Patent application number | Description | Published |
20080210167 | IMPURITY INTRODUCING APPARATUS AND IMPURITY INTRODUCING METHOD - It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively. | 09-04-2008 |
20080211408 | Plasma Display Panel and Method for Manufacturing Same - An object of the present invention is to provide a plasma display panel and a manufacturing method thereof that can prevent a dielectric layer and a protective layer from being deteriorated and give excellent image display performance, by performing a sealing process effectively. The object can be realized by a plasma display panel including a front panel | 09-04-2008 |
20080233723 | PLASMA DOPING METHOD AND APPARATUS - There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine. | 09-25-2008 |
20080258082 | Plasma Processing Method and Plasma Processing Apparatus - It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. | 10-23-2008 |
20080278055 | PLASMA DISPLAY PANEL AND METHOD FOR PRODUCING THE SAME - A plasma display panel comprising: a front panel comprising a first substrate, a first electrode, a first dielectric layer and a protective layer wherein the first electrode is formed on the first substrate, the first dielectric layer is formed over the first substrate so as to cover the first electrode, and the protective layer is formed on the first dielectric layer; and a rear panel comprising a second substrate, a second electrode, a second dielectric layer and a phosphor layer wherein the second electrode is formed on the second substrate, the second dielectric layer is formed over the second substrate so as to cover the second electrode, the phosphor layer is formed on the second dielectric layer, wherein the front panel and the rear panel are disposed so that the protective layer and the phosphor layer are opposed to each other, and thereby a discharge space is formed between the front panel and the rear panel; characterized in that at least the first dielectric layer has a carbon concentration of from 10 | 11-13-2008 |
20080318399 | PLASMA DOPING METHOD - A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. | 12-25-2008 |
20090035878 | Plasma Doping Method and Apparatus - There are provided a plasma doping method and apparatus which is excellent in a repeatability and a controllability of an implanting depth of an impurity to be introduced into a sample or a depth of an amorphous layer. | 02-05-2009 |
20090042321 | APPARATUS AND METHOD FOR PLASMA DOPING - Gas supplied to gas flow passages of a top plate from a gas supply device by gas supply lines forms flow along a vertical direction along a central axis of a substrate, so that the gas blown from gas blow holes can be made to be uniform, and a sheet resistance distribution is rotationally symmetric around a substrate center. | 02-12-2009 |
20090068769 | Method and Apparatus for Plasma Processing - An object of the invention is to provide a method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. | 03-12-2009 |
20090130335 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC WINDOW USED THEREIN, AND MANUFACTURING METHOD OF SUCH A DIELECTRIC WINDOW - A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window. The flow rates of gases that are introduced through the gas flow-out holes and the gas flow-out holes, respectively, can be controlled independently of each other, whereby the uniformity of processing can be increased. | 05-21-2009 |
20090140174 | Impurity Introducing Apparatus and Impurity Introducing Method - It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. | 06-04-2009 |
20090176355 | Plasma Doping Method and Plasma Processing Device - An object of the invention is to provide a plasma doping method excellent in the uniformity of concentration of impurities introduced into the surface of a sample and a plasma processing device capable of uniformly performing plasma processing of a sample. | 07-09-2009 |
20090181526 | Plasma Doping Method and Apparatus - An object of the invention is to provide a plasma doping method and a plasma doping apparatus in which uniformity of concentration of impurities introduced into a sample surface are excellent. | 07-16-2009 |
20090233383 | Plasma Doping Method and Apparatus - It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. | 09-17-2009 |
20090233385 | Plasma Doping Method and Plasma Doping Apparatus - Before a plasma doping process is performed, there is generated a plasma of a gas containing an element belonging to the same group in the periodic table as the primary element of a silicon substrate | 09-17-2009 |
20090263648 | METHOD OF FORMING METAL OXIDE FILM, METAL OXIDE FILM AND OPTICAL ELECTRONIC DEVICE - A metal oxide film forming method includes mixing an organic metal compound that is a liquid at room temperature and an organic solvent to form a paste, applying the paste onto a substrate, and oxidizing a metal element in the paste while vaporizing organic substances in the paste by irradiating atmospheric pressure plasma to the paste applied onto the substrate to form a metal oxide film. A metal oxide film composed of three layers is formed on a substrate such as a glass substrate. Such a structure can be obtained by repeating the steps of mixing the organic metal compound that is a liquid at room temperature and the organic solvent to form the paste, applying the paste onto the substrate, and oxidizing the metal element while vaporizing the organic substances in the paste. Also contemplated is an optical electronic device using the metal oxide film. | 10-22-2009 |
