Patent application number | Description | Published |
20100213519 | MANUFACTURING METHOD OF SILICON SPIN TRANSPORT DEVICE AND SILICON SPIN TRANSPORT DEVICE - An object of the present invention is to provide a silicon spin transport device manufacturing method and silicon spin transport device whereby improved voltage output characteristics can be obtained. The silicon spin transport device manufacturing method comprises: a first step of patterning a silicon film by wet etching and forming a silicon channel layer; and a second step of forming a magnetization free layer and a magnetization fixed layer, which are apart from each other, on the silicon channel layer. | 08-26-2010 |
20100314702 | SPIN TRANSPORT DEVICE - A spin transport device is provided, which includes a channel comprised of a semiconductor material, a magnetization fixed layer arranged on the channel via a first insulating layer, a magnetization free layer arranged on the channel via a second insulating layer, and first and second electrodes arranged on the channel, wherein carrier densities of a first region of the channel including a contact surface with the first insulating layer, a second region of the channel including a contact surface with the second insulating layer, a third region of the channel including an opposite surface to the first electrode, and a fourth region of the channel including an opposite surface to the second electrode are higher than an average carrier density of the whole channel. Accordingly, a spin transport device that can realize good spin transportation and electric resistance characteristics while suppressing the scattering of spin can be provided. | 12-16-2010 |
20100327333 | SPIN TRANSPORT DEVICE - A spin transport device which comprises a channel, first and second insulating layers, a magnetization fixed layer, a magnetization free layer, first and second wirings, and satisfies at least one of following conditions A and B, Condition A: The first wiring includes a vertical portion which extends in a thickness direction of the magnetization fixed layer on the magnetization fixed layer, and a horizontal portion which extends from the vertical portion that is apart from the magnetization fixed layer side in a direction crossing the thickness direction of the magnetization fixed layer, and Condition B: The second wiring includes a vertical portion which extends in a thickness direction of the magnetization free layer on the magnetization free layer, and a horizontal portion which extends from the vertical portion that is apart from the magnetization free layer side in a direction crossing the thickness direction of the magnetization free layer. | 12-30-2010 |
20110204886 | MAGNETIC SENSOR, MAGNETIC DETECTOR, AND MAGNETIC HEAD - A magnetic sensor comprises a first ferromagnetic body, a second ferromagnetic body, a channel extending from the first ferromagnetic body to the second ferromagnetic body, a magnetic shield covering the channel, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the channel. | 08-25-2011 |
20110205666 | MAGNETIC SENSOR, MAGNETIC DETECTOR, AND MAGNETIC HEAD - A magnetic sensor comprises a channel, a ferromagnetic body and first and second reference electrodes on the channel, a magnetic shield covering a part of the channel opposing the ferromagnetic body, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the part of the channel opposing the ferromagnetic body. | 08-25-2011 |
20120038355 | MAGNETIC SENSOR AND MAGNETIC DETECTION APPARATUS - A magnetic sensor is provided with a channel of a semiconductor, a first insulating film and a metal body arranged opposite to each other with the channel in between, a ferromagnet provided on the first insulating film, a first reference electrode connected to the metal body, a second reference electrode connected to the metal body, a magnetic shield covering a portion opposed to the ferromagnet in the channel, and a second insulating film provided between the channel and the magnetic shield. The magnetic shield has a through hole extending toward the portion opposed to the ferromagnet in the channel. | 02-16-2012 |
20120056254 | SPIN INJECTION ELECTRODE STRUCTURE, SPIN TRANSPORT ELEMENT, AND SPIN TRANSPORT DEVICE - The present invention provides a spin injection electrode structure, a spin transport element, and a spin transport device which enable effective spin injection in a silicon channel layer at room temperature. A spin injection electrode structure IE comprises a silicon channel layer | 03-08-2012 |
20120074510 | MAGNETIC SENSOR AND MAGNETIC HEAD - A magnetic sensor | 03-29-2012 |
20120211848 | SPIN TRANSPORT TYPE MAGNETIC SENSOR - The magnetic sensor includes a base substrate having a magnetic shield layer; a single-domain semiconductor crystal layer attached via an insulating film on the magnetic shield layer of the base substrate; a first ferromagnetic layer formed on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a first tunnel barrier layer; and a second ferromagnetic layer formed, at a distance from the first ferromagnetic layer, on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a second tunnel barrier layer. | 08-23-2012 |
20120228683 | SPIN DEVICE, AND MAGNETIC SENSOR AND SPIN FET USING THE SAME - This spin device includes a semiconductor layer | 09-13-2012 |
20120241883 | SPIN TRANSPORT DEVICE AND MAGNETIC HEAD - The present invention provides a spin transport device having lowered areal resistance in its tunneling layer and a magnetic head. The spin transport device (magnetic sensor | 09-27-2012 |
20120267734 | SPIN TRANSPORT DEVICE - A spin transport device includes a semiconductor layer | 10-25-2012 |
20130258524 | SPIN CONDUCTION ELEMENT AND MAGNETIC SENSOR AND MAGNETIC HEAD USING SPIN CONDUCTION - A spin conduction element includes a main channel layer having a first electrode, a second electrode, a third electrode, a fourth electrode, a fifth electrode, and a sixth electrode, and extending in a first direction. Spins are injected into the main channel layer from a second ferromagnetic layer constituting the second electrode and a fourth ferromagnetic layer constituting the fourth electrode, and a spin current is detected as a voltage in a third ferromagnetic layer constituting the third electrode. | 10-03-2013 |
20150035524 | MAGNETIC SENSOR, MAGNETIC HEAD, AND BIOMAGNETIC SENSOR - A magnetic sensor includes a channel layer, a magnetization free layer placed on a first section of the channel layer, and a magnetization-fixed layer placed on a second section of the channel layer. A thickness of the channel layer of the first section is different from a thickness of the channel layer of the second section and a resistance of an interface between the channel layer and the magnetization free layer is lower than a resistance of an interface between the channel layer and the magnetization-fixed layer. | 02-05-2015 |