Patent application number | Description | Published |
20100219395 | Optical Semiconductor Device and Method of Manufacturing the Same - Devices and techniques related to UV light-emitting devices that can be implemented in ways that improve the light-emitting efficiency of an UV light-emitting device using a group III nitride semiconductor. | 09-02-2010 |
20110240962 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer. | 10-06-2011 |
20110298009 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An object of the present invention is to provide an epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 Ω·cm. | 12-08-2011 |
20120091435 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. | 04-19-2012 |
20120153440 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 Ω·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 Ω·cm or more. | 06-21-2012 |
20120168719 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, IN WHICH CURRENT FLOWS IN LATERAL DIRECTION AND METHOD OF PRODUCING THE SAME - To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact. | 07-05-2012 |
20120199661 | VEHICLE AIR CONDITIONER - Provided is a vehicle air conditioner which includes a simple water-proofing structure that is capable of preventing flooding of a vehicle cabin from mating surfaces, etc. of expansion-valve covers and top and bottom divided cases of an air conditioning unit (HVAC unit) without employing a water-proofing cover, or the like. In a vehicle air conditioner in which expansion-valve covers that are vertically divided into two parts are provided at an outer surface side of top and bottom divided cases of an air conditioning unit disposed in the vehicle cabin so as to bridge mating surfaces of the cases; an expansion valve can be disposed inside the expansion-valve covers; and, in addition, the interior of the expansion-valve covers communicates with an engine compartment via an opening provided in an toe board. | 08-09-2012 |
20120223328 | GROUP III NITRIDE EPITAXIAL LAMINATE SUBSTRATE - A Group III nitride epitaxial laminate substrate comprising a substrate, a buffer and a main laminate in this order, wherein the buffer includes an initial growth layer, a first superlattice laminate and a second superlattice laminate in this order, the first superlattice laminate includes five to 20 sets of first AlN layers and second GaN layers, the first AlN layers and the second GaN layers being alternately stacked, and each one set of the first AlN layer and the second GaN layer has a thickness of less than 44 nm, the second superlattice laminate includes a plurality of sets of first layers made of an AlN material or an AlGaN material and second layers made of an AlGaN material having a different band gap from the first layers, the first and second layers being alternately stacked. | 09-06-2012 |
20120273759 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 Ω·cm. | 11-01-2012 |
20130014913 | VEHICLE AIR-CONDITIONING APPARATUSAANM Hara; JunichiroAACI TokyoAACO JPAAGP Hara; Junichiro Tokyo JPAANM Shibata; TomohikoAACI TokyoAACO JPAAGP Shibata; Tomohiko Tokyo JP - Provided is a vehicle air-conditioning apparatus capable of setting a space formed between an upper surface of a heater core and a rotating shaft of an air mixing damper to a given axially-uniform space, thereby making the temperature adjustment easier and improving the temperature control performance. In a vehicle air-conditioning apparatus including an air mixing damper that has a rotating shaft disposed above an upper portion of a heater core, heater-core supporting parts that support only upper right and left shoulders of the heater core are provided on right and left side faces of a unit case, an upper surface of the heater core is supported by the heater-core supporting parts, and an space adjusting section that sets a space formed between the upper surface of the heater core and the rotating shaft of the air mixing damper to an axially-uniform space is provided on the air mixing damper. | 01-17-2013 |
20130087807 | EPITAXIAL GROWTH SUBSTRATE, SEMICONDUCTOR DEVICE, AND EPITAXIAL GROWTH METHOD - In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened. | 04-11-2013 |
20130193471 | III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A III nitride semiconductor light emitting device with improved light emission efficiency achieved without significantly increasing forward voltage by achieving both good ohmic contact between an electrode and a semiconductor layer, and sufficient functionality of a reflective electrode layer, and a method for manufacturing the same. The III nitride semiconductor light emitting device has a III nitride semiconductor laminate including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an n-side electrode, a p-side electrode; and a composite layer having a reflective electrode portion and a contact portion made of Al | 08-01-2013 |
20130336819 | CENTRIFUGAL BLOWER AND VEHICLE AIR CONDITIONER PROVIDED WITH THE SAME - A centrifugal blower includes a centrifugal fan; an electric motor that rotationally drives the centrifugal fan; a fan case that has an air inlet and an air outlet and that internally accommodates the centrifugal fan; and an electric motor case ( | 12-19-2013 |