| Patent application number | Description | Published |
|---|
| 20080224122 | Semiconductor Nanowire and Semiconductor Device Including the Nanowire - A nanowire ( | 09-18-2008 |
| 20080246020 | Nanowire, method for fabricating the same, and device having nanowires - A nanowire according to the present invention includes: a nanowire body made of a crystalline semiconductor as a first material; and a plurality of fine particles, which are made of a second material, including a constituent element of the semiconductor, and which are located on at least portions of the surface of the nanowire body. The surface of the nanowire body is smooth. | 10-09-2008 |
| 20080303029 | Structure, Semiconductor Device, Tft Driving Circuit, Panel, Display and Sensor for Maintaining Microstructure, Methods for Fabricating the Structure, the Semiconductor Device, the Tft Driving Circuit, the Panel, the Display and the Sensor - A method for fabricating a structure according to the present invention includes the steps of: forming a groove in a substrate, dropping a solution in which microstructures such as nanowires are dispersed into the groove and the step of evaporating the solution to arrange the microstructures in the groove in a self-organizing manner. | 12-11-2008 |
| 20100012921 | NANOWIRE, DEVICE COMPRISING NANOWIRE, AND THEIR PRODUCTION METHODS - A nanowire according to the present invention includes: a nanowire body made of a first material; and a plurality of semiconductor particle made of a second material and being contained in at least a portion of the interior of the nanowire body. | 01-21-2010 |
| 20100133509 | SEMICONDUCTOR NANOWIRE AND ITS MANUFACTURING METHOD - A method for fabricating a semiconductor nanowire that has first and second regions is provided. A catalyst particle is put on a substrate. A first source gas is introduced, thereby growing the first region from the catalyst particle via a vapor-liquid-solid phase growth. A protective coating is formed on a sidewall of the first region, and a second source gas is introduced to grow the second region extending from the first region via the liquid-solid-phase growth. | 06-03-2010 |
| 20100224915 | METHOD FOR PRODUCING SEMICONDUCTOR CHIP, AND FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME - According to a method of the present invention for manufacturing a semiconductor piece, at least two semiconductor layers ( | 09-09-2010 |
| 20110244645 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film. | 10-06-2011 |
| 20120032179 | THIN-FILM TRANSISTOR ARRAY DEVICE, ORGANIC EL DISPLAY DEVICE, AND METHOD OF MANUFACTURING THIN-FILM TRANSISTOR ARRAY DEVICE - A thin-film transistor array device includes: a driving TFT including a first crystalline semiconductor film including crystal grains having a first average grain size; and a switching TFT including a second crystalline semiconductor film including crystal grains having a second average grain size that is smaller than the first average grain size. The first crystalline semiconductor film and the second crystalline semiconductor film are formed at the same time by irradiating a noncrystalline semiconductor film using a laser beam having a Gaussian light intensity distribution such that a temperature of the noncrystalline semiconductor film is within a range of 600° C. to 1100° C., and the first crystalline semiconductor film is formed such that the temperature of the noncrystalline semiconductor film is within a temperature range of 1100° C. to 1414° C. due to latent heat generated by the laser irradiation. | 02-09-2012 |