20090267511 | PLASMA DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A back face panel in a plasma display panel is provided with barrier-rib portions, fluorescent barrier-rib portions including a mixed material of a barrier-rib material and a phosphor material and formed on side faces thereof, and a phosphor portion including the phosphor material and formed in a manner so as to cover the fluorescent barrier-rib portions, and each of barrier ribs is formed by each barrier-rib portion and each fluorescent barrier-rib portion, while a phosphor layer is formed by each phosphor portion and each fluorescent barrier-rib portion. | 10-29-2009 |
20100009469 | PLASMA DOPING METHOD AND APPARATUS - During a plasma discharging process, a laser beam having a certain exciting wavelength is applied to a surface of a process substrate, so as to measure, using scattered light, an impurity density and a crystal state on the surface of the process substrate. | 01-14-2010 |
20100015877 | METHOD FOR PRODUCING PLASMA DISPLAY PANEL - A method for producing a plasma display panel, the method comprising the steps of: (i) preparing a front panel and a rear panel, the front panel being a panel wherein an electrode A, a dielectric layer A and a protective layer are formed on a substrate A, and the rear panel being a panel wherein an electrode B, a dielectric layer B, a partition wall and a phosphor layer are formed on a substrate B; (ii) applying a glass frit material onto a peripheral region of the substrate A or B, and then opposing the front and rear panels with each other such that the glass frit material is interposed therebetween; (iii) supplying a gas into a space formed between the opposed front and rear panels from a direction lateral to the opposed front and rear panels, under such a condition that the front and rear panels are heated; and (iv) melting the glass frit material to cause the front and rear panels to be sealed. | 01-21-2010 |
20100095889 | PLASMA DOPING APPARATUS - There are installed, on a surface of an window on a vacuum chamber side, an insulating side face portion, which extends radially from the center of a generating unit of a plasma generating device and is disposed so as to be orthogonal to a substrate mounting face of an electrode, and a conductive layer, which is made of a material identical to that for the substrate and placed in an area corresponding to the generating unit on the surface of the window on the vacuum chamber side. | 04-22-2010 |
20100098837 | PLASMA DOPING METHOD AND APPARATUS - It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. | 04-22-2010 |
20100289400 | PLASMA DISPLAY PANEL AND METHOD FOR PRODUCING THE SAME - A method for producing a plasma display panel comprising a front panel wherein an electrode, a dielectric layer and a protective layer are formed on a substrate of the front panel, a formation of the dielectric layer comprising: (i) preparing a dielectric material comprising a glass component, an organic solvent and silica particles; (ii) supplying the dielectric material onto the substrate having the electrode thereon, and then allowing the organic solvent contained in the supplied dielectric material to evaporate to form a dielectric precursor layer therefrom; (iii) heating the dielectric precursor layer to form a first dielectric layer therefrom; and (iv) heating the surface of the first dielectric layer as a local heat treatment to form a second dielectric layer to a limited depth from the surface of the first dielectric layer. | 11-18-2010 |
20100291829 | METHOD FOR PRODUCING PLASMA DISPLAY PANEL - A method for producing a plasma display panel, the method comprising: (i) preparing a front panel and a rear panel, the front panel being a panel wherein an electrode A, a dielectric layer A and a protective layer are formed on a substrate A, and the rear panel being a panel wherein an electrode B, a dielectric layer B, a partition wall and a phosphor layer are formed on a substrate B; (ii) applying a glass frit material onto a peripheral region of the substrate A or B to form an annular glass frit sealing portion; (iii) opposing the front and rear panels with each other such that the annular glass frit sealing portion is interposed therebetween; (iv) supplying a dry gas into a space formed between the opposed front and rear panels; and (v) melting the annular glass frit sealing portion to cause the front and rear panels to be sealed wherein, in the step (i), the protective layer of the front panel is made from a metal oxide comprising at least two oxides selected from among magnesium oxide, calcium oxide, strontium oxide and barium oxide, said metal oxide having a peak between the minimum diffraction angle and the maximum diffraction angle which are selected among the diffraction angles given by respective ones of said at least two oxides in a specific orientation plane in X-ray diffraction analysis; and the step (v) is performed together with the step (iv) wherein the dry gas is supplied such that the front and rear panels do not deform until the point in time when a softening point of the annular glass frit sealing portion is reached. | 11-18-2010 |
