Patent application number | Description | Published |
20090233394 | Led with substrate modifications for enhanced light extraction and method of making same - The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching. | 09-17-2009 |
20100025719 | BOND PAD DESIGN FOR ENHANCING LIGHT EXTRACTION FROM LED CHIPS - An improved bond pad design for increased light extraction efficiency for use in light emitting diodes (LEDs) and LED packages. Embodiments of the present invention incorporate a structure that physically isolates the bond pads from the primary emission surface, forcing the current to flow away from the bond pads first before traveling down into the semiconductor material toward the active region. This structure reduces the amount of light that is generated in the area near the bond pads, so that less of the generated light is trapped underneath the bond pads and absorbed. | 02-04-2010 |
20100140635 | Composite high reflectivity layer - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED. | 06-10-2010 |
20100140637 | Light Emitting Diode with a Dielectric Mirror having a Lateral Configuration - A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure. | 06-10-2010 |
20100273280 | LED WITH SUBSTRATE MODIFICATIONS FOR ENHANCED LIGHT EXTRACTION AND METHOD OF MAKING SAME - The surface morphology of an LED light emitting surface is changed by applying processes, such as a reactive ion etch (RIE) process to the light emitting surface. In one embodiment, the changed surface morphology takes the form of a moth-eye surface. The surface morphology created by the RIE process may be emulated using different combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching. | 10-28-2010 |
20110049546 | HIGH REFLECTIVITY MIRRORS AND METHOD FOR MAKING SAME - A composite high reflectivity mirror (CHRM) with at least one relatively smooth interior surface interface. The CHRM includes a composite portion, for example dielectric and metal layers, on a base element. At least one of the internal surfaces is polished to achieve a smooth interface. The polish can be performed on the surface of the base element, on various layers of the composite portion, or both. The resulting smooth interface(s) reflect more of the incident light in an intended direction. The CHRMs may be integrated into light emitting diode (LED) devices to increase optical output efficiency. | 03-03-2011 |
20110169030 | LIGHT EMITTING DIODE WITH HIGH ASPECT RATIO SUBMICRON ROUGHNESS FOR LIGHT EXTRACTION AND METHODS OF FORMING - The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device. | 07-14-2011 |
20110169036 | COMPOSITE HIGH REFLECTIVITY LAYER - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED. | 07-14-2011 |
20120080688 | ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES - A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode. | 04-05-2012 |
20120280263 | COMPOSITE HIGH REFLECTIVITY LAYER - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED or package to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises a LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. One embodiment of a LED package comprises a LED mounted on a substrate with an encapsulant over said LED and a composite high reflectivity layer arranged to reflect emitted light. The composite layer comprises a plurality of layers such that at least one of said plurality of layers has an index of refraction lower than the encapsulant and a reflective layer on a side of said plurality of layers opposite the LED. In some embodiments, conductive vias are included through the composite layer to allow an electrical signal to pass through the layer to the LED. | 11-08-2012 |
20140034987 | COMPOSITE HIGH REFLECTIVITY LAYER - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED. | 02-06-2014 |
20140203320 | COMPOSITE HIGH REFLECTIVITY LAYER - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED. | 07-24-2014 |
Patent application number | Description | Published |
20080205325 | METHOD AND SYSTEM FOR ASSOCIATION IN RELAY NETWORK - A method and system for association in a relay network are disclosed; a neighbor Base Station (BS) receives a ranging request from an associated neighbor station and the ranging request is received by the associated neighbor station from an MS; the neighbor BS sends a ranging response to the MS in response to the ranging request; the associated neighbor station is an RS. Association Level 1 is implemented. Another method and system for association in a relay system are disclosed; a neighbor BS receives a ranging report from an associated neighbor station after the associated neighbor station receives a CDMA code from an MS; the neighbor BS sends the ranging report to the MS or to a serving BS by which the ranging report is sent to the MS; the associated neighbor station is an RS. Association Level 2 is implemented. | 08-28-2008 |
20090245165 | METHOD AND SYSTEM FOR RESOURCE SCHEDULING IN WIRELESS SYSTEM - A method for resource scheduling in a wireless system, applicable to a multi-hop network, includes a MS acquiring bandwidth granted by an MS synchronous station, and transmitting data to the MS synchronous station with the bandwidth. Each node between the MS and an MMR-BS acquires bandwidth granted by the superordinate node of the node between granting the bandwidth to the subordinate node of the node and receiving the data from the subordinate node, and transmits the data to the superordinate node of the node with the bandwidth granted by the superordinate node of the node after receiving the data from the subordinate node. | 10-01-2009 |
