Patent application number | Description | Published |
20130155759 | Test Structures, Methods of Manufacturing Thereof, Test Methods, and MRAM Arrays - Test structures, methods of manufacturing thereof, test methods, and magnetic random access memory (MRAM) arrays are disclosed. In one embodiment, a test structure is disclosed. The test structure includes an MRAM cell having a magnetic tunnel junction (MTJ) and a transistor coupled to the MTJ. The test structure includes a test node coupled between the MTJ and the transistor, and a contact pad coupled to the test node. | 06-20-2013 |
20130188418 | MAGNETORESISTIVE RANDOM ACCESS MEMORY - A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed above or below the MTJ. The induction line is configured to induce a magnetic field at the MTJ. | 07-25-2013 |
20130200475 | MRAM Device and Fabrication Method Thereof - A magnetoresistive random access memory (MRAM) device and a method of manufacture are provided. The MRAM device comprises a magnetic pinned layer, a compound GMR structure acting as a free layer, and a non-magnetic barrier layer separating the pinned and GMR layers. The barrier layer is provided to reduce the magnetic coupling of the free layer and GMR structure, as well as provide a resistive state (high or low) for retaining binary data (0 or 1) in the device. The GMR structure provides physical electrode connectivity for set/clear memory functionality which is separated from the physical electrode connectivity for the read functionality for the memory device. | 08-08-2013 |
20140252513 | Elongated Magnetoresistive Tunnel Junction Structure - A Magnetoresistive Tunnel Junction (MTJ) device includes an elongated MTJ structure formed onto a substrate, the MTJ structure including a magnetic reference layer and a tunnel barrier layer. The MTJ device also includes a number of discrete free magnetic regions disposed onto the tunnel barrier layer. The ratio of length to width of the elongated MTJ structure is such that the magnetic field of the magnetic reference layer is pinned in a single direction. | 09-11-2014 |
20140264463 | Integration of Magneto-Resistive Random Access Memory and Capacitor - The present disclosure provides one embodiment of a semiconductor structure that includes a first metal layer formed on a semiconductor substrate, wherein the first metal layer includes a first metal feature in a first region and a second metal feature in a second region; a second metal layer disposed on the first metal layer, wherein the second metal layer includes a third metal feature in the first region and a fourth metal feature in a second region; a magneto-resistive memory device sandwiched between the first metal feature and the third metal feature; and a capacitor sandwiched between the second metal feature and the fourth metal feature. | 09-18-2014 |