20110048631 | METHOD FOR PRODUCING PLASMA DISPLAY PANEL - A method for producing a plasma display panel, the method comprising: (i) preparing a front panel and a rear panel, the front panel being a panel wherein an electrode A, a dielectric layer A and a protective layer are formed on a substrate A, and the rear panel being a panel wherein an electrode B, a dielectric layer B, a partition wall and a phosphor layer are formed on a substrate B; and (ii) opposing the front and rear panels with each other, and sealing them along their peripheries by a sealing material wherein the protective layer is heated to a temperature ranging from 1600° C. to 3600° C. before the sealing of the front and rear panels. | 03-03-2011 |
20110049628 | SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, AND PLASMA DOPING SYSTEM - A fin-semiconductor region ( | 03-03-2011 |
20110171871 | METHOD FOR PRODUCING PLASMA DISPLAY PANEL - A method for producing a plasma display panel includes: (i) providing a front panel and a rear panel, the front panel being a panel wherein an electrode A, a dielectric layer A and a protective layer are formed on a substrate A, and the rear panel being a panel wherein an electrode B, a dielectric layer B, a barrier rib and a phosphor layer are formed on a substrate B; (ii) supplying a glass frit material onto a peripheral region of the substrate A or B to form a glass frit sealing member; (iii) opposing the front and rear panels with each other such that the glass frit sealing member is interposed therebetween; and (iv) heating the opposed front and rear panels to reach a softening point of the glass frit sealing member or a higher temperature than the softening point, while supplying a cleaning gas into a space formed between the opposed front and rear panels. Prior to the heating of step (iv), a gas is introduced into a space formed between the opposed front and rear panels, or a gas is exhausted from a space formed between the opposed front and rear panels. | 07-14-2011 |
20110198986 | PLASMA DISPLAY PANEL AND METHOD FOR PRODUCING THE SAME - Disclosed is a plasma display panel comprising a front panel wherein an electrode, a dielectric layer and a protective layer are formed on a substrate of the front panel; and a rear panel wherein an electrode, a dielectric layer and a barrier rib and a phosphor layer are formed on a substrate of the rear panel, the front panel and the rear panel being oppositely disposed to each other, wherein the electrode of the front panel is composed of a transparent electrode and a bus electrode; and the bus electrode comprises a melted-solidified portion obtained by a melting and subsequent solidifying of electrically-conductive particles. | 08-18-2011 |
20110217830 | PLASMA DOPING METHOD AND APPARATUS - There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine. | 09-08-2011 |
20110279030 | PLASMA DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A front plate and a back plate are superposed with each other in parallel, and pressed onto each other. Moreover, the back plate and a gas-blowing jig are brought into close contact with each other. The glass pipe in which a glass fiber filter paper is placed is pressed onto the back plate, with a solid-state glass frit ring interposed therebetween. Thus, by using a glass pipe, a nitrogen, Xe, or Ne gas is supplied into the panel, or the inside of the panel is evacuated. | 11-17-2011 |
20120058649 | PLASMA PROCESSING APPARATUS AND METHOD THEREOF - In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate. | 03-08-2012 |
20120115317 | PLASMA DOPING METHOD AND APPARATUS THEREOF - In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma. | 05-10-2012 |
20120186519 | PLASMA DOPING METHOD AND APPARATUS - A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased. | 07-26-2012 |
20120227808 | PROCESS FOR PRODUCTION OF SILICON POWDER, MULTI-CRYSTAL-TYPE SOLAR CELL PANEL, AND PROCESS FOR PRODUCTION OF THE SOLAR CELL PANEL - Disclosed is a process for producing a silicon powder, which comprises the steps of: powderizing a silicon ingot having a grade of 99.999% or more into a crude silicon powder having a particle diameter of 3 mm or less by means of high-pressure purified-water cutting; and reducing the crude silicon powder into a silicon powder having a particle diameter ranging from 0.01 to 10 [mu]m inclusive by means of at least one method selected from jet milling, wet granulation, ultrasonic wave disruption and shock wave disruption. The process is a technique for producing a silicon powder rapidly from a silicon ingot without reducing purity. | 09-13-2012 |
