Patent application number | Description | Published |
20090206440 | Power Semiconductor Device - A semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region. | 08-20-2009 |
20090289690 | SEMICONDUCTOR DEVICE WITH SWITCH ELECTRODE AND GATE ELECTRODE AND METHOD FOR SWITCHING A SEMICONDUCTOR DEVICE - A semiconductor device with switch electrode and gate electrode and a method for switching a semiconductor device. One embodiment provides a semiconductor substrate with an emitter region, a drift region, a body region and a source region. The drift region is formed between the emitter and the body region while the body region is formed between the drift and the source region. A first trench structure extends from the source region at least partially into the drift region. The first trench structure includes a gate electrode arranged next to the body region and a switch electrode arranged in portions next to the drift region, wherein the switch and gate electrodes are electrically insulated from each other in the trench structure. A first gate driver is electrically connected to the gate electrode while a second gate driver is electrically connected to the switch gate. | 11-26-2009 |
20110018029 | SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE - A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region. | 01-27-2011 |
20110309423 | SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD FOR MANUFACTURING - A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension. | 12-22-2011 |
20130001640 | SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE - A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region. | 01-03-2013 |
20130193510 | SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD FOR MANUFACTURING - A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension. | 08-01-2013 |
20130270632 | SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE - A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region. | 10-17-2013 |
20160111508 | SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD FOR MANUFACTURING - A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension. | 04-21-2016 |