Patent application number | Description | Published |
20120269962 | PROCESS FOR PASSIVATING DIELECTRIC FILMS - Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer. | 10-25-2012 |
20130095664 | ATOMIC LAYER DEPOSITION OF ANTIMONY OXIDE FILMS - Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl | 04-18-2013 |
20130108877 | CRYSTALLINE STRONTIUM TITANATE AND METHODS OF FORMING THE SAME | 05-02-2013 |
20140193579 | Combination CVD/ALD method and source - The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor fed is split in to two paths from a precursor source. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. | 07-10-2014 |
20140273452 | DEPOSITION OF SMOOTH METAL NITRIDE FILMS - In one aspect, methods of forming smooth ternary metal nitride films, such as Ti | 09-18-2014 |
20140273510 | SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS - Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film. | 09-18-2014 |
20150099066 | Combination CVD/ALD method, source and pulse profile modification - The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified. The pulse profile can be modified to create a low or very low partial pressure pulse profile at the beginning of a pulse. | 04-09-2015 |
20150249005 | ATOMIC LAYER DEPOSITION OF ANTIMONY OXIDE FILMS - Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl | 09-03-2015 |