Patent application number | Description | Published |
20110316094 | SEMICONDUCTOR DEVICES WITH ASYMMETRIC HALO IMPLANTATION AND METHOD OF MANUFACTURE - a method comprises forming a hardmask over one or more gate structures. The method further comprises forming a photoresist over the hardmask. The method further comprises forming an opening in the photoresist over at least one of the gate structures. The method further comprises stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further comprises removing the photoresist. The method further comprises providing a halo implant on a side of the least one of the at least one of the gate structures. | 12-29-2011 |
20120064714 | CONTACT FORMATION METHOD INCORPORATING A PREVENTATIVE ETCH STEP FOR REDUCING INTERLAYER DIELECTRIC MATERIAL FLAKE DEFECTS - Disclosed are embodiments of a contact formation technique that incorporates a preventative etch step to reduce interlayer dielectric material flaking (e.g., borophosphosilicate glass (BPSG) flaking) and, thereby to reduce surface defects. Specifically, contact openings, which extend through a dielectric layer to semiconductor devices in and/or on a center portion of a substrate, can be filled with a conductor layer deposited by chemical vapor deposition (CVD). Chemical mechanical polishing (CMP) of the conductor layer can be performed to complete the contact structures. However, before the CMP process is performed (e.g., either before the contact openings are ever formed or before the contact openings are filled), a preventative etch process can be performed to remove any dielectric material from above the edge portion of the substrate. Removing the dielectric material from above the edge portion of the substrate prior to CMP reduces the occurrence of surface defects caused by dielectric material flaking. | 03-15-2012 |
20130113577 | TUNABLE FILTER STRUCTURES AND DESIGN STRUCTURES - Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter. | 05-09-2013 |
20130146846 | GRAPHENE FIELD EFFECT TRANSISTOR - Manufacturing a semiconductor structure including: forming a seed material on a sidewall of a mandrel; forming a graphene field effect transistor (FET) on the seed material; and removing the seed material. | 06-13-2013 |
20130146847 | GRAPHENE FIELD EFFECT TRANSISTOR - Manufacturing a semiconductor structure including: forming a seed material on an insulator layer; forming a graphene field effect transistor (FET) on the seed material; and forming an air gap under the graphene FET by removing the seed material. | 06-13-2013 |
20130147319 | LOADING ELEMENT OF A FILM BULK ACOUSTIC RESONATOR - Manufacturing a semiconductor structure including modifying a frequency of a Film Bulk Acoustic Resonator (FBAR) device though a vent hole of a sealing layer surrounding the FBAR device. | 06-13-2013 |
20130169383 | SWITCHABLE FILTERS AND DESIGN STRUCTURES - Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes. | 07-04-2013 |
20130187246 | BACKSIDE INTEGRATION OF RF FILTERS FOR RF FRONT END MODULES AND DESIGN STRUCTURE - A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device. | 07-25-2013 |
20130187729 | SWITCHABLE FILTERS AND DESIGN STRUCTURES - Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a fixed electrode with a plurality of fingers on the piezoelectric substrate. The method further includes forming a moveable electrode with a plurality of fingers over the piezoelectric substrate. The method further includes forming actuators aligned with one or more of the plurality of fingers of the moveable electrode. | 07-25-2013 |
20130214877 | SWITCHABLE FILTERS AND DESIGN STRUCTURES - Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes. | 08-22-2013 |
20140131661 | GRAPHENE FIELD EFFECT TRANSISTOR - Manufacturing a semiconductor structure including: forming a seed material on a sidewall of a mandrel; forming a graphene field effect transistor (FET) on the seed material; and removing the seed material. | 05-15-2014 |
20150042418 | SWITCHABLE FILTERS AND DESIGN STRUCTURES - Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes. | 02-12-2015 |
20150054094 | SEMICONDUCTOR DEVICES WITH ASYMMETRIC HALO IMPLANTATION AND METHOD OF MANUFACTURE - A method includes forming a hardmask over one or more gate structures. The method further includes forming a photoresist over the hardmask. The method further includes forming an opening in the photoresist over at least one of the gate structures. The method further includes stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further includes removing the photoresist. The method further includes providing a halo implant on a side of the least one of the at least one of the gate structures. | 02-26-2015 |