Patent application number | Description | Published |
20090061647 | CURING METHODS FOR SILICON DIOXIDE THIN FILMS DEPOSITED FROM ALKOXYSILANE PRECURSOR WITH HARP II PROCESS - Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods may also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may also include removing the acidic vapor from the semiconductor processing chamber. Systems to deposit a silicon oxide layer on a substrate are also described. | 03-05-2009 |
20090139568 | Crystalline Solar Cell Metallization Methods - Embodiments of the invention contemplate formation of a low cost solar cell using novel methods and apparatus to form a metal contact structure. The method generally uses a conductive contact layer that enables formation of a good electrical contact to the solar cell device. In one case, the contact layer is a nickel containing layer. Various deposition techniques may be used to form the metal contact structure. | 06-04-2009 |
20090142880 | Solar Cell Contact Formation Process Using A Patterned Etchant Material - Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active region(s) and the metal contact structure of a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define point contacts through a blanket dielectric layer covering a surface of a solar cell substrate. The method generally includes depositing an etchant material that enables formation of a desired pattern in a dielectric layer through which electrical contacts to the solar cell device can be formed. | 06-04-2009 |
20090233453 | METHODS FOR OXIDATION OF A SEMICONDUCTOR DEVICE - Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas. | 09-17-2009 |
20100015756 | HYBRID HETEROJUNCTION SOLAR CELL FABRICATION USING A DOPING LAYER MASK - Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer. | 01-21-2010 |
20100051085 | BACK CONTACT SOLAR CELL MODULES - Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. Methods of forming the high efficiency solar cell may include the use of a prefabricated back plane that is bonded to the metalized solar cell device to form an interconnected solar cell module. Solar cells most likely to benefit from the invention including those having active regions comprising single or multicrystalline silicon with both positive and negative contacts on the rear side of the cell. | 03-04-2010 |
20100055822 | BACK CONTACT SOLAR CELLS USING PRINTED DIELECTRIC BARRIER - Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure. | 03-04-2010 |
20100107927 | ELECTROLESS DEPOSITION PROCESS ON A SILICON CONTACT - Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer. | 05-06-2010 |
20110104850 | SOLAR CELL CONTACT FORMATION PROCESS USING A PATTERNED ETCHANT MATERIAL - Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active region(s) and the metal contact structure of a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define point contacts through a blanket dielectric layer covering a surface of a solar cell substrate. The method generally includes depositing an etchant material that enables formation of a desired pattern in a dielectric layer through which electrical contacts to the solar cell device can be formed. | 05-05-2011 |
20110183458 | FORMING SOLAR CELLS USING A PATTERNED DEPOSITION PROCESS - Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure. | 07-28-2011 |
20110217850 | METHODS FOR OXIDATION OF A SEMICONDUCTOR DEVICE - Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas. | 09-08-2011 |
20110272008 | OXIDE NITRIDE STACK FOR BACKSIDE REFLECTOR OF SOLAR CELL - Embodiments of the invention generally provide methods for forming a multilayer rear surface passivation layer on a solar cell substrate. The method includes forming a silicon oxide sub-layer having a net charge density of less than or equal to 2.1×10 | 11-10-2011 |
20120040490 | ENHANCED VISION SYSTEM FOR SCREEN PRINTING PATTERN ALIGNMENT - Embodiments of the invention also generally provide a solar cell formation process that includes the formation of metal contacts over heavly doped regions that are formed in a desired pattern on a surface of a substrate. Embodiments of the invention also provide an inspection system and supporting hardware that is used to reliably position a similarly shaped, or patterned, metal contact structure on the patterned heavily doped regions to allow an Ohmic contact to be made. The metal contact structure, such as fingers and busbars, are formed on the heavily doped regions so that a high quality electrical connection can be formed between these two regions. | 02-16-2012 |
20120088193 | Radiation Patternable CVD Film - Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer. | 04-12-2012 |
20120088369 | Atomic Layer Deposition Of Photoresist Materials And Hard Mask Precursors - Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers. | 04-12-2012 |
20120100666 | PHOTOLUMINESCENCE IMAGE FOR ALIGNMENT OF SELECTIVE-EMITTER DIFFUSIONS - Embodiments of the invention generally provide a solar cell formation process that includes the formation of metal contacts over heavily doped regions that are formed in a desired pattern on a surface of a substrate. Embodiments of the invention also provide an inspection system and supporting hardware that is used to reliably position a similarly shaped, or patterned, metal contact structure on the patterned heavily doped regions to allow an Ohmic contact to be made. The metal contact structure, such as fingers and busbars, are formed on the heavily doped regions so that a high quality electrical connection can be formed between these two regions. | 04-26-2012 |
20120122302 | Apparatus And Methods For Deposition Of Silicon Carbide And Silicon Carbonitride Films - Methods for deposition of silicon carbide films on a substrate surface are provided. The methods include the use of vapor phase carbosilane precursors and may employ plasma enhanced atomic layer deposition processes. The methods may be carried out at temperatures less than 600° C., for example between about 23° C. and about 200° C. or at about 100° C. This silicon carbide layer may then be densified to remove hydrogen content. Additionally, the silicon carbide layer may be exposed to a nitrogen source to provide reactive N—H groups, which can then be used to continue film deposition using other methods. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films. | 05-17-2012 |
20120269967 | Hot Wire Atomic Layer Deposition Apparatus And Methods Of Use - Provided are gas distribution plates for atomic layer deposition apparatus including a hot wire or hot wire unit which can be heated to excite gaseous species while processing a substrate. Methods of processing substrates using a hot wire to excite gaseous precursor species are also described. | 10-25-2012 |
20120315756 | PROCESS FOR ELECTROLESS COPPER DEPOSITION ON A RUTHENIUM SEED - Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide. | 12-13-2012 |
20130065404 | Carbosilane Precursors For Low Temperature Film Deposition - Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN. | 03-14-2013 |
20130071580 | Activated Silicon Precursors For Low Temperature Deposition - Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films. | 03-21-2013 |
20130113085 | Atomic Layer Deposition Of Films Using Precursors Containing Hafnium Or Zirconium - Provided are low temperature methods of depositing hafnium or zirconium containing films using a Hf(BH | 05-09-2013 |
20130115778 | Dry Etch Processes - Provided methods of etching and/or patterning films. Certain methods comprise exposing at least part of a film on a substrate, the film comprising one or more of HfO | 05-09-2013 |
20140023794 | Method And Apparatus For Low Temperature ALD Deposition - Provided are methods and apparatus for low temperature atomic layer deposition of a densified film. A low temperature film is formed and densified by exposure to one or more of a plasma or radical species. The resulting densified film has superior properties to low temperature films formed without densification. | 01-23-2014 |
20140038427 | Carbosilane Precursors For Low Temperature Film Deposition - Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN. | 02-06-2014 |
20140231930 | Atomic Layer Deposition of Hafnium or Zirconium Alloy Films - Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH | 08-21-2014 |
20140268082 | VAPOR DEPOSITION DEPOSITED PHOTORESIST, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR - A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist. | 09-18-2014 |