20120285818 | PLASMA DOPING METHOD WITH GATE SHUTTER - In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate. | 11-15-2012 |
20120325777 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment. | 12-27-2012 |
20130078457 | METHOD OF FORMING METAL OXIDE FILM, METAL OXIDE FILM AND OPTICAL ELECTRONIC DEVICE - A metal oxide film forming method includes mixing an organic metal compound that is a liquid at room temperature and an organic solvent to form a paste, applying the paste onto a substrate, and oxidizing a metal element in the paste while vaporizing organic substances in the paste by irradiating atmospheric pressure plasma to the paste applied onto the substrate to form a metal oxide film. A metal oxide film composed of three layers is formed on a substrate such as a glass substrate. Such a structure can be obtained by repeating the steps of mixing the organic metal compound that is a liquid at room temperature and the organic solvent to form the paste, applying the paste onto the substrate, and oxidizing the metal element while vaporizing the organic substances in the paste. Also contemplated is an optical electronic device using the metal oxide film. | 03-28-2013 |
20130081694 | POLYCRYSTALLINE-TYPE SOLAR CELL PANEL AND PROCESS FOR PRODUCTION THEREOF - Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot. | 04-04-2013 |
20130105460 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD | 05-02-2013 |
20130115780 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus has a circular chamber having an opening portion which serves as a plasma ejection port surrounded by a dielectric member, a gas supply pipe for introducing gas into the inside of the chamber, a coil provided in the vicinity of the chamber, a high-frequency power supply connected to the coil, and a base material mounting table. | 05-09-2013 |
20130146564 | PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD - A plasma treatment apparatus that includes a chamber having an opening portion which serves as a plasma ejection port surrounded by a dielectric member; a gas supply pipe that introduces gas into an inside of the chamber; a solenoid coil disposed in a vicinity of the chamber; a high-frequency power supply having a pulse modulation function which is connected to the solenoid coil; and a base material mounting table disposed on a plasma ejection port side. Plasma can be stably generated using the plasma treatment apparatus. | 06-13-2013 |
20130152995 | SOLAR CELL MODULE AND METHOD FOR PRODUCING THE SAME - A solar cell module which not only can ensure that rays of light in a satisfactory amount enter the solar cells but also can suppress the deterioration of the antireflection film in reflectance to surely achieve excellent durability. By forming, on the surface of a first antireflection film, a second antireflection film having a void ratio smaller than that of the first antireflection film, CO | 06-20-2013 |
20130160849 | POLYCRYSTALLINE SILICON SOLAR CELL PANEL AND MANUFACTURING METHOD THEREOF - An inexpensive polycrystalline silicon solar cell panel is provided by forming a polycrystalline silicon film in which pn junctions are formed by using fewer processes and in less time. Specifically, there is provided a manufacturing method for a polycrystalline silicon solar cell panel including: a process of forming an amorphous silicon film on a substrate surface using a vapor deposition method that uses an n-type or p-type doped vapor deposition material formed of silicon; a process of plasma-doping a surface layer of the amorphous silicon film with a p-type or n-type dopant; and a process of melting the amorphous silicon film by scanning the plasma-doped amorphous silicon film with plasma and performing re-crystallization. | 06-27-2013 |
20130174898 | THIN-FILM SOLAR CELL AND MANUFACTURING METHOD THEREOF - To improve the conversion efficiency of a thin film solar cell constituted by a pin junction-type thin film layer. Specifically, a thin film solar cell including a laminate which includes first diffusion layer made of semiconductor having p-type or n-type conductivity, a film-forming layer made of semiconductor having lower conductivity than the first diffusion layer, and second diffusion layer made of semiconductor having different polarity from the film-forming layer inside is provided. The first diffusion layer and the second diffusion layer have impurities distributed in a film-thickness direction with a concentration gradient. | 07-11-2013 |
20130183791 | SILICON SUBSTRATE HAVING TEXTURED SURFACE, SOLAR CELL HAVING SAME, AND METHOD FOR PRODUCING SAME - The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation ( | 07-18-2013 |
20130230990 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - According to the invention, there is provided a plasma processing apparatus which can generate plasma stably and efficiently, and can efficiently treat all of the desired regions to be treated of a base material within a short period of time. Provided is a plasma processing apparatus including an opening portion having an opening width of 1 mm or more; a dielectric member that defines a circular chamber constituting a circular space which communicates the opening; a gas supply pipe that introduces gas into an inside of the circular chamber; a coil that is provided in a vicinity of the circular chamber; a high-frequency power supply that is connected to the coil; and a base material mounting table on which a base material is disposed near the opening. | 09-05-2013 |
