Patent application number | Description | Published |
20110221827 | LIQUID EJECTING HEAD AND LIQUID EJECTING APPARATUS - There is provided a liquid ejecting head comprising a pressure generating chamber and a piezoelectric actuator having a piezoelectric material consisting of composite oxide. The composite oxide contains bismuth, sodium, barium, titanium, and zinc. A ratio of zinc content to the total amount of titanium and zinc is 0.35 mol % or more and 1.25 mol % or less. | 09-15-2011 |
20110221828 | LIQUID-EJECTING HEAD, LIQUID-EJECTING APPARATUS, AND PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC MATERIAL - A liquid-ejecting head comprises a pressure-generating chamber and a piezoelectric element including a piezoelectric material. The piezoelectric material contains a complex oxide having a perovskite structure. The complex oxide contains bismuth, sodium, barium, titanium, and copper. The ratio of copper to the total amount of titanium and copper is 0.35 mol % or more and 0.70 mol % or less. | 09-15-2011 |
20110254899 | LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS - A liquid ejecting head comprises a pressure chamber communicating with nozzle and a piezoelectric actuator including a piezoelectric layer and an electrode which applies a voltage to the piezoelectric layer. The piezoelectric layer is composed of a solid solution containing bismuth sodium titanate and 0.2 mol % or more and 8.0 mol % or less of copper. | 10-20-2011 |
20110254901 | LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS - A liquid ejecting head comprises a pressure chamber communicating with nozzle and a piezoelectric actuator. The piezoelectric layer is composed of a solid solution containing bismuth sodium titanate and 0.2 mol % or more and 8.0 mol % or less of manganese. | 10-20-2011 |
20120117770 | METHOD OF MANUFACTURING PIEZOELECTRIC FILM, PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A method of manufacturing a piezoelectric film using a piezoelectric film-forming composition. The piezoelectric film-forming composition contains Bi, Fe, Mn, Ba, and Ti and the mole ratio of Bi to the total amount of Fe and Mn is 1.02 or more 1.08 or less. | 05-17-2012 |
20120120161 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A piezoelectric element comprises a electrode and a piezoelectric layer made of a complex oxide having a perovskite structure containing at least bismuth, barium, iron, and titanium. A layered compound containing iron, barium, titanium and oxygen is formed between the piezoelectric layer and the electrode. | 05-17-2012 |
20120120162 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A piezoelectric element comprises a piezoelectric layer and electrodes provided to the piezoelectric layer. The piezoelectric layer has a perovskite structure that includes Bi, Fe, Ba, Ti, and Co, and the mole ratio of Co to the total amount of Co and Fe is 0.02 or more and 0.07 or less. | 05-17-2012 |
20120182358 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A piezoelectric element comprises a piezoelectric layer and an electrode which is provided with the piezoelectric layer. The piezoelectric layer comprises a complex oxide which has a perovskite structure including bismuth, iron, a first dopant element which is at least one type selected from a group formed from sodium, potassium, calcium, and strontium, and a second dopant element which is at least one type selected from a group formed from manganese, titanium, vanadium, niobium, and tin. | 07-19-2012 |
20120217430 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A piezoelectric element comprises a piezoelectric layer and an electrode provided with the piezoelectric layer. The piezoelectric layer is made of a composite oxide containing bismuth ferrite, barium titanate, and bismuth zinc titanate. | 08-30-2012 |
20120268533 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A piezoelectric element comprises a first electrode including platinum, a piezoelectric layer disposed above the first electrode, made of a complex oxide having a perovskite structure containing at least bismuth, and a second electrode disposed above the piezoelectric layer. An oxide containing bismuth and platinum is disposed at the interface of the piezoelectric layer with the first electrode. | 10-25-2012 |
20130250006 | LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, PIEZOELECTRIC ELEMENT, AND METHOD FOR MANUFACTURING THE SAME - A liquid ejecting head is provided with a piezoelectric element having a piezoelectric layer and a first electrode and a second electrode provided on the piezoelectric layer, in which the piezoelectric layer contains a buffer layer provided on the first electrode and having a perovskite structure containing bismuth, iron, and at least one of zinc and nickel and a complex oxide layer provided on the buffer layer and having a perovskite structure containing bismuth, iron, barium, and titanium. | 09-26-2013 |
20130250011 | LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, PIEZOELECTRIC ELEMENT, AND METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT - To provide a liquid ejecting head having a piezoelectric layer in which crack occurrence is suppressed and the crystal is oriented in a specific orientation, a piezoelectric element a liquid ejecting apparatus and a method of manufacturing a piezoelectric element. A liquid ejecting head which discharges liquid from a nozzle opening, includes a piezoelectric element having a piezoelectric layer and a first electrode and a second electrode provided on the piezoelectric layer. The piezoelectric layer has a buffer layer made of bismuth manganate or a mixed crystal of bismuth manganate and bismuth ferrite, provided on the first electrode, and a piezoelectric material layer having a perovskite structure, provided on the buffer layer. | 09-26-2013 |
Patent application number | Description | Published |
20130145589 | METHOD OF MANUFACTURING LIQUID EJECTING HEAD, METHOD OF MANUFACTURING LIQUID EJECTING APPARATUS AND METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT - A method of manufacturing a liquid ejecting head includes forming a first electrode made of platinum, forming a buffer layer made of a compound having a pyrochlore structure that contains bismuth or platinum on the first electrode, forming an oxide layer made of an oxide containing bismuth on the buffer layer, forming a piezoelectric layer made of a compound having a perovskite structure that contains bismuth by burning the oxide layer, and forming a second electrode on the piezoelectric layer. | 06-13-2013 |
20130187990 | LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND PIEZOELECTRIC ELEMENT - A piezoelectric layer includes a buffer layer containing an oxide containing Bi and Co and disposed on an electrode, and a layer disposed on the buffer layer and containing a perovskite oxide containing Bi, Ba, Fe and Ti. A piezoelectric element includes the piezoelectric layer and the electrode. A liquid ejecting head includes a pressure generating chamber communicating with a nozzle aperture, and the piezoelectric element. A liquid ejecting apparatus includes the liquid ejecting head. | 07-25-2013 |
20130250010 | LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS AND PIEZOELECTRIC ELEMENT - A liquid ejecting head which discharges a liquid from a nozzle opening including a piezoelectric body layer and a piezoelectric element possessing an electrode which is arranged on the piezoelectric body layer, wherein the piezoelectric body layer consists of a complex oxide having a perovskite structure, and when 2θ is fixed within the range of 21.9° to 22.7° to scan in the direction of the χ-axis, the piezoelectric body layer has a peak in the range of 4.75° to 28.3° and when 2θ is fixed within the range of 31.1° to 32.6° to scan in the direction of the χ-axis, the piezoelectric body layer has a peak in the range of 24.8° to 40.75°. | 09-26-2013 |
20130271532 | LIQUID EJECTING HEAD AND PIEZOELECTRIC ELEMENT - A piezoelectric layer is formed with a perovskite type oxide at least containing Bi, Ba, Fe, and Ti and when, in 2θ-θ measurement using a two-dimensional detector, an angle formed by a plane including an incident X-ray, a sample, and the center position of the two-dimensional detector and a diffraction line diffracted from the sample is defined as χ and when, in a scattering intensity of the diffraction line obtained by measuring the piezoelectric layer, the integrated intensity in the range of 0°≦χ≦10° and 31°≦2θ≦33° is defined as I | 10-17-2013 |