LIGHT AND OPTICAL DEVICE USING THE SAME - A glass composition for ultraviolet light is provided. The glass composition for ultraviolet light contains Lu, Al, and O in an amount of 99.99 weight % or more in total. The glass composition contains Lu in an amount of 24% or more and 33% or less in cation percent and Al in an amount of 67% or more and 76% or less in cation percent. | 04-22-2010 |
20100283049 | OXIDE SEMICONDUCTOR DEVICE INCLUDING INSULATING LAYER AND DISPLAY APPARATUS USING THE SAME - Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4×10 | 11-11-2010 |
20110073856 | THIN FILM TRANSISTOR - To achieve, in an oxide semiconductor thin layer transistor, both the stability of threshold voltage against electric stress and suppression of variation in the threshold voltage in a transfer characteristic. A thin film transistor includes an oxide semiconductor layer and a gate insulating layer disposed so as to be in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer contains hydrogen atoms and includes at least two regions that function as active layers of the oxide semiconductor and have different average hydrogen concentrations in the layer thickness direction; and when the regions functioning as the active layers of the oxide semiconductor are sequentially defined as, from the side of the gate insulating layer, a first region and a second region, the average hydrogen concentration of the first region is lower than the average hydrogen concentration of the second region. | 03-31-2011 |
20120152730 | GLASS COMPOSITION FOR ULTRAVIOLET LIGHT AND OPTICAL DEVICE USING THE SAME - A glass composition for ultraviolet light is provided. The glass composition for ultraviolet light contains Lu, Al, and O in an amount of 99.99 weight % or more in total. The glass composition contains Lu in an amount of 24% or more and 33% or less in cation percent and Al in an amount of 67% or more and 76% or less in cation percent. | 06-21-2012 |
20120319015 | GLASS COMPOSITION AND OPTICAL DEVICE - There is provided a glass composition containing an oxide containing Lu, Si, and Al, in which the composition of the glass composition lies within a compositional region of a ternary composition diagram of Lu, Si, and Al in terms of cation percent, the compositional region being defined by the following six points:
| 12-20-2012 |