Patent application number | Description | Published |
20130106391 | Low Voltage, Low Power Bandgap Circuit | 05-02-2013 |
20130107632 | Mixed Voltage Non-volatile Memory Integrated Circuit With Power Saving | 05-02-2013 |
20130148428 | Non-volatile Memory Device And A Method Of Programming Such Device - A non-volatile memory device has a charge pump for providing a programming current and an array of non-volatile memory cells. Each memory cell of the array is programmed by the programming current from the charge pump. The array of non-volatile memory cells is partitioned into a plurality of units, with each unit comprising a plurality of memory cells. An indicator memory cell is associated with each unit of non-volatile memory cells. A programming circuit programs the memory cells of each unit using the programming current, when fifty percent or less of the memory cells of each unit is to be programmed, and programs the inverse of the memory cells of each unit and the indicator memory cell associated with each unit, using the programming current, when more than fifty percent of the memory cells of each unit is to be programmed. | 06-13-2013 |
20140104965 | Non-volatile Memory Array And Method Of Using Same For Fractional Word Programming - A non-volatile memory device that includes N planes of non-volatile memory cells (where N is an integer greater than 1). Each plane of non-volatile memory cells includes a plurality of memory cells configured in rows and columns. Each of the N planes includes gate lines that extend across the rows of the memory cells therein but do not extend to others of the N planes of non-volatile memory cells. A controller is configured to divide each of a plurality of words of data into N fractional-words, and program each of the N fractional-words of each word of data into a different one of the N planes of non-volatile memory cells. The controller uses a programming current and a program time period for the programming, and can be configured to vary the programming current by a factor and inversely vary the program time period by the factor. | 04-17-2014 |
20140269049 | Hybrid Chargepump And Regulation Means And Method For Flash Memory Device - A hybrid charge pump and control circuit for use in a memory device is disclosed. | 09-18-2014 |
20140269061 | High Speed Sensing For Advanced Nanometer Flash Memory Device - Improved sensing circuits and improved bit line layouts for advanced nanometer flash memory devices are disclosed. | 09-18-2014 |
20140269098 | DYNAMIC PROGRAMMING OF ADVANCED NANOMETER FLASH MEMORY - An improved method and apparatus for programming advanced nanometer flash memory cells is disclosed. | 09-18-2014 |
20140282348 | TRANSISTOR DESIGN FOR USE IN ADVANCED NANOMETER FLASH MEMORY DEVICES - Improved PMOS and NMOS transistor designs for sensing circuitry use in advanced nanometer flash memory devices are disclosed. | 09-18-2014 |