20100098029 | METHOD, BASE STATION AND RELAY STATION FOR SUPPORTING MOBILE STATION RANGING - A method for supporting MS ranging is provided in an embodiment of the present invention. The method includes: determining the public frame that is to be used for allocating the dedicated initial ranging transmission opportunity information; and notifying the MS of information about the determined public frame to potential target RSs. A BS and an RS are provided in embodiments of the present invention. This invention helps determine a public frame that is to be used for allocating the dedicated initial ranging transmission opportunity information for an MS in an MR radio telecommunication system, when the potential target BSs of the MS include RSs. | 04-22-2010 |
20100110974 | BANDWIDTH REQUEST METHOD AND RELAY STATION - The present invention provides a bandwidth method and a relay station (RS). After receiving the bandwidth request message sent by subordinate network entity, RS judges whether it has available bandwidth; if it has available bandwidth, sending a bandwidth request message to superordinate network entity based on the available bandwidth; otherwise, requesting bandwidth from superordinate network entity using CDMA ranging codes. | 05-06-2010 |
20100278097 | METHOD, SYSTEM AND DEVICE FOR MOBILE STATION HANDOVER - A method, system and device for MS handover are provided in an embodiment of the present invention. The method includes: receiving the handover-assisting information from the RS by the serving MR-BS; determining whether to recommend the RS to the MS as the target station according to the handover-assisting information by the serving MR-BS. The embodiments of the present invention enable the serving MR-BS to obtain related information from the RS and the serving MR-BS of the MS to better ascertain the potential target station and related information to be recommended to the MS. This helps improve the handover performance of the MS and reduce the failure rate. | 11-04-2010 |
Patent application number | Description | Published |
20110201118 | NUCLEASE ACTIVITY OF TAL EFFECTOR AND FOKI FUSION PROTEIN - The present invention provides compositions and methods for targeted cleavage of cellular chromatin in a region of interest and/or homologous recombination at a predetermined site in cells. Compositions include fusion polypeptides comprising a TAL effector binding domain and a cleavage domain. The cleavage domain can be from any endonuclease. In certain embodiments, the endonuclease is a Type IIS restriction endonuclease. In further embodiments, the Type IIS restriction endonuclease is FokI. | 08-18-2011 |
20150017728 | MONOMER ARCHITECTURE OF TAL NUCLEASE OR ZINC FINGER NUCLEASE FOR DNA MODIFICATION - The present invention provides compositions and methods for targeted cleavage of cellular chromatin in a region of interest and/or homologous recombination at a predetermined site in cells. Compositions include fusion polypeptides comprising a TAL effector binding or a zinc finger domain and an I-TevI homing endonuclease cleavage domain as well as nucleic acid sequence encoding the same. The use of the I-TevI domain allows for monomer endonuclease sequences to achieve cleavage of cellular chromatin and represents an advantage over prior endonucleases which require self-dimerization, and two nucleases with appropriate spacers. | 01-15-2015 |
20150247162 | GENETICALLY MODIFIED PLANTS WITH RESISTANCE TO XANTHOMONAS AND OTHER BACTERIAL PLANT PATHOGENS - Applicants have successfully generated heritable phenotypes in plants making them resistant to bacterial blight. TAL effector binding elements, (EBEs) of bacterial pathogen disease susceptibility genes are modified to prevent induction of expression associated with disease states caused by the bacterial pathogens. Surprisingly, Applicants have found that modifications may be made in the EBEs of these genes which prevent bacterial pathogen induction, but still allow for normal plant development and seed production. Nucleic acid sequences for generating such plants, amino acid sequences, cells, vectors and expression constructs are included as well as resistant plants, seeds and lines. | 09-03-2015 |
Patent application number | Description | Published |
20110279295 | PIPELINED ANALOG-TO-DIGITAL CONVERTER AND ITS SINGLE REDUNDANCY BIT DIGITAL CORRECTION TECHNIQUE - The present invention pertains to the technical field of A/D converter, to be more specific, a pipeline A/D converter and its single redundancy bit digital correction. The related single redundancy bit digital correction features the following steps: substages except for the last one quantizes input voltage, calculates the residual voltage, which is amplified and shifted to the middle part of the reference voltage range, and outputs to the following substage until the last one, which only quantizes the input voltage; The code and offset code of each substage, corresponding to the quantized thermometer code is calculated; the offset codes of all stages are added by weight to get total offset code; codes of all substages are added by weight, to which the total offset code is added. The comparator offset error is corrected to obtain an output code; the present invention released the A/D converter that applies the foregoing digital correction; the present invention is capable of reducing the number of substages of high speed and high resolution pipeline A/D converter and identifying the negative or positive overflows of input signals. | 11-17-2011 |
