Patent application number | Description | Published |
20080286883 | Dry etching method and production method of magnetic memory device - Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction. | 11-20-2008 |
20090162950 | DRY ETCHING EQUIPMENT AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A dry etching equipment includes a topography simulator and a control section. The topography simulator controls an amount of deposition species incident upon a sidewall to be processed in accordance with a wafer opening ratio and a solid angle of a local pattern, the deposition amount being represented by a product of a reaction product flux and the solid angle. The control section compares a database obtained by the topography simulator with an actual measured value detected from an etching condition during dry etching to calculate a correction value for etching process, and indicates the correction value to an etching chamber in the dry etching equipment. The dry etching equipment corrects in real time a parameter for the etching process conducted in the etching chamber. | 06-25-2009 |
20100244169 | SOLID-STATE IMAGING DEVICE, FABRICATION METHOD THEREOF, IMAGING APPARATUS, AND FABRICATION METHOD OF ANTI-REFLECTION STRUCTURE - A fabrication method of an anti-reflection structure includes the steps of: forming a resin film having micro-particles dispersed therein on a surface of a substrate; forming a protrusion dummy pattern on the resin film by etching the resin film using the micro-particles in the resin film as a mask while gradually etching the micro-particles; and forming a protrusion pattern on the surface of the substrate by etching back the surface of the substrate together with the resin film having the protrusion dummy pattern formed thereon, and transferring a surface shape of the protrusion dummy pattern formed on a surface of the resin film to the surface of the substrate. | 09-30-2010 |
20110082577 | SHAPE SIMULATION APPARATUS, SHAPE SIMULATION PROGRAM, SEMICONDUCTOR PRODUCTION APPARATUS, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD - Disclosed herein is a shape simulation apparatus including: a flux computation block configured to compute the flux of particles incident on the surface of a wafer covered with a mask; and a shape computation block configured to compute a surface shape of the wafer by allowing the coordinates of a plurality of calculation points established on the surface of the wafer to be time-evolved based on the incident flux computed. | 04-07-2011 |
20110160889 | SEMICONDUCTOR MANUFACTURING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SIMULATION DEVICE, AND SIMULATION PROGRAM - Disclosed herein is a semiconductor manufacturing device including, a chamber, a sensor, a sticking probability calculating section, an acting section, and a control section. | 06-30-2011 |
20120158379 | SIMULATOR, PROCESSING SYSTEM, DAMAGE EVALUATION METHOD AND DAMAGE EVALUATION PROGRAM - Disclosed herein is a simulator including: an input section adapted to acquire processing conditions for a given process performed on a workpiece; and a damage calculation section adapted to acquire the damage of the workpiece, based on the processing conditions, by calculating, using a Flux method, the relationship between the amount of a first substance externally injected onto a given evaluation point on the workpiece during the given process and the amount of a second substance released from the given evaluation point on the workpiece as a result of the injection of the first substance. | 06-21-2012 |
20130133832 | SIMULATION METHOD, SIMULATION PROGRAM, AND SEMICONDUCTOR MANUFACTURING APPARATUS - The simulation method is for predicting a damage amount due to ultraviolet rays in manufacturing a semiconductor device. The method includes: calculating particle density by performing simulation based on a differential equation for the particle density; calculating emission intensity at each wavelength in a visible wavelength region based on the calculated particle density; obtaining an electron energy distribution function by comparing the calculated emission intensity at each wavelength in the visible wavelength region with an actually detected emission spectrum in the visible wavelength region with reference to information on emission species and an emission wavelength in a target manufacturing process; predicting an emission spectrum in an ultraviolet wavelength region by using the electron energy distribution function and a reaction cross-sectional area relating to the emission species; and predicting a damage amount due to the ultraviolet rays based on the predicted emission spectrum in the ultraviolet wavelength region. | 05-30-2013 |
20130337584 | SHAPE SIMULATION APPARATUS, SHAPE SIMULATION PROGRAM, SEMICONDUCTOR PRODUCTION APPARATUS, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD - Disclosed herein is a shape simulation apparatus including: a flux computation block configured to compute the flux of particles incident on the surface of a wafer covered with a mask; and a shape computation block configured to compute a surface shape of the wafer by allowing the coordinates of a plurality of calculation points established on the surface of the wafer to be time-evolved based on the incident flux computed. | 12-19-2013 |