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Thore
Pierre Thore, Pau FR
| Patent application number | Description | Published |
|---|---|---|
| 20120226442 | METHOD FOR POSITIONING A WELL RELATIVE TO SEISMIC IMAGE OF THE SUBSOIL - Three seismic waves are emitted from different emission points situated outside the well that is to be positioned relative to a seismic image. The times of arrival of these seismic waves are measured on a detector placed in the well. The propagation of the seismic waves emitted from the respective emission points is simulated using a speed model that has been used to construct the seismic image. The simulation provides the respective wavefronts presented by each of the waves at the end of a time equal to the time of arrival measured on the detector for this wave. The detector can then be positioned in the envelope area of the wavefronts, adjacent to the intersection of the wavefronts estimated in the seismic volume. | 09-06-2012 |
Stéphane Thore, Nyon CH
| Patent application number | Description | Published |
|---|---|---|
| 20110189689 | RIBOSWITCHES - The TPP riboswitch is a target for antibiotics, herbicides, algicides, fungicides and other utilities. The atomic structure of the binding pocket of the TPP riboswitch has been resolved. Compounds identified and optimized using this information can be used to stimulate, activate, inhibit and/or inactivate the TPP riboswitch. | 08-04-2011 |
William A. Thore, Morrisville, NC US
| Patent application number | Description | Published |
|---|---|---|
| 20110266556 | METHOD FOR CONTROLLED GROWTH OF SILICON CARBIDE AND STRUCTURES PRODUCED BY SAME - A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die. | 11-03-2011 |