Patent application number | Description | Published |
20090275149 | METHODS AND SYSTEMS FOR CONTROLLING CRITICAL DIMENSIONS IN TRACK LITHOGRAPHY TOOLS - A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer. The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map. The multi-zone heater includes a plurality of heater zones. The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone. The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer and modifying a temperature of the first heater zone based, in part, on the temperature variation. | 11-05-2009 |
20120088193 | Radiation Patternable CVD Film - Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer. | 04-12-2012 |
20120088369 | Atomic Layer Deposition Of Photoresist Materials And Hard Mask Precursors - Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers. | 04-12-2012 |
20130113085 | Atomic Layer Deposition Of Films Using Precursors Containing Hafnium Or Zirconium - Provided are low temperature methods of depositing hafnium or zirconium containing films using a Hf(BH | 05-09-2013 |
20130115778 | Dry Etch Processes - Provided methods of etching and/or patterning films. Certain methods comprise exposing at least part of a film on a substrate, the film comprising one or more of HfO | 05-09-2013 |
20140231930 | Atomic Layer Deposition of Hafnium or Zirconium Alloy Films - Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH | 08-21-2014 |
20140263172 | RESIST HARDENING AND DEVELOPMENT PROCESSES FOR SEMICONDUCTOR DEVICE MANUFACTURING - In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided. | 09-18-2014 |
20140268080 | PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR - An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer. | 09-18-2014 |
20140268082 | VAPOR DEPOSITION DEPOSITED PHOTORESIST, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR - A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist. | 09-18-2014 |