20130328620 | VOLTAGE REFERENCE CIRCUIT BASED ON TEMPERATURE COMPENSATION - The present invention pertains to a voltage reference circuit based on temperature compensation, comprising positive and negative temperature coefficient generating units, temperature compensation circuit, image circuit and voltage divider. In this circuit, Item T is compensated with Item T, and Item T ln(T) is compensated by Item T in (T), which features a well-targeted compensation performance. The circuit outputs a reference voltage with zero temperature coefficient, which is independent to T and T ln (T). The output voltage value could be defined by adjusting the ratio of resistance in voltage divider. The invention provides a voltage reference circuit featuring good compensation, zero temperature coefficient and adjustable output voltage. The invention has a better compensation than the conventional one and a fixed output voltage, and it totally eliminates the temperature coefficient. The invention has wide application in analog IC and digital/analog mixed IC. | 12-12-2013 |
20150137854 | HIGH SPEED SAMPLING FRONT-END CIRCUIT - A high-speed sampling front-end circuit is presented that includes a MDAC sampling network, a reference voltage generator circuit, a comparator array, an operational amplifier, an output short-circuit switch, an adjustable clock duty cycle stabilizer, a status control module and a feedback control module. The circuit features low power, high sampling rate and high input bandwidth of sampling network. The time constant of the MDAC sampling network and the comparator array is precisely matched one another to improve input bandwidth of the sampling network. Sampling capacitors are designed as feedback capacitors and DAC calculation capacitors, thereby the operational amplifier doubles feedback coefficient and features 50% bandwidth and 50% power. The cycle stabilizer is adopted to shorten sampling time and extend amplification phase to greatly improve sampling rate. One input reference voltage tends to simplify the design of the reference voltage generator circuit. The circuit has wide applications in pipelined A/D converters. | 05-21-2015 |
Patent application number | Description | Published |
20130338978 | GENERATING FACIES PROBABLITY CUBES - A method for generating one or more geological models for oil field exploration. The method includes receiving one or more well facies logs, a vertical facies proportion curve, a lateral proportion map, a variogram model and a global target histogram. The method then includes generating a facies probability cube using a modified Sequential Gaussian Simulation (SGSIM) algorithm, the well facies logs, the vertical facies proportion curve, the lateral proportion map and the variogram model. After generating the facies probability cube, the method includes matching the facies probability cube to the global histogram and generating the geological models based on the matched facies probability cube. | 12-19-2013 |
20140025842 | BACNET MS/TP AUTOMATIC MAC ADDRESSING - A building automation and control network (BACnet) master-slave/token-passing (MS/TP) automatic media access control (MAC) addressing system having a BACnet MS/TP network, a MAC assigner on the network, and one or more MAC assignees on the network. Each assignee may have a global unique identity (GUID) and the assigner may have a pre-defined address. The assigner may gather virtually all GUIDs of the MAC assignees on the network and gather virtually all unused MAC addresses on the network. The assigner may map GUIDs to the unused MAC addresses and send a resulting map to the MAC assignees for assignment of a MAC address to each assignee. Each assignee may be assigned a MAC address according to its GUID, and the assignment of a MAC address to each assignee may occur automatically without manual intervention. In other words, the system may provide auto MAC addressing. | 01-23-2014 |
Patent application number | Description | Published |
20150313871 | Methods of Treating Portal Hypertension - The present invention provides methods for treating or preventing portal hypertension comprising administering to a patient in need of such treatment or prevention at least one Rev-erb modulating agent (REMA) in an amount effective to treat or prevent said portal hypertension. The REMA can be SR6452 or a related compound, such as SR9009 or SR9011. The amount of the REMA administered can comprises a quantity sufficient to modulate Rev-erbα expression, activity, and/or subcellular location and/or to inhibit or reverse hepatic stellate cell (HSC) activation and contractility. | 11-05-2015 |
20150328186 | Methods of Treating Hepatic Fibrosis and Associated Diseases by Regulating Rev-ERB Activity - The present invention is directed to compositions and associated methods for treatment, prevention, amelioration, and/or delaying the onset of hepatic fibrosis and/or associated diseases. The methods preferably involve regulating at least one of Rev-erbα expression, activity, and subcellular localization. In particular, certain embodiments of the present invention relate to compositions and methods of using a Rev-erb-modulating agent (REMA) for the treatment or prevention of hepatic fibrosis and/or associated diseases. Preferably, the amount of a REMA administered comprises a quantity sufficient to modulate at least one of Rev-erbα expression, activity, and subcellular localization and reduce the activation of hepatic stellate cells (HSCs). | 11-19-2015 |