| Patent application number | Description | Published |
|---|
| 20080197433 | MEMORY DEVICE AND MEMORY - Disclosed is a memory device including a memory layer retaining information thereon based on a magnetization state of a magnetic body, a fixed-magnetization layer having a fixed-magnetization direction formed on the memory layer through a non-magnetic layer, and two metal wiring lines formed adjacent to both ends of the fixed-magnetization layer, in the memory, the magnetization direction of the memory layer is changed by passing an electric current therethrough in a stacked direction to record the information on the memory layer. | 08-21-2008 |
| 20080197434 | MAGNETIC MEMORY DEVICE - A magnetic memory device in which an MRAM element is magnetically shielded from large external magnetic fields. The magnetic memory device includes:
| 08-21-2008 |
| 20080225581 | MEMORY DEVICE AND MEMORY - A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer. | 09-18-2008 |
| 20090044014 | NETWORK CONSTRUCTING METHOD AND COMMUNICATION APPARATUS - In a wireless network communication device, multiple items of network identification information, which are for identifying wireless network systems, are read out of a memory and displayed on a display unit. Network identification information of a wireless network system, which is capable of being constructed anew, is selected from the multiple items of network identification information displayed and a wireless network system corresponding to the network identification information selected is constructed. | 02-12-2009 |
| 20090218670 | STORAGE MEDIUM AND SEMICONDUCTOR PACKAGE - A semiconductor package includes a semiconductor chip formed with a non-volatile semiconductor memory, a resin encapsulation that encapsulates the semiconductor chip, electrodes in a lattice (solder balls) formed and arrayed in a lattice on a bottom surface of the resin encapsulation. The solder balls include a signal electrode formed within the central region of the array and a dummy electrode formed outside the signal electrode. | 09-03-2009 |
| 20090285017 | MEMORY DEVICE AND MEMORY - A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer. | 11-19-2009 |
| 20100093682 | LIPID COMPOSITION HAVING EXCELLENT SHAPE RETENTION PROPERTY AND PRODUCT - It is to provide a technique for preventing aggregation or caking of menthol at the time of its keeping. In addition, it is to provide a lipid composition, which can show excellent thermal stability even in the case of high temperature at the time of keeping menthol and at the time of blending in a product, does not cause mutual aggregation of powders, particles, flakes, pellets, sticks and the like of menthol, and can maintain its shape retention property. From 10 to 50% by mass of sterols are added to and mixed with from 50 to 90% by mass of menthol, and the resultant is melted with heating. Paraffins may be further added and mixed in an amount of 20% by mass or less, based on the lipid composition. | 04-15-2010 |
| 20100135068 | RESISTANCE-CHANGE MEMORY DEVICE - A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon. | 06-03-2010 |
| 20100135069 | RESISTANCE VARIABLE MEMORY DEVICE - A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a plurality of write pulses and an offset pulse defining the level between the write pulses and supplies the combined pulse to the memory cell at the time of the writing. | 06-03-2010 |
| 20100200939 | STORAGE ELEMENT AND MEMORY - A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer is provided on the storage layer with an intermediate layer | 08-12-2010 |
| 20100314673 | MEMORY DEVICE AND MEMORY - A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer. | 12-16-2010 |
| 20100328992 | MEMORY - A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not. | 12-30-2010 |
| 20100328993 | RECORDING METHOD OF NONVOLATILE MEMORY AND NONVOLATILE MEMORY - A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device. | 12-30-2010 |
| 20100328998 | MEMORY AND WRITE CONTROL METHOD - A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more. | 12-30-2010 |
| 20110026322 | RECORDING METHOD FOR MAGNETIC MEMORY DEVICE - [Object] To provide a recording method for a magnetic memory device including a recording layer that is capable of changing a magnetization direction and holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween and becomes a reference of the magnetization direction, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, a write error rate of 10 | 02-03-2011 |
| 20110032744 | RECORDING METHOD FOR MAGNETIC MEMORY DEVICE - [Object] To provide a recording method for a magnetic memory device including a recording layer that holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, the same level of error rate as in a case where a write pulse a little higher than the inversion threshold value is applied. | 02-10-2011 |
| 20110077309 | HUMECTANT COMPOSITION - The present invention relates to a humectant composition containing, as component (A), at least one member selected from a menthol derivative represented by the following formula (1) and p-menthane-3,8-diol: | 03-31-2011 |
| 20110081692 | POLYHYDROXYALKANOIC ACID COPOLYMER AND PROCESS FOR PREPARING SAME - A PHA copolymer comprising (R)-3-hydroxy-4-methyl valeric acid units and a production method thereof are provided. | 04-07-2011 |