20130306134 | SOLAR CELL MODULE AND MANUFACTURING METHOD OF THE SAME - A solar cell module includes an antireflective film ( | 11-21-2013 |
20130323916 | PLASMA DOPING METHOD AND APPARATUS - A plasma doping apparatus which introduces a predetermined mass flow of gas from a gas supply device into a vacuum chamber while discharging the gas through an exhaust port by a turbo-molecular pump, which is an exhaust device in order to maintain the vacuum chamber under a predetermined pressure by a pressure adjusting valve. A high-frequency power source supplies high-frequency power of 13.56 MHz to a coil disposed in the vicinity of a dielectric window opposite a sample electrode in order to generate an inductively coupled plasma in the vacuum chamber. A sum of an area of an opening of a gas flow-off port opposed to a center portion of the sample electrode is configured to be smaller than that of an area of an opening of the gas flow-off port opposed to a peripheral portion of the sample electrode in order to improve the uniformity. | 12-05-2013 |
20130337641 | PLASMA DOPING METHOD AND APPARATUS - A plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine. | 12-19-2013 |
20140076516 | HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD - In a heat treatment apparatus, crystallization can be performed at a relatively low temperature, thereby limiting size of a crystal grain diameter even when a long period of time such as several dozen hours is taken. The heat treatment apparatus is provided with a first temperature mechanism having a heater heating a base material on the back side of the base material as well as a mechanism cooling the front surface of the base material by using coolant on the front surface side of the base material, a second temperature mechanism heating the front surface side of the base material by using any of atmospheric plasma unit, laser and a flash lamp, a third temperature mechanism having a heater heating the base material from the front surface side of the base material, in which the first to third temperature mechanisms are sequentially arranged in this order, and a movement mechanism relatively moves the first to third temperature mechanisms. | 03-20-2014 |
20140094040 | PLASMA PROCESSING METHOD - In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate. | 04-03-2014 |
20140220784 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus having a dielectric member that surrounds a circular chamber having a long shape and communicating with an opening portion having a long and linear shape, a gas supply pipe for introducing gas into an inside of the circular chamber, a coil provided in a vicinity of the circular chamber and having a long shape in parallel with a longitudinal direction of the opening portion, a high-frequency power supply connected to the coil, a base material mounting table that mounts a base material, and a moving mechanism that allows relative movement between the circular chamber and the base material mounting table in a perpendicular direction with respect to an longitudinal direction of the opening portion. | 08-07-2014 |
20140291290 | PLASMA PROCESSING APPARATUS AND METHOD THEREOF - In an inductive coupling type plasma torch unit, a solenoid coil is arranged in the vicinity of a first quartz block and a second quartz block, and a space inside a long chamber is annular. Plasma generated in the space inside the long chamber is jetted toward a base material from a plasma jetting port) as a slit-shaped opening in the long chamber. The base material is processed by relatively moving the long chamber and a base material holding mechanism holding the base material inside the annular chamber in a direction perpendicular to the longitudinal direction of the plasma jetting port. | 10-02-2014 |
20150053645 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - The plasma processing apparatus includes a dielectric member for defining a chamber, a gas introducing part for introducing a gas into the chamber, a discharge coil disposed on one side of the dielectric member and supplied with AC power to generate a plasma in the chamber into which the gas has been introduced, a conductor member disposed on the other side of the dielectric member and facing the discharge coil with the chamber of the dielectric member interposed therebetween, an AC power source for supplying AC voltage to the discharge coil, an opening communicating with the chamber and serving for applying the plasma to a substrate to be processed, and a moving mechanism for moving the substrate relative to the chamber so that the substrate passes across a front of the opening. The discharge coil is grounded or connected to the conductor member via a voltage generating capacitor or a voltage generating coil. | 02-26-2015 |