Patent application number | Description | Published |
20090280049 | PURIFYING METHOD FOR METALLIC SILICON AND MANUFACTURING METHOD OF SILICON INGOT - In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period. | 11-12-2009 |
20100075036 | DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING FILM BY USING DEPOSITION APPARATUS - A vapor deposition device | 03-25-2010 |
20100196623 | FILM FORMING METHOD AND FILM FORMING APPARATUS - The present invention provides a film forming method and a film forming apparatus each of which is capable of forming films at low cost. The film forming method of the present invention includes the steps of (i) melting a solid material | 08-05-2010 |
20100272887 | THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD - To provide a thin film forming apparatus capable of uniformly and adequately cooling down a substrate. The thin film forming apparatus of the present invention forms a thin film on an elongated substrate in vacuum and includes: a cooling body | 10-28-2010 |
20110117279 | THIN FILM FORMING METHOD AND FILM FORMING APPARATUS - A thin film forming apparatus ( | 05-19-2011 |
20110268893 | THIN FILM MANUFACTURING DEVICE AND THIN FILM MANUFACTURING METHOD - The present invention provides a thin film manufacturing device capable of preventing crack damage of a crucible by, while maintaining a melt state of a film formation material in the crucible, tilting the crucible to discharge substantially the entire amount of film formation material from the crucible. The thin film manufacturing device of the present invention includes: a film forming source | 11-03-2011 |
20110269020 | ELECTROCHEMICAL ELEMENT ELECTRODE PRODUCING METHOD, ELECTROCHEMICAL ELEMENT ELECTRODE, AND ELECTROCHEMICAL ELEMENT - Provided is a method for easily and surely removing projections formed on the surface of an active material layer by a vacuum process when producing an electrochemical element electrode. Carried out to produce the electrochemical element electrode are: a first step of forming an active material layer on a current collector by a vacuum process, the active material layer being capable of storing and emitting lithium; a second step of storing the lithium in the active material layer; and a third step of removing projections on the surface of the active material layer storing the lithium. | 11-03-2011 |
20130014699 | DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING FILM BY USING DEPOSITION APPARATUS - A vapor deposition device including an evaporation source for evaporating a vapor-depositing material; a transportation section including first and second rolls for holding the substrate in the state of being wound therearound and a guide section for guiding the substrate; and a shielding section, located in a vapor deposition possible zone, for forming a shielded zone which is not reachable by the vapor-depositing material from the evaporation source. Vapor deposition zones include a planar transportation zone for transporting the substrate such that the surface of the substrate to be subjected to the vapor-depositing material is planar; and the transportation section is located with respect to the evaporation source such that the vapor-depositing material is not incident on the substrate in a direction of the normal to the substrate in the vapor deposition possible zone excluding the shielded zone. | 01-17-2013 |