Patent application number | Description | Published |
20110305619 | Silicon Containing Halogenide, Method for Producing the Same, and Use of the Same - The invention relates to silicon containing halogenide obtained by thermal disintegration of halogenized polysilane, and a method for producing the silicon. The silicon has a halogenide content of 1 at %-50 at %. The invention further relates to the use of the silicon containing halogenide for purifying metallurgical silicon. | 12-15-2011 |
20110305620 | Method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group - The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group. | 12-15-2011 |
20120202054 | BODIES COATED BY SiC AND METHOD FOR CREATING SiC-COATED BODIES - Bodies coated with a SiC layer or with a multilayer coating system that include at least a SiC hard material layer, wherein the SiC layer consists of halogen-containing nanocrystalline 3C-SiC or a mixed layer which consists of halogen-containing nanocrystalline 3C-SiC and amorphous SiC or halogen-containing nanocrystalline 3C-SiC and amorphous carbon. | 08-09-2012 |
20120315392 | METHOD FOR PRODUCING HYDROGENATED POLYGERMASILANE AND HYDROGENATED POLYGERMASILANE - A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane. | 12-13-2012 |
20120321540 | METHOD FOR PRODUCING OLIGOSILANES - A method for producing oligosilanes by reacting halogenated oligosilanes with a metal hydride includes a reaction occurring in the presence of a catalyst and an alkali metal halide, the catalyst including a halide of a multivalent metal; and the reaction occurs in an ethereal solution. | 12-20-2012 |
20130001467 | KINETICALLY STABLE CHLORINATED POLYSILANES AND PRODUCTION AND USE THEREOF - Kinetically stable halogenated polysilanes include mixture of compounds having respectively at least four silicon atoms bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) the kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative-splitting by chlorine, and the degree of conversion at temperatures of 120° C. within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) the kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol %. | 01-03-2013 |
20130004666 | METHOD FOR PRODUCING HYDROGENATED POLYGERMANE AND HYDROGENATED POLYGERMANE - A process for preparing hydrogenated polygermane as a pure compound or mixture of compounds, including hydrogenating halogenated polygermane. | 01-03-2013 |
20130017138 | METHOD FOR PRODUCING HEXACHLORODISILANEAANM Auner; NorbertAACI GlashuettenAACO DEAAGP Auner; Norbert Glashuetten DEAANM Bauch; ChristianAACI MuldensteinAACO DEAAGP Bauch; Christian Muldenstein DEAANM Holl; SvenAACI GueckingenAACO DEAAGP Holl; Sven Gueckingen DEAANM Deltschew; RumenAACI LeipzigAACO DEAAGP Deltschew; Rumen Leipzig DEAANM Mohsseni; JavadAACI Bitterfeld-WolfenAACO DEAAGP Mohsseni; Javad Bitterfeld-Wolfen DEAANM Lippold; GerdAACI LeipzigAACO DEAAGP Lippold; Gerd Leipzig DEAANM Gebel; ThoralfAACI DresdenAACO DEAAGP Gebel; Thoralf Dresden DE - A method produces hexachlorodisilane. Hexachlorodisilane is obtained by oxidative splitting of the chlorinated polysilane of the empirical formula SiClx (x=0,2-0,8) using chlorine gas. The hexachlorodisilane is selectively obtained with a high yield. | 01-17-2013 |
20130039830 | METHOD FOR REMOVING IMPURITIES FROM SILICON - A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiX | 02-14-2013 |
20130043429 | CHLORINATED OLIGOGERMANES AND METHOD FOR THE PRODUCTION THEREOF - A chlorinated oligogermane as a pure compound or mixture of compounds which each have at least one direct Ge—Ge bond, substituents of which include chlorine or chlorine and hydrogen and atom ratio for substituent:germanium is at least 2:1 in the composition thereof, wherein a) the mixture has on average a Ge:Cl ratio of 1:1 to 1:3, or the pure compound has a Ge:Cl ratio of 1:2 to 1:2.67, and b) the mixture has an average number of germanium atoms of 2 to 8. | 02-21-2013 |
20130171052 | Process for Removing Nonmetallic Impurities from Metallurgical Silicon - The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner. | 07-04-2013 |