Patent application number | Description | Published |
20080273394 | SYMMETRIC DIFFERENTIAL CURRENT SENSE AMPLIFIER - A reference current integrator and a sensed current integrator are coupled to form a differential sense amplifier. The differential sense amplifier is coupled to receive a bitline current signal from a flash memory, and the reference current integrator is coupled to receive a current signal from a reference memory cell. The differential current integrating sense amplifier is also used for instrumentation, communication, data storage, sensing, biomedical device, and analog to digital conversion. | 11-06-2008 |
20090059672 | SELF-TIMED INTEGRATING DIFFERENTIAL CURRENT SENSE AMPLIFIER - A reference current integrator and a sensed current integrator are coupled to form a differential sense amplifier. The differential sense amplifier is coupled to receive a bitline current signal from a flash memory, and the reference current integrator is coupled to receive a current signal from a reference memory cell. Integration continues until a desired voltage or time is reached, resulting in a sufficiently reliable output. The differential current integrating sense amplifier is also used for instrumentation, communication, data storage, sensing, biomedical device, and analog to digital conversion. | 03-05-2009 |
20150194192 | SENSE AMPLIFIER OF A MEMORY CELL - A sense amplifier of a memory cell having a sense voltage generating circuit configured to generate a sense voltage; and a sensing circuit configured to compare a bitline voltage of the memory cell with the sense voltage, and to output a digital output signal indicating a content of the memory cell, wherein during a sense phase, the sensing circuit is decoupled from a voltage supply which charges a bitline capacitance during a precharge phase, and is coupled to and supplied by the bitline capacitance. The sense voltage generating circuit may be further configured to generate a sense voltage that during a precharge phase is dependent on the voltage supply and during a sense phase is independent of the voltage supply. | 07-09-2015 |
20150294700 | MEMORY TIMING CIRCUIT - A memory circuit including a memory cell configured to provide a charge, voltage, or current to an associated bit-line; a sense amplifier configured to sense the charge, voltage, or current on the bit-line; a word-line circuit configured to control a word-line of the memory cell; and a tracking circuit configured to track one or more conditions of the memory circuit and provide a timing control signal at an output operative to adaptively control the word-line circuit. | 10-15-2015 |
Patent application number | Description | Published |
20110138249 | Apparatus and Method for Detecting an Error Within a Plurality of Coded Binary Words Coded by an Error Correction Code - An apparatus for detecting an error within a plurality of coded binary words coded by an error correction code includes a combiner connected town error detector. The combiner generates a combined binary word by combining a first coded binary word and a second coded binary word of the plurality of coded binary words, so that the determined combined binary word is a code word of the error correction code if the first coded binary word and the second coded binary word are code words of the error correction code, and so that the combined binary word is not a code word of the error correction code if the first coded binary word or the second coded binary word is not a code word of the error correction code. Further, the error detector may determine an error detection bit sequence indicating whether or not the combined binary word is a code word of the error correction code. | 06-09-2011 |
20110191658 | Method and Apparatus for Storing Data - When coding user data, it may be desirable to mark user data as invalid. This may arise, by way of example, in applications in which a stored data item needs to be updated by virtue of an updated data item additionally being stored and the old stored data item being marked as invalid. In order to mark the invalidity of a stored data item by means of the value of the data item and to be able to apply an error-recognizing or error-correcting coding dependably, the user data are extended by supplementary data and the coding is applied to the extended user data. | 08-04-2011 |
20120069673 | METHOD AND DEVICE FOR PROGRAMMING DATA INTO NON-VOLATILE MEMORIES - A device includes a non-volatile memory and a control unit, wherein the control unit is configured to change over programming of data of the non-volatile memory from a first programming mode to a second, different programming mode based on the occurrence of a control signal. | 03-22-2012 |
20120117448 | Apparatus and Method for Correcting at least one Bit Error within a Coded Bit Sequence - An apparatus for correcting at least one bit error within a coded bit sequence includes an error syndrome generator and a bit error corrector. The error syndrome generator determines the error syndrome of a coded bit sequence derived by a multiplication of a check matrix with a coded bit sequence. | 05-10-2012 |
20120126783 | SELF TIMED CURRENT INTEGRATING SCHEME EMPLOYING LEVEL AND SLOPE DETECTION - Some embodiments of the invention relate to a sense amplifier configured to determine the slope of a bitline charging voltage and to utilize the determined slope in combination with a voltage level sensing scheme to aid in reading data from a memory cell associated with the bitline. In particular, a sense amplifier circuit is configured to determine a slope of a bit line charging voltage and based upon the determined slope to adjust the slope of the bitline voltage (e.g., by adding a dynamic slope dependent current to a memory cell current configured to charge the bitline) provided to a sense amplifier. By adjusting the slope of the bitline voltage, the charging speed of memory cells in a low resistive state (e.g., having a high cell current and therefore a good SNR) can be increased. | 05-24-2012 |
