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Tomasini
John Tomasini, Richfield, WI US
| Patent application number | Description | Published |
|---|---|---|
| 20120046020 | System and Method for Deactivating Mobile Communication Devices within a Vehicle - A system and method of deactivating complete functionality of mobile communication devices while in a moving automobile. The system comprises a series of integrated chips that communicate vehicle status to a universal cell phone mount, which communicates to corresponding cell phones within the vehicle. While the vehicle is in a state of motion or when the transmission is not in ‘Park’, all mobile communication functions are prohibited except that phone placed in the universal mount, which allows hands free and voice entry command via the vehicle sound system. The goal is to reduce the use of cell phones and other mobile devices while operating a motor vehicle, improving roadway safety for all drivers. | 02-23-2012 |
Micaela Gabriella Tomasini, Milano IT
| Patent application number | Description | Published |
|---|---|---|
| 20120302052 | Methods of Forming Electrical Contacts - Some embodiments include methods of forming contacts. A row of projections may be formed over a semiconductor substrate. The projections may include a plurality of repeating components of an array, and a terminal projection. The terminal projection may have a sacrificial material spaced from semiconductor material of the substrate by a dielectric structure. An electrically conductive line may be formed along the row. The line may wrap around an end of the terminal projection and bifurcate into two branches that are along opposing sides of the repeating components. The individual branches may have regions spaced from the sacrificial material by segments of gate dielectric. The sacrificial material may be removed, together with the segments of gate dielectric, to form a contact opening. An electrically conductive contact may be formed within the contact opening and directly against the regions of the branches. | 11-29-2012 |
Pierre Tomasini, Phoenix, AZ US
| Patent application number | Description | Published |
|---|---|---|
| 20100006024 | EPITAXIAL SEMICONDUCTOR DEPOSITION METHODS AND STRUCTURES - Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer. | 01-14-2010 |
Pierre Tomasini, Tempe, AZ US
| Patent application number | Description | Published |
|---|---|---|
| 20090026496 | METHODS OF MAKING SUBSTITUTIONALLY CARBON-DOPED CRYSTALLINE SI-CONTAINING MATERIALS BY CHEMICAL VAPOR DEPOSITION - Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition. | 01-29-2009 |
| 20090075029 | STRESSOR FOR ENGINEERED STRAIN ON CHANNEL - A semiconductor substrate having recesses filled with heteroepitaxial silicon-containing material with different portions having different impurity concentrations. Strained layers can fill recessed source/drain regions in a graded, bottom-up fashion. Layers can also line recess sidewalls with one concentration of strain-inducing impurity and fill the remainder to the recess with a lower concentration of the impurity. In the latter case, the sidewall liner can be tapered. | 03-19-2009 |
| 20090111246 | INHIBITORS FOR SELECTIVE DEPOSITION OF SILICON CONTAINING FILMS - A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate. | 04-30-2009 |
| 20090117717 | METHODS OF SELECTIVELY DEPOSITING SILICON-CONTAINING FILMS - An embodiment provides a method for selectively depositing a single crystalline film. The method includes providing a substrate, which includes a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surface morphology. A silicon precursor and BCl | 05-07-2009 |
| 20090189185 | EPITAXIAL GROWTH OF RELAXED SILICON GERMANIUM LAYERS - A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 10 threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a “crosshatch free” surface. | 07-30-2009 |
| 20120211870 | III-V SEMICONDUCTOR STRUCTURES WITH DIMINISHED PIT DEFECTS AND METHODS FOR FORMING THE SAME - Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. An In-III-V semiconductor layer is grown with an Indium concentration above a saturation regime by adjusting growth conditions such as a temperature of a growth surface to create a super-saturation regime wherein the In-III-V semiconductor layer will grow with a diminished density of V-pits relative to the saturation regime. | 08-23-2012 |
| 20120225539 | DEPOSITION METHODS FOR THE FORMATION OF III/V SEMICONDUCTOR MATERIALS, AND RELATED STRUCTURES - Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, the layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods. | 09-06-2012 |
Ralf Tomasini, Haldenwang DE
| Patent application number | Description | Published |
|---|---|---|
| 20090117946 | Cradle For Mobile Phones - The invention relates to a cradle for a mobile phone, comprising a rear bearing surface; left and right side walls; two guide rails being located on the front side of said left and right side walls and protruding laterally from said side walls; a bottom part comprising a connector element for mechanically and electrically engaging a bottom connector of said mobile phone, said rear bearing surface, said side walls and said guide rails define left and right slots extending parallel to said side walls for receiving left and right side sections of a mobile phone; guiding a phone being inserted into said cradle to said bottom part; and retaining a mobile phone received in said cradle against forces acting in a direction substantially perpendicular to said slots; and said connector element comprises means for locking onto a bottom connector of a mobile phone received in said cradle for retaining said mobile phone inside said cradle. | 05-07-2009 |
| 20120295667 | CRADLE FOR MOBILE PHONES - A cradle for a mobile phone includes a rear bearing surface; left and right side walls; two guide rails being located on the front side of the left and right side walls and protruding laterally from the side walls; a bottom part comprising a connector element for mechanically and electrically engaging a bottom connector of the mobile phone, the rear bearing surface, said side walls and the guide rails define left and right slots extending parallel to the side walls for receiving left and right side sections of a mobile phone; guiding a phone being inserted into the cradle to the bottom part; and retaining a mobile phone received against forces acting in a direction substantially perpendicular to the slots; how to lock the connector element onto a bottom connector of a mobile phone received in the cradle for retaining the mobile phone inside the cradle is shown. | 11-22-2012 |