20120133424 | CHARGE PUMPS WITH IMPROVED LATCHUP CHARACTERISTICS - Some embodiments of the present disclosure relate to improved regulators for charge pumps. Such regulators selectively activate a charge pump based not only on the voltage output of the charge pump, but also on an series of wake-up pulses that are delivered at predetermined time intervals and which are delivered independently of the voltage output of the charge pump. Hence, these wake-up pulses prevent extended periods of time in which the charge pump is inactive, thereby helping to prevent latch-up in some situations. | 05-31-2012 |
20120144260 | Apparatus and Method for Detecting an Error Within a Coded Binary Word - An apparatus for detecting an error within a coded binary word includes an error corrector and an error detector. The error corrector corrects a correctable bit error within a faulty subset of bits of a faulty coded binary word coded by an error correction code, so that the corrected subset of bits is equal to a corresponding subset of bits of a code word of the error correction code, if the error corrector works faultlessly. Further, the error detector determines an error detection bit sequence indicating whether or not an error detector input binary word is a code word of the error correction code. The error detector input binary word is based on a corrected coded binary word containing the corrected subset of bits and maximally a proper subset of bits of the faulty coded binary word. | 06-07-2012 |
20130212452 | Apparatus and Method for Comparing Pairs of Binary Words - An apparatus for comparing pairs of binary words includes an intermediate value determiner and an error detector. The intermediate value determiner determines an intermediate binary word so that the intermediate binary word is equal to a reference binary word for a first pair of equal or inverted binary words, so that the intermediate binary word is equal to the inverted reference binary word for a second pair of equal or inverted binary words and so that the intermediate binary word is unequal to the reference binary word and the inverted reference binary word for a pair of unequal and uninverted binary words, if the intermediate value determiner works faultlessly. Further, the error detector provides an error signal based on the intermediate binary word so that the error signal indicates whether or not the binary words of a pair of binary words are equal or inverted. | 08-15-2013 |
20130321045 | CHARGE PUMPS WITH IMPROVED LATCHUP CHARACTERISTICS - Some embodiments of the present disclosure relate to improved regulators for charge pumps. Such regulators selectively activate a charge pump based not only on the voltage output of the charge pump, but also on an series of wake-up pulses that are delivered at predetermined time intervals and which are delivered independently of the voltage output of the charge pump. Hence, these wake-up pulses prevent extended periods of time in which the charge pump is inactive, thereby helping to prevent latch-up in some situations. | 12-05-2013 |
20130346834 | APPARATUS AND METHOD FOR CORRECTING AT LEAST ONE BIT ERROR WITHIN A CODED BIT SEQUENCE - An apparatus for correcting at least one bit error within a coded bit sequence includes an error syndrome generator and a bit error corrector. The error syndrome generator determines the error syndrome of a coded bit sequence derived by a multiplication of a check matrix with a coded bit sequence. | 12-26-2013 |
20140052896 | SYSTEM AND METHOD FOR EMULATING AN EEPROM IN A NON-VOLATILE MEMORY DEVICE - The invention relates to an electronic memory system, and more specifically, to a system for emulating an electrically erasable programmable read only memory in a non-volatile memory device, and a method of emulating an electrically erasable programmable read only memory in a non-volatile memory device. According to an embodiment, a system for emulating an electrically erasable programmable read only memory is provided, the system including a Flash memory, wherein the Flash memory is configurable into a first region and a second region, wherein the first region is adapted to store a first class of data and the second region is adapted to store a second, different class of data. | 02-20-2014 |
20140056058 | Differential Sensing Method and System for STT MRAM - The invention relates to methods and systems for reading a memory cell and in particular, an STT MRAM. In accordance with one aspect of the invention, a system for reading a memory cell includes a read path and a precharge path. The reference current is provided through the read path and is sampled via a sampling element in the read path. Subsequently, a current from the memory cell is provided through the same sampling element and read path. The output level is then determined by the cell current working against the sampled reference current. | 02-27-2014 |
20140063923 | Mismatch Error Reduction Method and System for STT MRAM - The invention relates to methods and systems for reading a memory cell and in particular, an STT MRAM. In accordance with one aspect of the invention, a method for reading a memory cell includes combining a cell current from a memory cell with a reference current from a reference source to create an average current, enabling the average current to flow through a first mirror transistor in a sense path and a second mirror transistor in a reference path, storing the current mismatch on a capacitor coupled to the gates of the first mirror transistor and the second mirror transistor, disconnecting the memory cell from the reference path and disconnecting the reference source from the sense path, enabling the cell current only to flow through the sense path, and determining the output level of the memory cell. | 03-06-2014 |
20140064011 | System and Method for Providing Voltage Supply Protection in a Memory Device - The invention relates to an electronic memory system, and more specifically, to a system for providing voltage supply protection in a memory device, and a method for providing voltage supply protection in a memory device. According to an embodiment, a system for providing voltage supply protection in a memory device is provided, the system including a memory array including a plurality of memory cells arranged in a plurality of groups of memory cells, and a plurality of current limiting elements, wherein each group of memory cells is associated with at least one current limiting element. | 03-06-2014 |
20140075272 | DEVICE AND METHOD FOR TESTING A CIRCUIT TO BE TESTED - A device for testing a circuit includes a syndrome determiner, a test sequence provider and an evaluation circuit. The syndrome determiner determines an error syndrome bit sequence (s(v′)) based on a coded binary word (v′). The error syndrome bit sequence (s(v′)) indicates whether the coded binary word (v′) is a code word of an error correction code (C) used for coding the coded binary word (v′). The test sequence provider provides a test bit sequence (T | 03-13-2014 |
20140122967 | Circuitry and Method for Multi-Bit Correction - A circuitry is provided that includes a memory including a plurality of memory cells, wherein at least one of the plurality of memory cells of the memory is configured to take on one of at least three different states. The circuitry also includes a first subcircuit BT configured to generate a plurality of ternary output values based on a sequence of binary values, a second subcircuit LH configured to transform one or more ternary state values into binary auxiliary read values based on the one or more state values, and an encoder configured to generate one or more binary check bits, wherein the encoder is configured to store each of the generated one or more check bits in a different memory cell. | 05-01-2014 |
20140173386 | Circuitry and Method for Correcting 3-bit Errors Containing Adjacent 2-Bit Error - A circuitry is proposed for the correction of errors in a possibly erroneous binary word v′=v′ | 06-19-2014 |
20140198583 | Method and System for Reducing the Size of Nonvolatile Memories - Embodiments relate to system and methods including a plurality of nonvolatile memory elements wherein sets of least two nonvolatile memory elements each share one select element for selecting one of the nonvolatile memory elements of a particular one of the sets of nonvolatile memory elements for a read operation or a program operation. | 07-17-2014 |
20140241055 | Method and System for Reducing the Complexity of Electronically Programmable Nonvolatile Memory - Embodiments relate to memory devices and methods for firmly programming at least a portion of a plurality of electronically programmable and erasable nonvolatile memory cells in a processing of the nonvolatile memory devices. | 08-28-2014 |
20150039805 | System and Method to Emulate an Electrically Erasable Programmable Read-Only Memory - The disclosure relates to an electronic memory system, and more specifically, to a system to emulate an electrically erasable programmable read-only memory, and a method to emulate an electrically erasable programmable read-only memory. According to an embodiment of the disclosure, a system to emulate an electrically erasable programmable read-only memory is provided, the system including a first memory section and a second memory section, wherein the first memory section comprises a plurality of storage locations configured to store data partitioned into a plurality of data segments and wherein the second memory section is configured to store information mapping a physical address of a data segment stored in the first memory section to a logical address of the data segment. | 02-05-2015 |
20150039976 | Efficient Error Correction of Multi-Bit Errors - A circuitry for error correction includes a plurality of subcircuits for determining intermediate values Zw | 02-05-2015 |
20150052387 | SYSTEMS AND METHODS UTILIZING A FLEXIBLE READ REFERENCE FOR A DYNAMIC READ WINDOW - A memory system having a flexible read reference is disclosed. The system includes a memory partition, a failcount component, and a controller. The memory partition includes a plurality of memory cells. The failcount component is configured to generate failcounts in response to read operations of the memory partition. The controller is configured to calibrate a reference value for the memory partition by utilizing the failcounts. | 02-19-2015 |
20150155777 | Charge Pumps with Improved Latchup Characteristics - Some embodiments of the present disclosure relate to improved regulators for charge pumps. Such regulators selectively activate a charge pump based not only on the voltage output of the charge pump, but also on an series of wake-up pulses that are delivered at predetermined time intervals and which are delivered independently of the voltage output of the charge pump. Hence, these wake-up pulses prevent extended periods of time in which the charge pump is inactive, thereby helping to prevent latch-up in some situations. | 06-04-2015 |
20150179270 | Method and System for Reducing the Size of Nonvolatile Memories - Embodiments relate to system and methods including a plurality of nonvolatile memory elements wherein sets of least two nonvolatile memory elements each share one select element for selecting one of the nonvolatile memory elements of a particular one of the sets of nonvolatile memory elements for a read operation or a program operation. | 06-25-2015 |
20150212877 | APPARATUS AND METHOD FOR IMPROVING DATA STORAGE BY DATA INVERSION - An apparatus includes a processing unit and a memory. The processing unit is configured to encode a plurality of bits to obtain a plurality of encoded bits, the processing unit is configured to determine an inversion decision. When the inversion decision indicates that the subset of the encoded bits shall not be inverted, the processing unit is configured to store, as a stored word, bits of the first codeword into the memory. When the inversion decision indicates that the subset of the encoded bits shall be inverted, the processing unit is configured to invert each encoded bit of a subset of the encoded bits to obtain a second codeword and to store the second codeword into the memory. | 07-30-2015 |